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APT29F80J 800V, 29A, 0.21 Max, trr 370ns N-Channel FREDFET POWER MOS 8(R) is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent niose immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. S G D S SO 2 T- 27 "UL Recognized" ISOTOP (R) file # E145592 APT29F80J G D Single die FREDFET S FEATURES * Fast switching with low EMI * Low trr for high reliability * Ultra low Crss for improved noise immunity * Low gate charge * Avalanche energy rated * RoHS compliant TYPICAL APPLICATIONS * ZVS phase shifted and other full full bridge * Half bridge * PFC and other boost converter * Buck converter * Single and two switch forward * Flyback Absolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive 1 Ratings 31 19 173 30 1979 24 Unit A V mJ A Thermal and Mechanical Characteristics Symbol PD RJC RCS TJ,TSTG VIsolation WT Characteristic Total Power Dissipation @ TC = 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range RMS Voltage (50-60hHz Sinusoidal Wavefomr from Terminals to Mounting Base for 1 Min.) Min Typ Max 543 0.23 Unit W C/W C V Rev B 5-2009 050-8171 0.15 -55 2500 1.03 29.2 10 1.1 150 oz g in*lbf N*m Package Weight Torque Terminals and Mounting Screws. Microsemi Website - http://www.microsemi.com Static Characteristics Symbol VBR(DSS) VBR(DSS)/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS TJ = 25C unless otherwise specified Test Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 250A VGS = 10V, ID = 24A VGS = VDS, ID = 2.5mA VDS = 800V VGS = 0V TJ = 25C TJ = 125C APT29F80J Typ 1.41 0.19 4 -10 Max Unit V V/C V mV/C A nA Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Min 800 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current 2.5 0.21 5 250 1000 100 VGS = 30V Dynamic Characteristics Symbol gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf 4 TJ = 25C unless otherwise specified Test Conditions VDS = 50V, ID = 24A VGS = 0V, VDS = 25V f = 1MHz Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related Min Typ 43 9326 159 927 438 Max Unit S pF VGS = 0V, VDS = 0V to 533V 5 Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time VGS = 0 to 10V, ID = 24A, VDS = 400V Resistive Switching VDD = 533V, ID = 24A RG = 2.2 6 , VGG = 15V 217 303 51 155 53 76 231 67 nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD trr Qrr Irrm dv/dt Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) Min D Typ Max 31 Unit G S A 173 1.0 370 710 1.91 5.18 12 18 25 V ns C A V/ns ISD = 24A, TJ = 25C, VGS = 0V TJ = 25C TJ = 125C ISD = 24A 3 diSD/dt = 100A/s TJ = 25C TJ = 125C TJ = 25C TJ = 125C ISD 24A, di/dt 1000A/s, VDD = 100V, TJ = 125C 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25C, L = 6.9mH, RG = 25, IAS = 24A. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -8.27E-7/VDS^2 + 1.01E-7/VDS + 1.43E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. 5-2009 050-8171 Rev B Typical Performance Curves 100 90 80 ID, DRAIN CURRENT (A) 70 60 50 40 30 20 10 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 1, Output Characteristics 0 TJ= 150C TJ= 125C ID, DRAIN CURRENT (A) TJ= 25C V GE APT29F80J 60 TJ= 55C 50 40 30 20 10 5V T = 125C J = 10V 10 & 15V 6 & 6.5V 5.5V 4.5V 4V 0 5 10 15 20 25 30 35 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 2, Output Characteristics VDS> ID(ON) x RDS(ON) MAX. RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 NORMALIZED TO VGS = 10V @ 24A 160 140 120 100 80 60 40 TJ= 125C 20 TJ= 25C 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE ID, DRAIN CURRENT (A) TJ= 55C 60 g fs, TRANSCONDUCTANCE 50 40 30 20 10 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 3, RDS(ON) vs Junction Temperature TJ = -55C 0 0 0 10,000 2 4 6 8 VGS , GATE-TO-SOURCE VOLTAGE (V) FIGURE 4, Transfer Characteristics Ciss 10 C, CAPACITANCE (pF) TJ = 25C TJ = 125C 1,000 Coss 100 Crss 0 5 10 15 20 25 30 35 10 0 200 400 600 80 ID, DRAIN CURRENT (A) FIGURE 5, Gain vs Drain Current VGS, GATE-TOSOURCE VOLTAGE (V) 12 ID = 31A VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 6, CAPACITANCE VS DRAIN-TO-SOURCE VOLTAGE 200 10 8 6 4 2 0 VDS = 120V VDS = 300V ISD, REVERSE DRAIN CURRENT (A) 160 120 VDS = 480V TJ = 25C 40 TJ = 150C 0.4 0.8 1.2 1.6 VSD, SOURCE-TO-DRAIN VOLTAGE (V) FIGURE 8, Reverse Drain Current vs Source-to-Drain Voltage 0 050-8171 100 200 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 7, Gate Charge vs Gate-to-Source Voltage 0 0 Rev B 5-2009 80 1000 1000 APT29F80J ID, DRAIN CURRENT (A) IDM 13s ID, DRAIN CURRENT (A) 100 100 IDM 13s 100s Rds(on) 1ms 10ms 10 100s 1ms Rds(on) 10ms 100ms TJ = 125C TC = 75C DC line 10 TJ = 150C TC = 25C 1 1 100ms DC line Scaling for Different Case & Junction Temperatures: ID = ID(T = 25C)*(TJ - TC)/125 C 0.1 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area 0.1 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 0.25 ZJC, THERMAL IMPEDANCE (C/W) D = 0.9 0.20 0.7 0.15 0.5 PDM Note: 0.10 0.3 0.05 0.1 0.05 0 10 -5 t1 t2 t1 = Pulse Duration SINGLE PULSE 10 -4 Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t 10 -3 10 -2 10 -1 1.0 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source Drain * Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal. 5-2009 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) Rev B * Source Dimensions in Millimeters and (Inches) Gate 050-8171 Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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