 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NJG1129MD7 UHF BAND LOW NOISE AMPLIFIER GaAs MMIC ! GENERAL DESCRIPTION The NJG1129MD7 is a low noise amplifier GaAs MMIC designed for mobile digital TV application (470~770 MHz). This IC has a LNA pass-through function to select high gain mode or low gain mode by single bit control. Also, the ESD protection circuit is integrated into the IC to achieve high ESD tolerance. ! PACKAGE OUTLINE NJG1129MD7 ! FEATURES " Low voltage operation " Low voltage control " Package [High gain mode] " Low current consumption " High gain " Low noise figure " High input IP3 [Low gain mode] " Low current consumption " Gain " High input IP3 ! PIN CONFIGURATION (Top View) 11 12 LNA circuit +2.8V typ. +1.85V typ. EQFN14-D7 (Package size: 1.6mm x 1.6mm x 0.397mm typ.) 5.0mA typ. 15.0dB typ. 1.4dB typ. +1.0dBm typ. 16A typ. -4.0dB typ. +20.0dBm typ. 10 9 Bypass circuit 8 7 13 Bias circuit 6 14 1 Logic circuit 5 3 4 Pin Connection 1. GND 2. GND 3. VINV 4. GND 5. GND 6. GND 7. RFOUT * Exposed PAD: GND 8. GND 9. GND 10. GND 11. GND 12. RFIN 13. GND 14. VCTL 2 ! TRUTH TABLE "H"=VCTL(H), "L"=VCTL(L) VCTL H L LNA Mode High Gain mode Low Gain mode Note: Specifications and description listed in this datasheet are subject to change without notice. Ver.2008-08-01 -1- NJG1129MD7 ! ABSOLUTE MAXIMUM RATINGS Ta=+25C, Zs=Zl=50 ohm PARAMETER Drain voltage Inverter voltage Control voltage Input power Power dissipation Operating temperature Storage temperature SYMBOL VDD VINV VCTL Pin PD Topr Tstg VDD=VINV=2.8V 4-layer FR4 PCB with through-hole (74.2x74.2mm), Tj=150C CONDITIONS RATINGS 5.0 5.0 5.0 +15 1300 -40~+85 -55~+150 UNITS V V V dBm mW C C ! ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS) General conditions: VDD=VINV=2.8V, Ta=+25C, Zs=Zl=50 ohm, with application circuit PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating voltage Inverter voltage Control voltage (High) Control voltage (Low) VDD VINV VCTL(H) VCTL(L) IDD1 IDD2 IINV1 IINV2 ICTL RF OFF, VCTL=1.85V RF OFF, VCTL=0V RF OFF, VCTL=1.85V RF OFF, VCTL=0V RF OFF, VCTL=1.85V 2.3 2.3 1.5 0 - 2.8 2.8 1.85 0 5.0 1 90 15 5 3.6 3.6 3.6 0.3 8.0 5 180 40 10 V V V V mA A A A A Operating current1 Operating current2 Inverter current1 Inverter current2 Control current -2- NJG1129MD7 ! ELECTRICAL CHARACTERISTICS2 (High Gain mode) General conditions: VDD=VINV=2.8V, VCTL=1.85V, Ta=+25C, Zs=Zl=50 ohm, with application circuit PARAMETERS Operating frequency Small signal gain1 Noise figure Input power at 1dB gain compression point1 Input 3rd order intercept point1 RF IN VSWR1 RF OUT VSWR1 SYMBOL fRF Gain1 NF P-1dB(IN)1 IIP3_1 VSWRi1 VSWRo1 f1=fRF, f2=fRF+100kHz, PIN=-25dBm Exclude PCB & connector losses*1 CONDITIONS MIN 470 11.0 -14.0 -6.0 TYP 620 15.0 1.4 -6.0 +1.0 1.5 1.5 MAX 770 19.0 1.9 4.5 2.8 UNITS MHz dB dB dBm dBm - ! ELECTRICAL CHARACTERISTICS3 (Low Gain mode) General conditions: VDD=VINV=2.8V, VCTL=0V, Ta=+25C, Zs =Zl=50 ohm, with application circuit. PARAMETERS Operating frequency Small signal gain2 Input power at 1dB gain compression point2 Input 3rd order intercept point2 RF IN VSWR2 RF OUT VSWR2 SYMBOL fRF Gain2 P-1dB(IN)2 IIP3_2 VSWRi2 VSWRo2 f1=fRF, f2=fRF+100kHz, PIN=-12dBm Exclude PCB & connector losses*2 CONDITIONS MIN 470 -6.0 +5.0 +14.0 TYP 620 -4.0 +12.0 +20.0 1.5 1.5 MAX 770 3.0 2.8 UNITS MHz dB dBm dBm - *1 Input PCB and connector losses: 0.036dB(at 470MHz), 0.053dB(at 770MHz) *2 Input & output PCB and connector losses: 0.072dB(at 470MHz), 0.105dB(at 770MHz) -3- NJG1129MD7 ! TERMINAL INFORMATION No. 1, 2, 4, 5, 6, 8, 9, 10, 11, 13 3 SYMBOL DESCRIPTION Ground terminal. These terminals should be connected to the ground plane as close as possible for excellent RF performance. GND VINV Inverter voltage supply terminal. RF Output terminal. RF signal comes out from this terminal, and goes through an external matching circuit connected to this. Inductor L4 as shown in the application circuit is a part of an external matching circuit, and also provide DC power to LNA. RF input terminal. The RF signal is input through external matching circuit connected to this terminal. Since this IC is integrated an input DC blocking capacitor. 7 RFOUT 12 RFIN 14 VCTL Control voltage supply terminal. -4- NJG1129MD7 ! ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: Ta=+25C, VDD= VINV=2.8V, VCTL=1.85V, Zs=Zl=50 ohm, with application circuit Pout vs. Pin (f=620MHz) 15 10 5 0 Pout (dBm) Gain (dB) 15 20 Gain 8 IDD (mA) Gain, IDD vs. Pin (f=620MHz) 10 -5 -10 -15 -20 -25 P-1dB(IN)=-6.0dBm -30 -40 Pout 10 IDD 6 5 4 P-1dB(IN)=-6.0dBm 0 2 -40 -35 -30 -25 -20 -15 -10 -5 0 Pin (dBm) -35 -30 -25 -20 Pin (dBm) -15 -10 -5 0 Pout, IM3 vs. Pin (f1=620MHz, f2=620.1MHz) 20 0 Pout Pout, IM3 (dBm) -20 Gain, NF vs. Frequency 19 18 17 Gain (dB) 16 15 14 Gain 4 3.5 3 2.5 2 1.5 NF 1 0.5 (Exclude PCB, Connector Losses) 10 -40 -60 IM3 -80 IIP3=+4.5dBm -100 -40 -30 -20 -10 0 13 12 11 400 450 500 550 600 650 700 750 0 800 Pin (dBm) Frequency (MHz) P-1dB(IN) vs. Frequency 0 IIP3, OIP3 vs. Frequency (f1=frequency, f2=f1+100kHz, Pin=-25dBm) 25 20 OIP3 -5 P-1dB(IN) (dBm) -10 IIP3, OIP3 (dBm) P-1dB(IN) 15 10 5 IIP3 0 -5 400 -15 -20 400 450 500 550 600 650 Frequency (MHz) 700 750 800 450 500 550 600 650 700 750 800 Frequency (MHz) -5- NF (dB) NJG1129MD7 ! ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: Ta=+25C, VDD= VINV=2.8V, VCTL=1.85V, Zs=Zl=50 ohm, with application circuit Gain, NF vs. VDD=VINV K-factor vs. Frequency 20 (f=620MHz) 20 4 3.5 Gain 15 15 Gain (dB) 3 2.5 K-factor 10 10 2 1.5 5 5 NF 1 0.5 0 0 5000 10000 15000 20000 0 0 1 2 3 VDD (V) 4 5 Frequency (MHz) 0 P-1dB(IN) vs. VDD=VINV (f=620MHz) 5 25 20 IIP3, OIP3 vs. VDD=VINV (f1=620MHz, f2=620.1MHz, Pin=-25dBm) 0 P-1dB(IN) (dBm) IIP3, OIP3 (dBm) 15 OIP3 10 5 0 -5 IIP3 -5 P-1dB(IN) -10 -15 0 1 2 VDD (V) 3 4 5 0 1 2 VDD (V) 3 4 5 IDD vs. VDD=VINV 15 8 7 VSWRi(max.), VSWRo(max) 6 VSWR vs. VDD=VINV 10 IDD (mA) VSWRi(max.) 5 4 3 2 VSWRo(max.) 1 5 IDD 0 0 1 2 VDD (V) 3 4 5 0 0 1 2 VDD (V) 3 4 5 -6- NF (dB) NJG1129MD7 ! ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: Ta=+25C, VDD=2.8V, Zs=Zl=50 ohm, with application circuit IDD vs. VCTL 6 5 4 IDD (mA) 3 2 1 0 0 0.5 1 1.5 2 VCTL (V) -7- NJG1129MD7 ! ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VDD= VINV=2.8V, VCTL=1.85V, Zs=Zl=50 ohm, with application circuit Gain, NF vs. Temp. (fRF=620MHz) 20 Gain 15 Gain (dB) 4 3.5 P-1dB(IN) vs. Temp. (fRF=620MHz) 0 -2 3 2.5 10 NF 5 1 2 1.5 NF (dB) P-1dB(IN) (dBm) -4 P-1dB(IN) -6 -8 0.5 0 -50 0 100 0 50 o Temperature ( C) -10 -50 0 50 o Temperature ( C) 100 IIP3, OIP3 vs. Temp. (f1=620MHz, f2=620.1MHz, Pin=-25dBm) 25 7 6 20 OIP3 IIP3, OIP3 (dBm) IDD (mA) 15 5 IDD 4 3 2 5 IIP3 1 0 -50 0 -50 IDD vs. Temp. (RF OFF) 10 0 o 50 Temperature ( C) 100 0 o 50 Temperature ( C) 100 VSWR vs. Temp. (fRF=470~770MHz) 8 7 VSWRi(max.), VSWRo(max.) 6 IDD (mA) 6 5 4 3 2 o IDD vs. VCTL 5 4 3 2 VSWRo(max.) 1 0 -50 VSWRi(max.) 85 C 75 C 50 C 25 C o o o 0C -25 C -40 C o o o 1 0 0 o 50 Temperature ( C) 100 0 0.5 1 VCTL (V) 1.5 2 -8- NJG1129MD7 ! ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: Ta=+25C, VDD= VINV=2.8V, VCTL=1.85V, Zs=Zl=50 ohm, with application circuit S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (50MHz~20GHz) S21, S12 (50MHz~20GHz) -9- NJG1129MD7 ! ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: Ta=+25C, VDD= VINV=2.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit Pout vs. Pin (f=620MHz) 10 5 0 -5 Pout (dBm) Gain (dB) -2 Gain -4 0.8 0 Gain, IDD vs. Pin (f=620MHz) 1 -15 -20 -25 -30 -35 -40 -40 -30 -20 P-1dB(IN)=+13.3dBm -10 Pin (dBm) 0 10 20 Pout -6 0.4 -8 P-1dB(IN)=+13.3dBm IDD 0.2 -10 -40 0 -30 -20 -10 Pin (dBm) 0 10 20 Pout, IM3 vs. Pin (f1=620MHz, f2=620.1MHz) 20 0 -20 -40 Pout Gain (dB) -4 0 Gain, NF vs. Frequency 10 -2 Gain 8 Pout, IM3 (dBm) -6 NF 4 -60 IM3 -80 IIP3=+24.8dBm -100 -40 -30 -20 -10 0 10 20 30 -10 400 450 500 -8 2 (Exclude PCB, Connector Losses) 550 600 650 700 750 0 800 Pin (dBm) Frequency (MHz) P-1dB(IN) vs. Frequency 15 P-1dB(IN) IIP3, OIP3 vs. Frequency (f1=frequency , f2=f1+100kHz, Pin=-12dBm) 26 24 22 IIP3, OIP3 (dBm) IIP3 P-1dB(IN) (dBm) 10 20 18 OIP3 16 14 12 5 0 400 450 500 550 600 650 Frequency (MHz) 700 750 800 10 400 450 500 550 600 650 700 750 800 Frequency (MHz) - 10 - NF (dB) 6 IDD (mA) -10 0.6 NJG1129MD7 ! ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: Ta=+25C, VDD= VINV=2.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit Gain vs. Temp. K-factor vs. Frequency 20 (fRF=620MHz) 0 -1 15 Gain (dB) K-factor -2 Gain -3 10 5 -4 0 0 5000 10000 15000 20000 -5 -50 0 Frequency (MHz) 50 o Temperature ( C) 100 P-1dB(IN) vs. Temp. (fRF=620MHz) 25 30 IIP3 25 20 P-1dB(IN) (dBm) IIP3, OIP3 (dBm) 20 15 10 5 0 -50 OIP3 P-1dB(IN) 15 IIP3, OIP3 vs. Temp. (f1=620MHz, f2=620.1MHz, Pin=-12dBm) 10 5 -50 0 50 o Temperature ( C) 100 0 o 50 Temperature ( C) 100 IDD vs. Temp. (RF OFF) 1 3 VSWRi(max.) VSWRi(max.), VSWRo(max.) 2.5 2 1.5 1 0.5 0 -50 VSWR vs. Temp. (fRF=470~770MHz) 0.8 VSWRo(max.) IDD (A) 0.6 0.4 0.2 IDD 0 -50 0 o 50 Temperature ( C) 100 0 o 50 Temperature ( C) 100 - 11 - NJG1129MD7 ! ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: Ta=+25C, VDD= VINV=2.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (50MHz~20GHz) - 12 - S21, S12 (50MHz~20GHz) NJG1129MD7 ! APPLICATION CIRCUIT 11 L2 27nH RF IN L1 22nH C1 3pF 10 9 Bypass circuit 8 L3 22nH C2 5pF RF OUT L4 15nH VDD 12 LNA circuit 7 13 Bias circuit 6 C3 1000pF VCTL 14 Logic circuit 5 1 2 3 4 VINV ! TEST PCB LAYOUT Parts List VDD C3 Parts ID L1, L3, L4 Notes MURATA LQP03T series TAIYO-YUDEN HK1005 series MURATA GRM03 series RF IN L1 C1 L2 L4 L3 C2 RF OUT L2 C1~C3 VCTL VINV PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH=0.4mm (Z0=50 ohm) PCB SIZE=16.8mmx16.8mm PRECAUTIONS [1] L1-L4, C1 and C2 formed the external matching circuit. [2] C3 is a bypass capacitor. [3] Ground terminals should be connected with ground plane as close as possible in order to avoid parasitic inductance. [4] Please place the ground trace between RFIN(12pin) and RFOUT(7pin) on the top PCB layout to have better isolation between input and output RF ports. [5] Please place all external parts around the IC as close as possible. - 13 - NJG1129MD7 ! MEASUREMENT BLOCK DIAGRAM VINV=2.8V VCTL=1.85V or 0.0V VDD =2.8V RF Input DUT RF Output Network Analyzer S parameter Measurement Block Diagram VINV=2.8V VCTL=1.85V or 0.0V VDD =2.8V RF Input DUT RF Output Noise Source NF Analyzer Noise Figure Measurement Block Diagram VINV=2.8V freq.1 Signal Generator 2dB Attenuator VCTL=1.85V or 0.0V VDD =2.8V RF Input Signal Generator DUT RF Output Spectrum Analyzer Power Comb. 2dB Attenuator Input IP3 Measurement Block Diagram freq.2 - 14 - NJG1129MD7 ! PACKAGE OUTLINE (EQFN14-D7) Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. - 15 - |
Price & Availability of NJG1129MD7
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |