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| TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 DEVICES LEVELS 2N6849 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Drain - Source Voltage Gate - Source Voltage Continuous Drain Current TC = +25C Continuous Drain Current TC = +100C Max. Power Dissipation Drain to Source On State Resistance Operating & Storage Temperature Note: (1) Derated Linearly by 0.2 W/C for TC > +25C (2) VGS = -10Vdc, ID = -4.1A ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Drain-Source Breakdown Voltage VGS = 0V, ID = -1mAdc Gate-Source Voltage (Threshold) VDS VGS, ID = -0.25mA VDS VGS, ID = -0.25mA, Tj = +125C VDS VGS, ID = -0.25mA, Tj = -55C Gate Current VGS = 20V, VDS = 0V VGS = 20V, VDS = 0V, Tj = +125C Drain Current VGS = 0V, VDS = -80V VGS = 0V, VDS = -80V, Tj = +125C Static Drain-Source On-State Resistance VGS = -10V, ID = -4.1A pulsed VGS = -10V, ID = -6.5A pulsed Tj = -125C VGS = -10V, ID = -4.1A pulsed Diode Forward Voltage VGS = 0V, ID = -6.5A pulsed Symbol V(BR)DSS VGS(th)1 VGS(th)2 VGS(th)3 IGSS1 IGSS2 IDSS1 IDSS2 rDS(on)1 rDS(on)2 rDS(on)3 VSD Min. -100 -2.0 -1.0 -5.0 -4.0 Max. Unit Vdc Symbol VDS VGS ID1 ID2 Ptl Rds(on) Top, Tstg Value -100 20 -6.5 -4.1 25 0.3 (1) (2) Unit Vdc Vdc Adc Adc W C TO-205AF (formerly TO-39) -55 to +150 Vdc 100 200 nAdc -25 -0.25 0.3 0.32 0.54 -4.3 Adc mAdc Vdc T4-LDS-0009 Rev. 1 (072018) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge SWITCHING CHARACTERISTICS Parameters / Test Conditions Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time Diode Reverse Recovery Time ID = -6.5A, VGS = -10Vdc, Gate drive impedance = 7.5, VDD = -40Vdc di/dt -100A/s, VDD -50V, IF = -6.5A Symbol td(on) tr td(off) tf trr Min. Max. 60 140 140 140 250 Unit Symbol Qg(on) Qgs Qgd Min. Max. 34.8 6.8 23.1 Unit nC VGS = -10V, ID = -6.5A VDS = -50V ns ns T4-LDS-0009 Rev. 1 (072018) Page 2 of 2 |
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