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 JMnic
Product Specification
Silicon PNP Power Transistors
2SB761 2SB761A
DESCRIPTION With TO-220C package Complement to type 2SD856/856A Low collector saturation voltage APPLICATIONS For audio frequency power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Tc=25ae )
SYMBOL PARAMETER 2SB761 VCBO Collector-base voltage 2SB761A 2SB761 VCEO Collector-emitter voltage 2SB761A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collectorl power dissipation Junction temperature Storage temperature TC=25ae Open collector Open base -80 -5 -3 -5 35 150 -55~150 ae ae V A A W Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER 2SB761 IC=-30mA; IB=0 2SB761A VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage 2SB761 2SB761A ICEO IEBO hFE-1 hFE-2 Collector cut-off current Emitter cut-off current DC current gain DC current gain IC=-3 A;IB=-0.375 A IC=-3A ; VCE=-4V VCE=-60V; VBE=0 CONDITIONS
2SB761 2SB761A
SYMBOL
MIN -60
TYP.
MAX
UNIT
VCEO
Collector-emitter breakdown voltage
V -80 -1.2 -1.8 V V
ICES
Collector cut-off current
-200 VCE=-80V; VBE=0 VCE=-60V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-3A ; VCE=-4V 40 10 -300 -1 250
|I
A
|I
A mA
Switching times ton toff Turn-on time IC=-1A ; IB1=-IB2=-0.1 A Turn-off time 2.0 |I s 0.5 |I s
hFE-1 classifications R 40-90 Q 70-150 P 120-250
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB761 2SB761A
Fig.2 Outline dimensions (unindicated tolerance:A
0.10 mm)
3


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