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TYPICAL PERFORMANCE CURVES
APT25GT120BRDL(G) 1200V
APT25GT120BRDL(G)
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Resonant Mode IGBT(R)
The Thunderbolt IGBT(R) used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT(R) offers superior ruggedness and ultrafast switching speed.
Features * Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff * Low forward Diode Voltage (VF) * Ultrasoft Recovery Diode * SSOA Rated * RoHS Compliant Typical Applications * Induction Heating * Welding * Medical * High Power Telecom * Resonant Mode Phase Shifted Bridge
G C E
TO -2 47
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT25GT120BRDL(G) UNIT Volts
1200 30 54 25 75 75A @ 1200V 347 -55 to 150 300
Amps
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.5mA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX Units
1200 4.5 2.7 5.5 3.2 3.9 200
2
6.5 3.7
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
2
I CES I GES
A nA
6-2009 052-6349 Rev B
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
1250 120
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT25GT120BRDL(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 600V I C = 25A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 1200V Inductive Switching (25C) VCC = 800V VGE = 15V I C = 25A
4 5
MIN
TYP
MAX
UNIT
1845 170 110 10.0 170 20 100 75 14 27 150 36 930 1860 720 14 27 175 45 925 3265 965 J
ns ns A nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55
RG = 5 TJ = +25C
Turn-on Switching Energy (Diode)
6
J
Inductive Switching (125C) VCC = 800V VGE = 15V I C = 25A RG = 5 TJ = +125C
Turn-on Switching Energy (Diode)
6
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.36 1.4 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.)
6-2009
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6349
Rev B
TYPICAL PERFORMANCE CURVES
80 70 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 60 50 40 30 20 10 0 0 2 4 6 8 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE V
GE
= 15V
100
APT25GT120BRDL(G)
15V 13V
80
TJ = 25C TJ = 125C TJ = -55C
60
12V
11V 40 10V 20 9V
0
8V 7V 0 5 10 15 20 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25C) 80 70 IC, COLLECTOR CURRENT (A) 60 50 40 30 20 10 0 0 TJ = 25C TJ = 125C VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 125C) 16
I = 25A C T = 25C
J
TJ = -55C
14 12 10 8 6 4 2 0 0
VCE = 240V VCE = 600V
VCE = 960V
2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
20 40 60 80 100 120 140 160 180 200 GATE CHARGE (nC) FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
6 IC = 50A 5 4
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
6 5 4 3 2 1 0 IC = 12.5A IC = 50A IC = 25A
IC = 25A 3 2 1 0 IC = 12.5A
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10
6
25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 80
0
IC, DC COLLECTOR CURRENT(A)
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.05 1.00 0.95 0.90 0.85 0.80
70 60 50 40 30 20 10 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50 6-2009 052-6349 Rev B
0.75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
APT25GT120BRDL(G)
30 25 20 15 10 5 T = 25C, or 125C J 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 70 60 50 40 30
TJ = 25 or 125C,VGE = 15V RG = 5, L = 100H, VCE = 800V VCE = 800V
200 td (OFF), TURN-OFF DELAY TIME (ns) 180 160 140 120 100 80 60 40
VCE = 800V 20 RG = 5 VGE =15V,TJ=125C VGE =15V,TJ=25C
td(ON), TURN-ON DELAY TIME (ns)
VGE = 15V
0
RG = 5 L = 100H
10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 50 45 40
RG = 5, L = 100H, VCE = 800V
0
L = 100H
tr, RISE TIME (ns)
tf, FALL TIME (ns)
35 30 25 20 15 10
TJ = 25C, VGE = 15V
TJ = 125C, VGE = 15V
20 10 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 10,000
V = 800V CE V = +15V GE R = 5
G
5 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 2500 EOFF, TURN OFF ENERGY LOSS (J)
V = 800V CE V = +15V GE R = 5
G
0
0
EON2, TURN ON ENERGY LOSS (J)
8,000
TJ = 125C
2000
TJ = 125C
6,000
1500
4,000
1000
TJ = 25C
2,000
TJ = 25C
500
10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 18,000 SWITCHING ENERGY LOSSES (J) 16,000 14,000 12,000 10,000 8,000 6,000 4,000 2,000 0 0
Eon2,25A Eon2,12.5A Eoff,25A Eoff,12.5A Eoff,50A
V = 800V CE V = +15V GE T = 125C
J
0
10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 9,000 SWITCHING ENERGY LOSSES (J)
V = 800V CE V = +15V GE R = 5
G
0
Eon2,50A
8,000 7,000 6,000 5,000 4,000 3,000 2,000 1,000 0 0
Eon2,50A
6-2009
Eon2,25A Eon2,12.5A Eoff,12.5A
Eoff,50A Eoff,25A
Rev B
052-6349
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
3,000 IC, COLLECTOR CURRENT (A) Cies
80 70 60 50 40 30 20 10
APT25GT120BRDL(G)
1,000 C, CAPACITANCE ( F) 500
P
Coes 100 Cres 50
10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0
0.40 0.35 0.30 0.25 0.20 0.15 0.3 0.10 0.05 0 10-5 0.1 0.05 10-4 SINGLE PULSE 0.7 D = 0.9
ZJC, THERMAL IMPEDANCE (C/W)
0.5
Note:
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
140 FMAX, OPERATING FREQUENCY (kHz)
50
10 5
F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf f max2 = Pdiss = Pdiss - P cond E on2 + E off TJ - T C R JC
1
5
10
15
20
25
30
35
40
45
50
IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
052-6349
Rev B
6-2009
APT25GT120BRDL(G)
APT15DL120
10%
Gate Voltage TJ = 125C
td(on)
V CC
IC
V CE
tr Collector Current 90% 5% 10% 5% Collector Voltage
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage td(off) 90% Collector Voltage tf 10%
TJ = 125C
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
052-6349
Rev B
6-2009
TYPICAL PERFORMANCE CURVES
APT25GT120BRDL(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Characteristic / Test Conditions Maximum Average Forward Current (TC = 115C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms)
All Ratings: TC = 25C unless otherwise specified.
APT25GT120BRDL(G) UNIT Amps
15 30 60
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions IF = 15A VF Forward Voltage IF = 30A IF = 15A, TJ = 125C MIN TYP MAX UNIT Volts
1.6 2.0 1.6
MIN TYP
2.1
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions MAX UNIT ns nC Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
1.6 ZJC, THERMAL IMPEDANCE (C/W) 1.4 1.2 1.0 0.8 0.5 0.4 0.2 0 10-5 0.3 0.1 0.05 10-4 SINGLE PULSE 0.7 0.9
51 523 1492 7 716 2886 8 233 2873 25 -
IF = 15A, diF/dt = -200A/s VR = 800V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF = 15A, diF/dt = -200A/s VR = 800V, TC = 125C
-
IF = 15A, diF/dt = -1000A/s VR = 800V, TC = 125C
0.5
Note:
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
1.0 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 6-2009 052-6349 Rev B
APT25GT120BRDL(G)
60 TJ= 125C trr, COLLECTOR CURRENT (A) 50 IF, FORWARD CURRENT (A) TJ= 55C 40 30 20 10 0 TJ= 25C TJ= 150C 700 600 500 400 300 200 100 0 800 30A 15A 7.5A
T = 125C J V = 800V
R
1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage
T = 125C J V = 800V
R
0
Qrr, REVERSE RECOVERY CHARGE (nC)
5000
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 30 IRRM, REVERSE RECOVERY CURRENT (A)
T = 125C J V = 800V
R
30A
30A 15A 7.5A
4000 15A 7.5A 2000
25 20 15 10 5 0
3000
1000
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.2 1.0 0.8 0.6 QRR 0.4 0.2 0 IRRM
0
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 45 40 35 30 IF(AV) (A) 25 20 15 10 5
Duty cycle = 0.5 TJ = 45C
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
tRR
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (C) FIGURE 6, Dynamic Parameters vs Junction Temperature 600 CJ, JUNCTION CAPACITANCE (pF) 500 400 300 200 100 0
Case Temperature (C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature
052-6349
Rev B
6-2009
100 200 300 400 500 600 700 800 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage
0
TYPICAL PERFORMANCE CURVES
Vr +18V 0V D.U.T. 30H diF /dt Adjust
APT10078BLL
APT25GT120BRDL(G)
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 32. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
0.25 IRRM
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
Gate Collector (Cathode) Emitter (Anode)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6349
Rev B
6-2009

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