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| BAT54TW / BAT54ADW /BAT54CDW BAT54SDW/ BAT54BRW Elektronische Bauelemente Surface Mount Schottky Barrier Diode Array RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-363 Dim A * * * Low Turn-on Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 0 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8 A B BC C D F H M 0.65 Nominal MECHANICAL DATA H K * * * * * Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Below Weight: 0.016 grams (approx.) Mounting Position: Any 6 5 O J K L M a J D F L 4 1 2 3 All Dimensions in mm BAT54TW Marking: KLA BAT54ADW Marking: KL6 BAT54CDW Marking: KL7 BAT54SDW Marking: KL8 BAT54BRW Marking:KLB MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @ TA = 25C Derate above 25C Forward Current (DC) Junction Temperature Storage Temperature Range Symbol VR PF 225 1.8 IF TJ Tstg 200 Max 125 Max - 55 to +150 mW mW/C mA C C Value 30 Unit Volts ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Characteristic Reverse Breakdown Voltage (IR = 10 A) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Current (DC) Repetitive Peak Forward Current Non-Repetitive Peak Forward Current (t < 1.0 s) Symbol V(BR)R CT IR VF VF VF trr VF VF IF IFRM IFSM Min 30 -- -- -- -- -- -- -- -- -- -- -- Typ -- 7.6 0.5 0.22 0.41 0.52 -- 0.29 0.35 -- -- -- Max -- 10 2.0 0.24 0.5 1.0 5.0 0.32 0.40 200 300 600 Unit Volts pF Adc Vdc Vdc Vdc ns Vdc Vdc mAdc mAdc mAdc http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 Elektronische Bauelemente BAT54TW / BAT54ADW /BAT54CDW BAT54SDW/ BAT54BRW Surface Mount Schottky Barrier Diode Array 820 +10 V 2k 100 H 0.1 F DUT 50 utput Pulse Generator 50 Input Sampling Oscilloscope 90% VR Input Signal IR IR(REC) = 1 mA Output Pulse (IF = IR = 10 mA; measured at IR(REC) = 1 mA) IF 0.1 F tr 10% tp t IF trr t Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 100 1000 TA = 150C 100 10 1 50C IR , Reverse Current (A) IF, Forward Current (mA) TA = 125C 10 1.0 TA = 85C 0.1 0.01 TA = 25C 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0 5 V F, Forward Voltage (V) 10 15 20 VR, Reverse Voltage (V) 25 30 1 25C 1.0 85C 25C - 40C - 55C 0.1 0.0 Figure 2. Forward Voltage Figure 3. Leakage Current 14 12 C T , Total Capacitance (pF) 10 8 6 4 2 0 0 5 10 15 20 25 30 VR, Reverse Voltage (V) Figure 4. Total Capacitance http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2 |
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