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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D186
BC368 NPN medium power transistor; 20 V, 1 A
Product data sheet Supersedes data of 2003 Dec 01 2004 Nov 05
NXP Semiconductors
Product data sheet
NPN medium power transistor; 20 V, 1 A
FEATURES * High current. APPLICATIONS * Linear voltage regulators * Low side switch * Supply line switch for negative voltages * MOSFET driver * Audio (pre-) amplifier. DESCRIPTION IC ICM hFE QUICK REFERENCE DATA SYMBOL VCEO PARAMETER collector-emitter voltage collector current (DC) DC current gain
BC368
MIN. MAX. UNIT - - 85 20 1 2 375 V A A -
peak collector current -
NPN medium power transistor (see "Simplified outline, symbol and pinning" for package details). PRODUCT OVERVIEW PACKAGE TYPE NUMBER PHILIPS BC368 SOT54 EIAJ SC-43A C368 BC369 MARKING CODE PNP COMPLEMENT
SIMPLIFIED OUTLINE, SYMBOL AND PINNING PINNING TYPE NUMBER BC368 SIMPLIFIED OUTLINE AND SYMBOL PIN 1 2
1 handbook, halfpage 2 3
DESCRIPTION base collector emitter
2 1 3
3
MAM259
ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BC368 SC-43A DESCRIPTION plastic single-ended (through hole) package; 3 leads VERSION SOT54
2004 Nov 05
2
NXP Semiconductors
Product data sheet
NPN medium power transistor; 20 V, 1 A
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Notes 1. Refer to SOT54 (SC-43A) standard mounting conditions. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage output current (DC) peak collector current peak collector current total power dissipation storage temperature junction temperature ambient temperature Tamb 25 C; notes 1 and 2 open base open collector CONDITIONS open emitter - - - - - - - -65 - -65 MIN.
BC368
MAX. 32 20 5 1 2 200 0.83 +150 150 +150 V V V
UNIT
mA mA mA W C C C
handbook, halfpage
1000 Ptot (mW)
MLE329
800
600
400
200
0 -65
-5
55
175 115 Tamb (C)
Fig.1 Power derating curve.
2004 Nov 05
3
NXP Semiconductors
Product data sheet
NPN medium power transistor; 20 V, 1 A
THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Notes 1. Refer to SOT54 (SC-43A) standard mounting conditions. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint. PARAMETER thermal resistance from junction to ambient CONDITIONS Tamb 25 C; notes 1 and 2 VALUE 150
BC368
UNIT K/W
103 handbook, full pagewidth Zth (K/W) 102
(1) (2) (3) (4) (5) (6)
MLE330
10
(7) (8) (9)
P 1
(10)
=
tp T
tp T 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102
t
tp (s)
103
(1) = 1. (2) = 0.75.
(3) = 0.5. (4) = 0.33.
(5) = 0.2. (6) = 0.1.
(7) = 0.05. (8) = 0.02.
(9) = 1. (10) = 0.
Fig.2 Transient thermal impedance as a function of pulse time; typical values.
2004 Nov 05
4
NXP Semiconductors
Product data sheet
NPN medium power transistor; 20 V, 1 A
CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS VCB = 25 V; IE = 0 A VCB = 25 V; IE = 0 A; Tamb = 150 C IEBO hFE emitter-base cut-off current DC current gain VEB = 5 V; IC = 0 A VCE = 10 V; IC = 5 mA VCE = 1 V; IC = 500 mA VCE = 1 V; IC = 1 mA VCEsat VBE Cc fT collector-emitter saturation voltage IC = 1 A; IB = 100 mA base-emitter voltage collector capacitance transition frequency VCE = 10 V; IC = 5 mA VCE = 1 V; IC = 1 A VCB = 10 V; IE = ie = 0 A; f = 1 MHz VCE = 5 V; IC = 50 mA; f = 100 MHz MIN. - - - 50 85 60 - - - - 40 TYP. - - - - - - - - - 22 170
BC368
MAX. 100 10 100 - 375 - 500 700 1 - -
UNIT nA A nA
mV mV V pF MHz
handbook, halfpage I (1) (2) (3)
2.4 C (A) 2.0
MLE325
1 handbook, halfpage
MLE326
VBE (V)
1.6
(4) (5)
1.2
(6) (7)
0.8
(8) (9)
0.4
(10)
0 0 1 2 3 4 VCE (V) 5
10-1 10-4
10-3
10-2
10-1
1 IC (A)
10
Tamb = 25 C. (1) IB = 10 mA. (2) IB = 9 mA. (3) IB = 8 mA. (4) IB = 7 mA. (5) IB = 6 mA. (6) IB = 5 mA. (7) IB = 4 mA. (8) IB = 3 mA. (9) IB = 2 mA. (10) IB = 1 mA.
VCE = 1 V.
Fig.3
Collector current as a function of collector-emitter voltage; typical values.
Fig.4
Base-emitter voltage as function of collector current; typical values.
2004 Nov 05
5
NXP Semiconductors
Product data sheet
NPN medium power transistor; 20 V, 1 A
BC368
103 handbook, halfpage
MLE327
handbook, halfpage
1
MLE328
hFE
VCEsat (V) 10-1
10-2
102 10-4
10-3
10-2
10-1
1 IC (A)
10
10-3 10-4
10-3
10-2
10-1
1 IC (A)
10
VCE = 1 V.
IC/IB = 10.
Fig.5
DC current gain as a function of collector current; typical values.
Fig.6
Collector-emitter saturation voltage as a function of collector current; typical values.
2004 Nov 05
6
NXP Semiconductors
Product data sheet
NPN medium power transistor; 20 V, 1 A
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
BC368
SOT54
c
E d A L b
1
D
2
e1 e
3
b1
L1
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.55 c 0.45 0.38 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1)
max.
2.5
Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 JEITA SC-43A EUROPEAN PROJECTION ISSUE DATE 04-06-28 04-11-16
2004 Nov 05
7
NXP Semiconductors
Product data sheet
NPN medium power transistor; 20 V, 1 A
DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION
BC368
This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
2004 Nov 05
8
NXP Semiconductors
Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version.
Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com
(c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands R75/05/pp9 Date of release: 2004 Nov 05 Document order number: 9397 750 13564

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