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| CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor Spec. No. : C817T3 Issued Date : 2005.10.20 Revised Date : Page No. : 1/4 BTB1424AT3 Features * Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.1A * Excellent current gain characteristics * Complementary to BTD2150AT3 * Pb-free package Symbol BTB1424AT3 Outline TO-126 BBase CCollector EEmitter ECB Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw350s, Duty2%. Symbol VCBO VCEO VEBO IC(DC) IC(pulse) Pd(Ta=25) Pd(Tc=25) Tj Tstg Limit -50 -50 -6 -3 -7 1 10 150 -55~+150 Unit V V V A A W C C *1 BTB1424AT3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. -50 -50 -6 82 120 Typ. -0.3 -1 240 35 Max. -0.1 -0.1 -0.5 -1.5 560 Unit V V V A A V V MHz pF Spec. No. : C817T3 Issued Date : 2005.10.20 Revised Date : Page No. : 2/4 Test Conditions IC=-50A, IE=0 IC=-1mA, IB=0 IE=-50A, IC=0 VCB=-40V VEB=-5V IC=-2A, IB=-0.1A IC=-2A, IB=-0.2A VCE=-2V, IC=-20mA VCE=-2V, IC=-1A VCE=-2V, IC=-0.5A, f=100MHz VCB=-10V, f=1MHz *Pulse Test : Pulse Width 380s, Duty Cycle2% Classification Of hFE 2 Rank Range Q 120~270 R 180~390 S 270~560 Ordering Information Device BTB1424AT3 Package TO-126 (Pb-free) Shipping 500 pcs / bag BTB1424AT3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 VCE=5V Spec. No. : C817T3 Issued Date : 2005.10.20 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) Current Gain---HFE 1000 VCESAT@IC=60IB 100 VCE=2V 100 VCE=1V 10 VCESAT=30IB VCESAT=10IB 10 1 10 100 1000 10000 Collector Current---IC(mA) 1 1 10 100 1000 Collector Current---IC(mA) 10000 Saturation Voltage vs Collector Current 10000 Power Dissipation---PD(W) Saturation Voltage---(mV) VBESAT@IC=10IB Power Derating Curve 1.2 1 0.8 0.6 0.4 0.2 0 1000 100 1 10 100 1000 Collector Current---IC(mA) 10000 0 50 100 150 Ambient Temperature---TA() 200 Power Derating Curve 12 Power Dissipation---PD(W) 10 8 6 4 2 0 0 50 100 150 Case Temperature---TC() 200 BTB1424AT3 CYStek Product Specification CYStech Electronics Corp. TO-126 Dimension D A B 123 G C I Spec. No. : C817T3 Issued Date : 2005.10.20 Revised Date : Page No. : 4/4 E J K M Marking: 3 4 B1424 Style: Pin 1.Emitter 2.Collector 3.Base F H L 1 2 3-Lead TO-126 Plastic Package CYStek Package Code: T3 *: Typical DIM 1 2 3 4 A B C D E Inches Min. Max. *3 *3 *3 *3 0.1500 0.1539 0.2752 0.2791 0.5315 0.6102 0.2854 0.3039 0.0374 0.0413 Millimeters Min. Max. *3 *3 *3 *3 3.81 3.91 6.99 7.09 13.50 15.50 7.52 7.72 0.95 1.05 DIM F G H I J K L M Inches Min. Max. 0.0280 0.0319 0.0480 0.0520 0.1709 0.1890 0.0950 0.1050 0.0450 0.0550 0.0450 0.0550 *0.0217 0.1378 0.1520 Millimeters Min. Max. 0.71 0.81 1.22 1.32 4.34 4.80 2.41 2.66 1.14 1.39 1.14 1.39 *0.55 3.50 3.86 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1424AT3 CYStek Product Specification |
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