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| FDP17N60N / FDPF17N60NT N-Channel MOSFET FDP17N60N / FDPF17N60NT N-Channel MOSFET 600V, 17A, 0.34 Features * RDS(on) = 0.29 ( Typ.)@ VGS = 10V, ID = 8.5A * Low Gate Charge ( Typ. 48nC) * Low Crss ( Typ. 23pF) * Fast Switching * 100% Avalanche Tested * Improved dv/dt Capability * RoHS Compliant UniFETTM July 2009 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G GDS TO-220 FDP Series GD S TO-220F FDPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 25oC) - Pulsed 17 10.2 (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 245 2.0 300 68 838 17 24.5 10 62.5 0.5 -55 to +150 -Continuous (TC = 100oC) FDP17N60N FDPF17N60NT 600 30 17* 10.2* 68* Units V V A A mJ A mJ V/ns W W/oC o o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds C C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Heat Sink Typ. Thermal Resistance, Junction to Ambient FDP17N60N FDPF17N60NT 0.51 62.5 2.0 62.5 o Units C/W (c)2009 Fairchild Semiconductor Corporation FDP17N60N/FDPF17N60NT Rev. A 1 www.fairchildsemi.com FDP17N60N / FDPF17N60NT N-Channel MOSFET Package Marking and Ordering Information Device Marking FDP17N60N FDPF17N60NT Device FDP17N60N FDPF17N60NT Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TC = 25oC ID = 250A, Referenced to VDS = 600V, VGS = 0V 25oC 600 0.8 1 10 100 V V/oC A nA VDS = 480V, VGS = 0V,TC = 150oC VGS = 30V, VDS = 0V On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 8.5A VDS = 20V, ID = 8.5A (Note 4) 3.0 - 0.29 21 5.0 0.34 - V S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 480V ID = 17A VGS = 10V VDS = 25V, VGS = 0V f = 1MHz (Note 4, 5) 2285 310 23 48 13 20 3040 410 35 65 - pF pF pF nC nC nC - Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 300V, ID = 17A VGS = 10V, RGEN = 25 (Note 4, 5) - 48 79 128 62 106 168 266 134 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 17A VGS = 0V, ISD = 17A dIF/dt = 100A/s (Note 4) - 575 7.2 74 68 1.4 - A A V ns C Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 5.8mH, IAS = 17A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 17A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP17N60N/FDPF17N60NT Rev. A 2 www.fairchildsemi.com FDP17N60N / FDPF17N60NT N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 200 100 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V *Notes: 1. 250s Pulse Test 2. TC = 25 C o Figure 2. Transfer Characteristics 100 ID, Drain Current[A] 10 ID, Drain Current[A] 10 150 C o -55 C 25 C o o 1 0.1 0.1 1 VDS, Drain-Source Voltage[V] 10 20 1 *Notes: 1. VDS = 20V 2. 250s Pulse Test 4 5 6 7 8 VGS, Gate-Source Voltage[V] 9 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 200 100 RDS(ON) [], Drain-Source On-Resistance 0.5 0.4 VGS = 10V IS, Reverse Drain Current [A] 150 C o 10 25 C o 0.3 VGS = 20V 0.2 *Note: TC = 25 C o *Notes: 1. VGS = 0V 0 10 20 30 ID, Drain Current [A] 40 50 1 0.2 2. 250s Pulse Test 0.4 0.8 1.2 VSD, Body Diode Forward Voltage [V] 1.4 Figure 5. Capacitance Characteristics 10000 Ciss Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] VDS = 120V VDS = 300V VDS = 480V 8 Capacitances [pF] 1000 Coss 6 100 *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 4 Crss 2 *Note: ID = 17A 10 0.1 1 10 VDS, Drain-Source Voltage [V] 30 0 0 10 20 30 40 Qg, Total Gate Charge [nC] 50 FDP17N60N/FDPF17N60NT Rev. A 3 www.fairchildsemi.com FDP17N60N / FDPF17N60NT N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.18 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -75 -50 *Notes: 1. VGS = 0V 2. ID = 250A Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance 2.5 2.0 1.5 1.0 0.5 0.0 -75 -50 *Notes: 1. VGS = 10V 2. ID = 8.5A 0 50 100 o TJ, Junction Temperature [ C] 150 0 50 100 o TJ, Junction Temperature [ C] 150 Figure 9. Maximum Safe Operating Area -FDPF17N60NT 200 100 ID, Drain Current [A] 100s 10s Figure 10. Maximum Drain Current vs. Case Temperature 20 10 10ms DC ID, Drain Current [A] 1ms 15 1 10 Operation in This Area is Limited by R DS(on) *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 0.1 5 0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve -FDPF17N60NT 10 Thermal Response [ZJC] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM *Notes: 0.01 0.003 -5 10 Single pulse t2 o 1. ZJC(t) = 2.0 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) t1 10 -4 10 10 10 1 Rectangular Pulse Duration [sec] -3 -2 -1 10 10 2 FDP17N60N/FDPF17N60NT Rev. A 4 www.fairchildsemi.com FDP17N60N / FDPF17N60NT N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP17N60N/FDPF17N60NT Rev. A 5 www.fairchildsemi.com FDP17N60N / FDPF17N60NT N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS * d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lta g e D r o p FDP17N60N/FDPF17N60NT Rev. A 6 www.fairchildsemi.com FDP17N60N / FDPF17N60NT N-Channel MOSFET Mechanical Dimensions TO-220 FDP17N60N/FDPF17N60NT Rev. A 7 www.fairchildsemi.com FDP17N60N / FDPF17N60NT N-Channel MOSFET Package Dimensions TO-220F Potted * Front/Back Side Isolation Voltage : 4000V Dimensions in Millimeters FDP17N60N/FDPF17N60NT Rev. A 8 www.fairchildsemi.com FDP17N60N / FDPF17N60NT N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-SPMTM PowerTrench(R) F-PFSTM The Power Franchise(R) Build it NowTM PowerXSTM FRFET(R) (R) CorePLUSTM Global Power ResourceSM Programmable Active DroopTM (R) CorePOWERTM Green FPSTM QFET TinyBoostTM CROSSVOLTTM Green FPSTM e-SeriesTM QSTM TinyBuckTM GmaxTM CTLTM Quiet SeriesTM TinyLogic(R) GTOTM Current Transfer LogicTM RapidConfigureTM TINYOPTOTM IntelliMAXTM EcoSPARK(R) TinyPowerTM ISOPLANARTM EfficentMaxTM TM TinyPWMTM MegaBuckTM Saving our world, 1mW /W /kW at a timeTM EZSWITCHTM * TinyWireTM TM* MICROCOUPLERTM SmartMaxTM TriFault DetectTM MicroFETTM SMART STARTTM TRUECURRENTTM* MicroPakTM SPM(R) (R) SerDesTM MillerDriveTM STEALTHTM Fairchild(R) MotionMaxTM SuperFETTM Fairchild Semiconductor(R) Motion-SPMTM SuperSOTTM-3 FACT Quiet SeriesTM OPTOLOGIC(R) SuperSOTTM-6 UHC(R) (R) (R) FACT SuperSOTTM-8 OPTOPLANAR Ultra FRFETTM (R) FAST(R) SupreMOSTM UniFETTM FastvCoreTM SyncFETTM VCXTM FETBenchTM Sync-LockTM VisualMaxTM PDP SPMTM (R) FlashWriter * XSTM (R)* Power-SPMTM FPSTM *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 FDP17N60N/FDPF17N60NT Rev. A 9 www.fairchildsemi.com |
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