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NTK3043N Power MOSFET
20 V, 285 mA, N-Channel with ESD Protection, SOT-723
Features
* * * * * * *
Enables High Density PCB Manufacturing 44% Smaller Footprint than SC-89 and 38% Thinner than SC-89 Low Voltage Drive Makes this Device Ideal for Portable Equipment Low Threshold Levels, VGS(TH) < 1.3 V Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin Environments such as Portable Electronics Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels Using the Same Basic Topology These are Pb-Free Devices
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V(BR)DSS RDS(on) TYP 1.5 W @ 4.5 V 20 V 2.4 W @ 2.5 V 5.1 W @ 1.8 V 6.8 W @ 1.65 V 285 mA ID Max
Top View 3
Applications
* Interfacing, Switching * High Speed Switching * Cellular Phones, PDAs
MAXIMUM RATINGS (TJ = 25C unless otherwise stated)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State tv5s Power Dissipation (Note 1) Steady State tv5s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State TA = 25C TA = 85C TA = 25C PD IDM ID TA = 25C TA = 85C TA = 25C TA = 25C PD 545 mA mW mA C mA C KA M 210 155 310 400 -55 to 150 286 260 ID Symbol VDSS VGS Value 20 10 255 185 285 440 mW mA Unit V V 1
2 1 - Gate 2 - Source 3 - Drain
MARKING DIAGRAM
KA SOT-723 CASE 631AA 1
tp = 10 ms
= Device Code = Date Code
Operating Junction and Storage Temperature TJ, TSTG Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8" from case for 10 seconds) IS TL
ORDERING INFORMATION
Device NTK3043NT1G NTK3043NT5G Package SOT-723* SOT-723* Shipping 4000 / Tape & Reel 8000 / Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2. Surface-mounted on FR4 board using the minimum recommended pad size.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *These packages are inherently Pb-Free.
(c) Semiconductor Components Industries, LLC, 2006
1
April, 2006 - Rev. 3
Publication Order Number: NTK3043N/D
M
NTK3043N
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient - Steady State (Note 3) Junction-to-Ambient - t = 5 s (Note 3) Junction-to-Ambient - Steady State Minimum Pad (Note 4) Symbol RqJA RqJA RqJA Max 280 228 400 C/W Unit
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 4. Surface-mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 100 mA ID = 100 mA, Reference to 25C VGS = 0 V, VDS = 16 V TJ = 25C TJ = 125C IGSS V(BR)DSS V(BR)DSS/TJ IDSS 20 27 1 10 1 V mV/C mA mA Test Condition Symbol Min Typ Max Unit
Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On Resistance
VDS = 0 V, VGS = 5 V
VGS = VDS, ID = 250 mA VGS = 4.5V, ID = 10 mA VGS = 4.5V, ID = 255 mA VGS = 2.5 V, ID = 1 mA VGS = 1.8 V, ID = 1 mA VGS = 1.65 V, ID = 1 mA
VGS(TH) VGS(TH)/TJ RDS(ON)
0.4 -2.4 1.5 1.6 2.4 5.1 6.8
1.3
V mV/C
3.4 3.8 4.5 10 15 S W
Forward Transconductance
VDS = 5 V, ID = 100 mA
gFS
0.275
CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS, VGS= 4.5 V (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VGS = 0 V, IS= 286 mA Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 5. Pulse Test: pulse width v 300 ms, duty cycle v 2% 6. Switching characteristics are independent of operating junction temperatures VGS = 0 V, VDD = 20 V, dISD/dt = 100 A/ms, IS = 286 mA TJ = 25C TJ = 125C tRR ta tb QRR VSD 0.83 0.69 9.1 7.1 2.0 3.7 nC ns 1.2 V VGS = 4.5 V, VDD = 5 V, ID = 10 mA, RG = 6 W td(ON) tr td(OFF) tf 13 15 94 55 ns VGS = 0 V, f = 1 MHz, VDS = 10 V CISS COSS CRSS 11 8.3 2.7 pF
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NTK3043N
TYPICAL PERFORMANCE CURVES
0.3 ID, DRAIN CURRENT (AMPS) VGS = 3 V to 10 V TJ = 25C 0.2 2.2 V ID, DRAIN CURRENT (AMPS) 2.5 V 0.3 VDS 5 V
0.2
2.0 V 0.1 1.8 V 1.6 V 1.4 V 0 1 2 3 4 5
0.1 TJ = 25C 0 1
TJ = 125C
0
TJ = -55C 1.5 2 2.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 5 ID = 0.255 A TJ = 25C 4 6
Figure 2. Transfer Characteristics
TJ = 25C 5
3
4 VGS = 2.5 V 3
2
1
2
VGS = 4.5 V
0 1 2 3 4 5 6 7 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1 0 0.1 0.2 0.3 ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance vs. Gate-to-Source Voltage
9.0 RDS(on), DRAIN-TO-SOURCE RESISTANCE 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 -50 -25 0 25 50 VGS = 4.5 V, ID = 10 mA 1 75 100 125 150 VGS = 2.5 V, ID = 10 mA VGS = 1.65 V, ID = 1 mA IDSS, LEAKAGE (nA) VGS = 1.8 V, ID = 10 mA 100 1000
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
VGS = 0 V
TJ = 150C
10
TJ = 125C
5
10
15
20
TJ, JUNCTION TEMPERATURE (C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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NTK3043N
TYPICAL PERFORMANCE CURVES
25 Ciss C, CAPACITANCE (pF) 20 Crss t, TIME (ns) 100 TJ = 25C 1000 VDD = 5 V ID = 10 mA VGS = 4.5 V td(off) tf tr td(on)
15 Ciss 10 Coss 5 VDS = 0 V 5 VGS 0 VDS VGS = 0 V 5 10 15 Crss 20
10
0 10
1
1
10 RG, GATE RESISTANCE (OHMS)
100
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Resistive Switching Time Variation vs. Gate Resistance
0.4 IS, SOURCE CURRENT (AMPS) VGS = 0 V TJ = 25C 0.3
0.2
0.1 TJ = 150C TJ = 125C 0 0.4 TJ = -55C 1.0
0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 9. Diode Forward Voltage vs. Current
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NTK3043N
PACKAGE DIMENSIONS
SOT-723 CASE 631AA-01 ISSUE B
-X- D b1 -Y-
3
A E
1 2
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
L C
HE
DIM A b b1 C D E e HE L
e
b 2X 0.08 (0.0032) X Y
MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25
INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098
SOLDERING FOOTPRINT*
0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157
0.40 0.0157
0.40 0.0157
SCALE 20:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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NTK3043N/D

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