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Ordering number : ENA1381
TIG058E8
SANYO Semiconductors
DATA SHEET
TIG058E8
Features
* * * * * * *
N-Channel IGBT
Light-Controlling Flash Applications
Low-saturation voltage. Low voltage drive (4V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 0.9mm, Mounting Area 8.12mm2. dv / dt guarantee*. Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Emitter Voltage Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Collector Current (Pulse) Maximum Collector-to-Emitter dv / dt Channel Temperature Storage Temperature Symbol VCES VGES VGES ICP dVCE / dt Tch Tstg PW1ms CM=150F, VGE=4V VCE320V, starting Tch=25C Conditions Ratings 400 6 8 150 400 150 -40 to +150 Unit V V V A V / s C C
Electrical Characteristics at Ta=25C
Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Symbol V(BR)CES ICES IGES Conditions IC=2mA, VGE=0V VCE=320V, VGE=0V VGE=6V, VCE=0V Ratings min 400 10 10 typ max Unit V A A
Marking : ZB Continued on next page. * : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), dv / dt > 400V / s will be 100% screen-detected in the circuit shown as Fig. 1. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
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D1008PJ MS IM TC-00001783 No. A1381-1/5
TIG058E8
Continued from preceding page.
Parameter Gate-to-Emitter Threshold Voltage Collector-to-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol VGE(off) VCE(sat) Cies Coes Cres Conditions VCE=10V, IC=1mA IC=100A, VGE=4V VCE=10V, f=1MHz VCE=10V, f=1MHz VCE=10V, f=1MHz Ratings min 0.4 4.0 2200 32 24 typ max 0.9 5.6 Unit V V pF pF pF
Package Dimensions
unit : mm (typ) 7011A-004
Top View 0.25 2.9 0.15 8 5 0 t o 0.02 2.8 2.3
Electrical Connection
8 7 6 5
1 : Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector
1 2 3 4
Top view
0.25
1 0.65
4 0.3
0.9
1 : Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector
Bot t om View
0.07
SANYO : ECH8
Fig.1 Large Current R Load Screening Circuit
RL CM RG +
VCC
4V 0V
TIG058E8 100k
Note1. Gate Series Resistance RG 230 is recommended for protection purpose at the time of turn OFF. However, if dv / dt 400V / s is satisfied at customer's actual set evaluation, RG < 230 can also be used. Note2. The collector voltage gradient dv / dt must be smaller than 400V / s to protect the device when it is turned off.
No. A1381-2/5
TIG058E8
200 180
IC -- VCE
Tc=25C
200
IC -- VGE
VCE=10V
Tc= 5C --2 25C 75C
Collector Current, IC -- A
Collector Current, IC -- A
10
160 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 7
V =5.0 VGE 4.0V
3.0V
180 160 140 120 100 80 60 40 20
2.5V
8
9
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Collector-to-Emitter Voltage, VCE -- V
11
VCE -- VGE
IT14281 11
Gate-to-Emitter Voltage, VGE -- V
VCE -- VGE
IT14282
Tc= --25C
Collector-to-Emitter Voltage, VCE -- V
Tc=25C
Collector-to-Emitter Voltage, VCE -- V
10 9 8 7 6 5 4 3 2 1 2 3 4 5 6 IT14283
10 9 8 7 6 5 4 3 2 1 2 3 4 5 6 IT14284
IC =150A
130A
IC=150A
130A
100A
100A
Gate-to-Emitter Voltage, VGE -- V
11
VCE -- VGE
Gate-to-Emitter Voltage, VGE -- V
12 11
VCE(sat) -- Tc
Tc=75C
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter Voltage, VCE -- V
VGE=4V
10 9 8 7 6 5 4 3 2 1 2 3 4 5 6 IT14285
10 9 8 7 6 5 4 3 2 --50 --25 0 25 50 75 100 125 150
IC =15 0A
130A
15 I C=
0A
130A
100A
100A
Gate-to-Emitter Voltage, VGE -- V Gate-to-Emitter Cutoff Voltage, VGE(off) -- V
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 --50
VGE(off) -- Tc
5 3 2
Cies, Coes, Cres -- VCE
Cies
Case Temperature, Tc -- C
IT14286
f=1MHz
Cies, Coes, Cres -- pF
1000 7 5 3 2 100 7 5 3 2 10 7
Coes
Cres
0 2 4 6 8 10 12 14 16 18 20
--25
0
25
50
75
100
125
150
Case Temperature, Tc -- C
IT14287
Collector-to-Emitter Voltage, VCE -- V
IT14288
No. A1381-3/5
TIG058E8
7 5
SW Time -- ICP
Switching Time, SW Time -- ns Fig.1 Switching test circuit VGE=4V tf VCC=320V RG=270 td (off) CM=150F PW=50s
7 5 3 2 1000 7 5 3 2 100 7 5
SW Time -- RG
Fig.1 Switching test circuit VGE=4V VCC=320V RL=2 ff) CM=150F t d(o PW=50s tf
Switching Time, SW Time -- ns
3 2
1000 7 5 3 2
tr
n) t d(o
tr
td(on)
100 7 2 3 5 7 100 2 3 IT14289
3
2
3
5
7
100
2
3
5
Collector Current (Pulse), ICP -- A
1400 1200
dv / dt -- RG
Gate Series Resistance, RG --
180
7 1000 IT14290
ICP -- VGE
Collector Current (Pulse), ICP -- A
Turn OFF, dv / dt -- V / s
1000 800 600 400 200 0 0
Fig.1 Switching test circuit VGE=4V VCC=320V RL=2 CM=150F PW=50s
160 140 120 100 80 60 40 20 0 0
VCE=320V CM=150F
Tc=25C
Tc=70C
50
100
150
200
250
300 IT14291
1
2
3
4
5
6
7
8 IT14292
Gate Series Resistance, RG --
450 400
CM -- ICP
Gate-to-Emitter Voltage, VGE -- V
Maximum Capacitor, CM -- F
350 300 250 200 150 100 50 0 0 20 40 60 80 100 120
VGE=5V VCE=320V CM=150F Tc70C
140
160
Collector Current (Pulse), ICP -- A
IT14293
No. A1381-4/5
TIG058E8
Note : TIG058E8 has protection diode between gate and emitter but handling it requires sufficient care to be taken.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of December, 2008. Specifications and information herein are subject to change without notice.
PS No. A1381-5/5

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