 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Ordering number : ENA1126 FH105A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH105A Features * High-Frequency Low-Noise Amplifier, Differential Amplifier Applications * * Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly. The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package. Optimal for differential amplification due to excellent thermal equilibrium and pair capability. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC PT Tj Tstg When mounted on ceramic substrate (250mm20.8mm) 1unit When mounted on ceramic substrate (250mm20.8mm) Conditions Ratings 20 10 1.5 30 150 300 150 --55 to +150 Unit V V V mA mW mW C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE Conditions VCB=10V, IE=0A VEB=1V, IC=0A VCE=5V, IC=10mA 90 Ratings min typ max 1.0 10 200 Unit A A Marking : 105 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. www.semiconductor-sanyo.com/network O2908AB MS IM TC-00001689 No. A1126-1/6 FH105A Continued from preceding page. Parameter DC Current Gain Ratio Base-to-Emitter Voltage Diffrence Gain-Bandwidth Product Output Capacitance Forward Transfer Gain Noise Figure Symbol Conditions Ratings min 0.7 5 8 typ 0.95 1.0 8 0.45 10 1.4 3.0 0.7 mV GHz pF dB dB max Unit hFE(small/large) VCE=5V, IC=10mA VBE(large-small) VCE=5V, IC=10mA fT VCE=5V, IC=10mA Cob 2 S21e NF VCB=10V, f=1MHz VCE=5V, IC=10mA, f=1.5GHz VCE=5V, IC=5mA, f=1.5GHz Note) The specifications shown above are for each individual transistor except the hFE(small/large) and VBE (large-small) for which pair capability is also shown. Package Dimensions unit : mm (typ) 7026-005 Electrical Connection B1 E1 E2 0.425 0.2 0.25 0.15 6 5 4 Tr1 Tr2 C1 B2 C2 2.1 1.25 0.05 0.425 1 23 0.65 2.0 0.2 1 : Collector1 2 : Base2 3 : Collector2 4 : Emitter2 5 : Emitter1 6 : Base1 SANYO : MCP6 0.9 5 3 2 hFE -- IC VCE=5V Gain-Bandwidth Product, f T -- GHz 2 f T -- IC 10 7 5 DC Current Gain, hFE 100 7 5 3 2 =5V VCE =1V VCE 3 2 10 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT00322 1.0 1.0 2 3 5 7 10 2 3 5 IT14098 Collector Current, IC -- mA Collector Current, IC -- mA No. A1126-2/6 FH105A 5 3 Cob -- VCB f=1MHz 5 Cre -- VCB f=1MHz Reverse Transfer Capacitance, Cre -- pF 2 3 5 7 1.0 2 3 5 7 10 2 3 5 3 2 Output Capacitance, Cob -- pF 2 1.0 7 5 3 2 1.0 7 5 3 2 0.1 7 5 7 0.1 0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector-to-Base Voltage, VCB -- V 12 IT00324 12 NF -- IC Collector-to-Base Voltage, VCB -- V IT00325 NF -- IC f=1.5GHz 10 10 VCE=2V f=1GHz Noise Figure, NF -- dB Noise Figure, NF -- dB 3 5 8 8 6 6 V CE=1 4 4 V 5V 2 2 0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 16 2 Forward Transfer Gain, S21e -- dB S21e -- IC 2 IT00326 16 Collector Current, IC -- mA S21e -- IC 2 IT00327 f=1.5GHz 14 12 10 2 Forward Transfer Gain, S21e -- dB f=1GHz 14 12 10 8 6 4 2 0 =1 V CE V 5V 2V =1V V CE 5V 2V 8 6 4 2 0 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 350 7 100 IT00328 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 PC -- Ta Collector Current, IC -- mA IT00329 When mounted on ceramic substrate (250mm20.8mm) Collector Dissipation, PC -- mW 300 250 200 To t al di ss ip 150 ati on 100 1u nit 50 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT00330 No. A1126-3/6 FH105A S Parameter S11e f=200MHz to 2000MHz(200MHz Step) j50 j25 120 j100 j150 j10 j200 j250 25 2.0GHz 250 150 50 100 2.0GHz VCE=5V 2.0GHz IC=10mA VCE=5V IC=5mA 0.2GHz 0.2GHz 2.0GHz --j250 0.2GHz 0.2GHz --j200 --j150 VCE=1V VCE=2V IC=1mA --j100 --j25 IC=3mA S21e f=200MHz to 2000MHz(200MHz Step) 90 60 VCE=5V IC=10mA 150 0.2GHz VCE=5V IC=5mA 2.0GHz 0.2GHz 2.0GHz VCE=2V 2.0GHz 0.2GHz I =3mA V =1V 4 8 CE 180 C 2.0GHz IC=1mA 0.2GHz 30 0 10 12 16 20 0 --j10 --150 --30 --j50 IT00331 --120 --90 S22e f=200MHz to 2000MHz(200MHz Step) j50 j25 --60 IT00332 S12e f=200MHz to 2000MHz(200MHz Step) 90 120 60 2.0GHz 2.0GHz VCE=5V 2.0GHz IC=5mA VCE=5V 2.0GHz IC=10mA 30 VCE=2V VCE=1V 0.2GHz IC=3mA IC=1mA 0.2GHz 0.2GHz 0.2GHz 0.04 0.08 0.12 0.16 0.2 0 j100 j150 150 j10 j200 j250 150 100 V =5V CE 180 0 10 25 50 250 --j10 --150 --30 --j25 --120 --90 --60 IT00333 IC=10mA 0.2GHz 0.2GHz 0.2GHz 2.0GHz 0.2GHz 2.0GHz 2.0GHz --j250 --j200 2.0GHz VCE=1V --j150 VCE=5V IC=1mA IC=5mA VCE=2V --j100 IC=3mA --j50 IT00334 No. A1126-4/6 FH105A S Parameters (Common emitter) VCE=5V, IC=5mA, ZO=50 Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.763 0.590 0.456 0.374 0.323 0.288 0.264 0.248 0.239 0.235 S11 --37.5 --65.4 --85.5 --102.0 --115.0 --127.5 --137.7 --147.4 --156.9 --165.7 S21 11.926 9.202 7.173 5.743 4.785 4.105 3.599 3.213 2.905 2.651 S21 146.9 124.3 109.4 98.7 90.5 83.6 77.5 71.3 66.4 61.3 S12 0.036 0.058 0.073 0.086 0.098 0.110 0.123 0.136 0.150 0.165 S12 70.7 60.9 57.4 56.7 56.7 57.2 57.7 57.6 57.6 57.2 S22 0.892 0.740 0.631 0.566 0.528 0.505 0.488 0.476 0.466 0.462 S22 --19.1 --29.1 --33.7 --35.8 --37.2 --38.4 --39.6 --41.2 --43.3 --45.4 VCE=5V, IC=10mA, ZO=50 Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.605 0.417 0.319 0.266 0.238 0.225 0.215 0.213 0.212 0.216 S11 --52.6 --84.6 --106.3 --124.6 --136.5 --148.9 --158.3 --167.3 --175.6 --177.5 S21 16.354 11.011 8.026 6.250 5.115 4.336 3.813 3.365 3.030 2.754 S21 136.2 113.3 100.5 91.3 84.7 78.8 73.4 68.1 63.5 58.9 S12 0.031 0.048 0.062 0.076 0.090 0.104 0.119 0.135 0.150 0.166 S12 67.5 62.4 62.2 63.4 64.3 64.4 64.5 63.8 63.1 62.5 S22 0.804 0.622 0.533 0.491 0.469 0.458 0.449 0.443 0.436 0.438 S22 --23.9 --30.5 --32.0 --32.4 --33.2 --34.6 --35.8 --37.7 --39.6 --41.9 VCE=2V, IC=3mA, ZO=50 Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.842 0.704 0.579 0.480 0.417 0.376 0.343 0.319 0.303 0.298 S11 --30.7 --56.3 --76.1 --93.1 --106.3 --119.6 --130.2 --140.5 --150.0 --160.0 S21 8.491 7.161 5.879 4.882 4.154 3.597 3.212 2.875 2.604 2.383 S21 153.0 131.9 116.3 104.2 95.0 87.1 80.2 73.4 67.7 62.1 S12 0.044 0.075 0.095 0.109 0.121 0.132 0.143 0.154 0.166 0.179 S12 72.5 60.9 54.1 51.0 49.3 48.7 48.6 48.7 48.6 48.9 S22 0.931 0.808 0.696 0.615 0.564 0.526 0.496 0.475 0.461 0.451 S22 --17.1 --28.8 --36.2 --40.6 --43.5 --45.8 --47.5 --49.6 --51.6 --52.9 VCE=1V, IC=1mA, ZO=50 Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.945 0.884 0.810 0.728 0.667 0.605 0.561 0.518 0.492 0.465 S11 --18.9 --37.3 --53.6 --69.4 --82.5 --95.8 --106.1 --117.2 --127.5 --137.9 S21 3.296 3.206 2.942 2.711 2.449 2.252 2.061 1.909 1.766 1.658 S21 162.5 145.9 131.2 117.8 107.0 96.9 88.1 79.5 72.2 65.2 S12 0.054 0.102 0.139 0.166 0.187 0.199 0.207 0.212 0.215 0.217 S12 77.2 65.9 56.3 48.6 42.5 37.3 33.5 30.6 28.6 27.6 S22 0.980 0.934 0.870 0.811 0.763 0.715 0.673 0.638 0.611 0.592 S22 --11.0 --20.5 --29.0 --35.5 --40.9 --45.7 --49.4 --53.4 --56.5 --59.9 No. A1126-5/6 FH105A SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2008. Specifications and information herein are subject to change without notice. PS No. A1126-6/6 |
Price & Availability of ENA1126
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |