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 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
OFFICE:7F.,NO.208,SEC.3,JHONGYANG Rd.,Tucheng City Taipei Hsien,Taiwan R.O.C TEL:(02)22677686(REP) FAX:(02)22675286,(02)22695616
FOUR DIGIT LED DISPLAY (0.39 Inch)
LFD435/69-XX
DATA SHEET
DOC. NO REV. DATE
: :
QW0905-LFD435/69-XX A
: 14 - Oct - 2004
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD435/69-XX Page 1/7
Package Dimensions
40.18(1.582")
L3
7.0(0.276")
10.0 (0.39")
DIG.1
DIG.2
L1 L2
DIG.3
DIG.4
12.8 (0.504")
10.16 (0.4")
DP
LFD435/69-XX LIGITEK
A F E 3.0O 0.5 D G B C DP
2.54X7=17.78(0.7") PIN NO.1
Note : 1.All dimension are in millimeters and (lnch) tolerance is O 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD435/69-XX Page 2/7
Internal Circuit Diagram
LFD4359-XX
14 16 13 3 5 11 15 7
A B C D E F G DP A B C D E F G DP L1 L2 L3 A B C D E F G DP
LFD4369-XX
DIG. 1
1
14 16 13 3 5 11 15 7
A B C D E F G DP A B C D E F G DP L1 L2 L3 A B C D E F G DP
DIG. 1
1
DIG. 2
DIG. 2
2
2
4
4
DIG. 3
DIG. 3
6
6
A B C D E F G DP
DIG. 4
8
A B C D E F G DP
DIG. 4
8
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD435/69-XX Page 3/7
Electrical Connection
PIN NO.1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
LFD4359-XX Common Cathode Dig.1 Common Cathode Dig.2 Anode D Common Cathode L1,L2,L3 Anode E Common Cathode Dig.3 Anode DP Common Cathode Dig.4 NC NO PIN Anode F NO PIN Anode C,L3 Anode A,L1 Anode G Anode B,L2
PIN NO.1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
LFD4369-XX Common Anode Dig.1 Common Anode Dig.2 Cahtode D Common Anode L1,L2,L3 Cathode E Common Anode Dig.3 Cathode DP Common Anode Dig.4 NC NO PIN Cahtode F NO PIN Cathode C,L3 Cathode A,L1 Cathode G Cathode B,L2
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD435/69-XX Page 4/7
Absolute Maximum Ratings at Ta=25 J
Ratings Parameter Symbol 9SEF Forward Current Per Chip Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) Power Dissipation Per Chip Reverse Current Per Any Chip Electrostatic Discharge Operating Temperature Storage Temperature IF IFP 30 mA UNIT
60
mA
PD Ir ESD Topr Tstg
75 10 2000 -25 ~ +85 -25 ~ +85
mW
g A g A J J
Solder Temperature 1-16 Inch Below Seating Plane For 3 Seconds At 260 J
Part Selection And Application Information(Ratings at 25J )
Electrical
PART NO
common cathode Material Emitted or anode
CHIP Common Anode
AlGaInP Orange
f D (nm)
f
(nm)
Min.
Vf(v)
Iv(mcd) Typ.
IV-M
Typ. Max. Min.
LFD4359-XX
605 Common Cathode
17
1.7
2.1
2.6
37
50
2:1
LFD4369-XX
Note : 1.The forward voltage data did not including O 0.1V testing tolerance. 2. The luminous intensity data did not including O 15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD435/69-XX Page 5/7
Test Condition For Each Parameter
Parameter Forward Voltage Per Chip Luminous Intensity Per Chip Dominant Wavelength Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio
Symbol Vf Iv
Unit volt mcd nm nm
Test Condition If=20mA If=10mA If=20mA If=20mA Vr=5V
f D f
Ir IV-M
g A
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD435/69-XX Page 6/7
Typical Electro-Optical Characteristics Curve
9SEF CHIP
Fig.1 Forward current vs. Forward Voltage
1000
Fig.2 Relative Intensity vs. Forward Current
3.0
Forward Current(mA)
100 10 1.0
Relative Intensity Normalize @20mA
1.0 2.0 3.0 4.0 5.0
2.5 2.0 1.5 1.0 0.5 0.0 1.0 10 100 1000
0.1
Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature
1.2
Forward Current(mA) Fig.4 Relative Intensity vs. Temperature
3.0
Forward Voltage@20mA Normalize @25 J
Relative Intensity@20mA Normalize @25 J
-40 -20 0 20 40 60 80 100
2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100
1.1
1.0 0.9 0.8
Ambient Temperature( J )
Ambient Temperature( J )
Fig.5 Relative Intensity vs. Wavelength
Relative Intensity@20mA
1.0
0.5
0.0 500 550 600 650
Wavelength (nm)
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD435/69-XX Page 7/7
Reliability Test:
Test Item
Test Condition
1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs)
Description
This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed.
Reference Standard
MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1
Operating Life Test
High Temperature Storage Test
1.Ta=105JO 5J 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under ondition of hogh temperature for hours.
MIL-STD-883:1008 JIS C 7021: B-10
Low Temperature Storage Test
1.Ta=-40JO 5J 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under condition of low temperature for hours.
JIS C 7021: B-12
High Temperature High Humidity Test
1.Ta=65JO 5J 2.RH=90%~95% 3.t=240hrsO 2hrs
The purpose of this test is the resistance of the device under tropical for hous.
MIL-STD-202:103B JIS C 7021: B-11
Thermal Shock Test
1.Ta=105JO 5J &-40JO (10min) (10min) 2.total 10 cycles
5J
The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire.
MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011
Solder Resistance Test
1.T.Sol=260JO 5J 2.Dwell time= 10O 1sec.
MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1
Solderability Test
1.T.Sol=230JO 5J 2.Dwell time=5O 1sec
This test intended to see soldering well performed or not.
MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2


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