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LX5510B
TM (R)
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
DESCRIPTION
KEY FEATURES Advanced InGaP HBT 2.4 - 2.5GHz Operation Single-Polarity 3.3V Supply Low Quiescent Current ICQ ~70mA Power Gain ~19dB @ 2.45GHz and Pout = 19dBm Total Current 135mA for Pout = 19dBm @ 2.45GHz OFDM EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19dBm Small Footprint (3 x 3 mm2) Low Profile (0.9mm)
APPLICATIONS
The LX5510B is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). With a single supply of 3.3 volts and a low quiescent current of 70mA the power gain is 19dB 2.4 - 2.5GHz.
For +19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 135mA total DC current with the nominal 3.3V bias. The LX5510B is available in a 16pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5510B an ideal solution for mediumgain power amplifier requirements for IEEE 802.11b/g applications
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IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com
IEEE 802.11b/g
PRODUCT HIGHLIGHT
PACKAGE ORDER INFO
TA (C) 0 to 70
LQ
Plastic MLPQ 16 pin LX5510BLQ
LX5510B LX5510B
RoHS Compliant / Pb-free
Note: Available in Tape & Reel. Append the letters "TR" to the part number. (i.e. LX5510BLQ-TR) This device is classified as EDS Level 1 in accordance with MILSTD-883, Method 3015 (HBM) testing. Appropriate ESD procedures should be used when handling this device.
Copyright (c) 2004 Rev. 1.0d, 2005-08-18
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
LX5510B
TM (R)
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
ABSOLUTE MAXIMUM RATINGS
PACKAGE PIN OUT
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DC Supply Voltage, RF off ...............................................................................6V Collector Current ........................................................................................400mA Total Power Dissipation....................................................................................2W RF Input Power........................................................................................... 15dBm Operation Ambient Temperature ...................................................-40C to +85C Storage Temperature....................................................................-65C to +150C
Package Peak Temp. for Solder Reflow (40 seconds maximum exposure) ......260(+0, -5)
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal.
VCC N.C.
15 16
VC1 N.C.
13 14
VC2 RF OUT RF OUT N.C.
12 11 10 9 8 7 6
*
1 2 3 4
N.C. RF IN RF IN N.C.
5
N.C.
LQ PACKAGE
(Bottom View)
VB1 VB2
N.C.
THERMAL DATA
RoHS / Pb-free 100% Matte Tin Lead Finish
LQ
Plastic MLPQ 16-Pin 10C/W 50C/W
THERMAL RESISTANCE-JUNCTION TO CASE, JC
THERMAL RESISTANCE-JUNCTION TO AMBIENT, JA
FUNCTIONAL PIN DESCRIPTION Name RF IN VB1 VB2 VCC RF OUT VC1 Description RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first stage. Bias current control voltage for the first stage. Bias current control voltage for the second stage. The VB2 pin can be connected with the first stage control voltage (VB1) into a single reference voltage (referred to as VREF) through an external resistor bridge. Supply voltage for the bias reference and control circuits. This pin can be combined with both VC1 and VC2 pins, resulting in a single supply voltage (referred to as VC). RF output for the power amplifier. Power supply for first stage amplifier. The VC1 feed line should be terminated with a 3.9pF bypass capacitor 50 mil apart from the device, followed by a 8.2nH blocking inductor at the supply side. This pin can be combined with VC2 and VCC pins, resulting in a single supply voltage (referred to as VC). Power supply for second stage amplifier. The VC2 feed line should be driven with a 8.2nH AC blocking inductor and 1F bypass capacitor. This pin can be combined with VC1 and VCC pins, resulting in a single supply voltage (referred to as VC). The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power amplifier.
VC2 GND
PACKAGE DATA PACKAGE DATA
Copyright (c) 2004 Rev. 1.0d, 2005-08-18
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
LX5510B
TM (R)
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
Unless otherwise specified, the following specifications apply over the operating ambient temperature 0C TA otherwise noted and the following test conditions: VC = 3.3V, VREF = 2.88V, ICQ = 70mA, TA = 25C Parameter
SECTION HEADER Frequency Range Power Gain at POUT= 19dBm EVM at Pout = 19dBm Total Current @ POUT = 19dBm Quiescent Current Bias Control Reference Current Small-Signal Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Second Harmonic Third Harmonic nd 2 Side Lobe Total current Pout=23 dBm Ramp-On Time
ELECTRICAL CHARACTERISTICS
70C except where
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Symbol
f GP
Test Conditions
Min
2.4
LX5510B Typ Max
2.5 19 3.0 135 70 1.5 19 0.5 0.5 10 10 40 -55 -55 -50 190 100
Units
GHz dB % mA mA mA dB dB dB dB dB dB dBc dBc dBc mA ns
64QAM / 54Mbps OFDM IC_TOTAL ICQ IREF S21 S21 S21 S11 S22 S12
For ICQ = 70mA Over 100MHz 0C to +70C
tON
Pout = 19dBm Pout = 19dbm 23 dBm 11 Mbps CCK 11 Mbps CCK 10 ~ 90%
Note: All measured data was obtained on a 10 mil GETEK evaluation board without heat sink.
ELECTRICALS ELECTRICALS
Copyright (c) 2004 Rev. 1.0d, 2005-08-18
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
LX5510B
TM (R)
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
S PARAMETER DATA
m1 Frequency = 2.40GHz m1 = 20.08 m2 Frequency = 2.50GHz m2 = 18.93 m3 Frequency = 2.45GHz m3 = -19.87
EVM DATA WITH 54MB/S64QAM OFDM
9 8 7
EVM_PA /(%)
Current 3.3V EVM PA Only
160 150 140 130 120 110 100 90 80 70 0 2 4 6 8 10 12 14 16 18 20 22 Output Power /(dBm)
VC = 3.3V, VREF = 2.88V, ICQ = 70mA
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50 40
dB(S(2,2)) dB(S(1,1))
30 20 10 0 -10 -20 -30 -40 -50 0 1 2
m1
6 5 4 3 2 1 0
m2 m3
dB(S(2,1)) dB(S(1,2))
3
4
5
6
7
Frequency (GHz)
VC = 3.3V, VREF = 2.88V, ICQ = 70mA
ACP DATA WITH 54MB/S 64 QAM OFDM
-45.0 -47.5
ACP /(dBc)
ACP 30MHz
SPECTRUM WITH 23DBM 11MB/S CCK
-50.0 -52.5 -55.0 -57.5 -60.0 0 2 4 6 8 10 12 14 16 18 20 22
VC = 3.3V, VREF = 2.88V, ICQ = 70mA, IC = 190mA
Output Power /(dBm)
VC = 3.3V, VREF = 2.88V, ICQ = 70mA
SUPPLY CURRENT WITH 11MB/S CCK
200
11 Mbps CCK Current 3V3
175
Current /(mA)
150
Current / (mA)
C CHARTS
125 100 75 50 0 2 4 6 8 10 12 14 16 18 20 22 24 Output Power /(dBm) VC = 3.3V, VREF = 2.88V, ICQ = 70MA
Copyright (c) 2004 Rev. 1.0d, 2005-08-18
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 4
LX5510B
TM (R)
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
EVALUATION BOARD
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Recommended BOM Value 2.7pF (0402) 2.4pF (0402) 3.9pF (0402) 1F (0603) L1,L2 8.2nH(0402) R1 350 (0402) R2 200 (0402) R3 100 (0402) TL1 30/22 mil (L/W) TL2 100/10 mil (L/W) TL3 60/10 mil (L/W) Substrate 10 mil GETEK Location C1 C2 C3 C4,C5 r =3.9, tan = 0.01 50 Microstrip width: 22 mil
L1 C3 C1 RF Input C5
C4 L2 C2 RF Output
R1 | R2 R3
GND
VC
EVALUATION EVALUATION
VREF
Copyright (c) 2004 Rev. 1.0d, 2005-08-18
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5
LX5510B
TM (R)
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
PACKAGE DIMENSIONS
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LQ
16-Pin MLPQ 3x3
D b E2 L D2
E
or A1 A3 A
e
K
or
Pin 1 Indicator
Dim A A1 A3 b D E e D2 E2 K L L1
MILLIMETERS MIN MAX 0.80 1.00 0 0.05 0.20 REF 0.18 0.30 3.00 BSC 3.00 BSC 0.50 BSC 1.30 1.55 1.30 1.55 0.2 0.35 0.50 0.15
INCHES MIN MAX 0.031 0.039 0 0.002 0.008 REF 0.007 0.012 0.118 BSC 0.118 BSC 0.020 BSC 0.051 0.061 0.051 0.061 0.008 0.012 0.020 0.006
Or
D b E2 L
Note:
1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006") on any side. Lead dimension shall not include solder coverage. Due to multiple qualified assembly sub-contractors either package (with different pin one indicators) may be shipped. Package type will be consistent within the smallest individual container.
2.
E
D2
L1 e A1 A K
MECHANICALS MECHANICALS
Copyright (c) 2004 Rev. 1.0d, 2005-08-18
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 6
LX5510B
TM (R)
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
TAPE AND REEL
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Tape And Reel Specification
O 1.50mm 1.75mm 4.00mm
Top View
5.5 0.05mm
3.30mm 12.00 0.3mm 3.30mm
O 1.50mm 1.10mm
8.00mm
Part Orientation
Side View
0.30mm
2.2mm O 13mm +1.5 -0.2 10.6mm
O 330mm 0.5
O 97mm 1.0
MECHANICALS MECHANICALS
13mm +1.5
Copyright (c) 2004 Rev. 1.0d, 2005-08-18
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 7
LX5510B
TM (R)
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
NOTES
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N NOTES
PRODUCTION DATA - Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time.
Copyright (c) 2004 Rev. 1.0d, 2005-08-18
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 8

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