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| MITSUBISHI IGBT MODULES CM200DU-24F HIGH POWER SWITCHING USE CM200DU-24F IC ................................................................... 200A VCES ......................................................... 1200V Insulated Type 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 93 0.25 14 14 Tc measured point 14 RTC E2 G2 6 (8.25) C2E1 E2 RTC C1 48 0.25 CM G1 E1 6 (18) CIRCUIT DIAGRAM C2E1 E2 C1 25 3-M6 NUTS 4-6. 5 MOUNTING HOLES 25 21.5 2.5 4 18 7 18 7 18 2.8 0.5 15.85 0.5 0.5 0.5 7.5 29 +1.0 -0.5 22 LABEL 8.5 Feb. 2009 4 G1 E1 15 62 E2 G2 MITSUBISHI IGBT MODULES CM200DU-24F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25C Pulse TC = 25C Pulse TC = 25C Conditions Ratings 1200 20 200 400 200 400 830 -40 ~ +150 -40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 Unit V V A A W C C Vrms N*m N*m g (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Test conditions VCE = VCES, VGE = 0V IC = 20mA, VCE = 10V VGE = VGES, VCE = 0V IC = 200A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE = 15V RG = 1.6, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied*2 (1/2 module) Case temperature measured point is just under the chips Tj = 25C Tj = 125C Min. -- 5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 1.6 Limits Typ. -- 6 -- 1.8 1.9 -- -- -- 2200 -- -- -- -- -- 12.2 -- -- -- 0.04 -- -- Max. 1 7 40 2.4 -- 78 3.4 2.0 -- 300 80 500 300 200 -- 3.2 0.15 0.18 -- 0.091*3 16 Unit mA V A V nF nC ns ns C V Contact thermal resistance Thermal resistance External gate resistance K/W Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of = 0.9[W/(m * K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Feb. 2009 2 MITSUBISHI IGBT MODULES CM200DU-24F HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 400 Tj = 25C VGE = 20V 350 300 250 200 15 11 10 9.5 3 VGE = 15V Tj = 25C 2.5 Tj = 125C 2 1.5 1 0.5 0 9 8.5 150 100 8 50 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 100 200 300 400 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT IE (A) 7 5 3 2 5 Tj = 25C Tj = 25C 4 3 IC = 400A 2 IC = 200A IC = 80A 102 7 5 3 2 1 0 6 8 10 12 14 16 18 20 101 0.5 1 1.5 2 2.5 3 3.5 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 td(off) 5 tf 3 2 7 5 3 2 Cies SWITCHING TIMES (ns) td(on) 101 7 5 3 2 102 tr Conditions: VCC = 600V VGE = 15V RG = 1.6 Tj = 125C Inductive load 2 3 5 7 102 2 3 5 7 103 Coes Cres 100 7 5 3 2 101 7 5 3 2 VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 1 10 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM200DU-24F HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j-c) = 0.15K/W 3 FWDi part: 2 Per unit base = Rth(j-c) = 0.18K/W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 103 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) 7 5 3 2 102 7 5 3 2 Irr trr Conditions: VCC = 600V VGE = 15V RG = 1.6 Tj = 25C Inductive load 2 3 5 7 102 2 3 5 7 103 10-1 10-1 7 5 3 2 7 5 3 2 10-2 Single Pulse TC = 25C 10-2 101 1 10 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s) EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) 18 16 14 12 10 8 6 4 2 0 0 IC = 200A VCC = 400V VCC = 600V 500 1000 1500 2000 2500 3000 GATE CHARGE QG (nC) Feb. 2009 4 |
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