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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor DESCRIPTION *Collector-Emitter Breakdown Voltage-- : V(BR)CEO =-60 V *DC Current Gain-- : hFE = 750(Min) @ IC=-2A *Complement to Type MJE801T MJE701T APPLICATIONS *Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE -60 UNIT V Collector Current-Continuous Base Current PC Ti Tstg Collector Power Dissipation TC=25 Junction Temperature Storage Temperature Range w w PARAMETER scs .i w -60 -5 V V -4 A -0.1 50 150 -55~150 A W .cn mi e THERMAL CHARACTERISTICS SYMBOL Rth j-c MAX 2.5 UNIT /W Thermal Resistance, Junction to Case isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MJE701T MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC=-50mA; IB= 0 -60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-2A; IB=-40mA -2.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-4A; IB=-40mA -3.0 V VBE(on)-1 Base-Emitter On Voltage IC=-2A; VCE=-3V -2.5 V VBE(on)-2 Base-Emitter On Voltage IC=-4A; VCE=-3V -3.0 V ICEO Collector Cutoff Current VCE=-60V; IB= 0 B ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain w w scs .i w VCB=-60V; IE= 0 VCB=-60V; IE= 0;TC= 100 VEB=-5V; IC= 0 IC=-2A ; VCE=-3V .cn mi e -0.1 -0.1 -0.5 -2.0 mA mA mA 750 IC=-4A ; VCE=-3V 100 isc Websitewww.iscsemi.cn |
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