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MMBT8050W
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications
Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCEO VCBO VEBO IC Ptot Tj TS Value 25 40 6 600 200 150 - 55 to + 150 Unit V V V mA mW
O
C C
O
Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 100 mA at VCE = 1 V, IC = 500 mA Collector Cutoff Current at VCB = 35 V Collector Saturation Voltage at IC = 500 mA, IB = 50 mA Base Saturation Voltage at IC = 500 mA, IB = 50 mA Collector Emitter Breakdown Voltage at IC = 2 mA Collector Base Breakdown Voltage at IC = 10 A Emitter Base Breakdown Voltage at IE = 100 A Gain Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 50 MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz MMBT8050CW MMBT8050DW Symbol hFE hFE hFE ICBO VCE(sat) VBE(sat) V(BR)CEO V(BR)CBO V(BR)EBO fT CCBO Min. 100 160 40 25 40 6 Typ. 100 12 Max. 250 400 100 0.5 1.2 Unit nA V V V V V MHz pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 11/08/2006
MMBT8050W
C o m m o n e m itt e r c o lle c t o r c h a r a c te r is tic s
C o m m o n e m it te r c o lle c to r c h a r a c te r is tic s
mA 100
0 .3 5
mA 500
0 .9 0 .8 5
80
0 .3
400
IC
60
0 .2 5
IC
0 .2
300
0 .8
40
0 .1 5
200
0 .1
20
I B = 0 .0 5 m A
100
0 .7 5
V B E = 0 .7 V
0 0 10 20V VCE
0 0 1 2V VCE
C o l l e c t o r s a t u r a t io n v o l t a g e v e r s u s c o ll e c t o r c u r r e n t
D C c u r r e n t g a in v e r s u s c o ll e c t o r c u r r e n t
V 0 .5
t y p ic a l lim it s a t T a m b = 2 5o C
1000
700 500 400 300 200
VCE=1V
0 .4
Ic IB
=10
150 C
5o C
o
V C Esat
0 .3
h FE
Ta
mb
=2
100 0 .2
70 50 40
-5 0 o C
0 .1 150 C
o
25 C -5 0 C
o
o
30 20
0 1 0 -1 1 10 10 2 10 3 m A IC
10 1 0 -1
1
10
10 2
10 3 IC
B a s e s a t u r a t i o n v o lt a g e v e r s u s c o ll e c t o r c u r r e n t
C o m m o n e m it t e r c o lle c to r c h a r a c te r is tic s
V 2
ty p ic a l l im it s a t T a m b = 2 5o C Ic IB
mA 500
3 .2
2 .8 2 .4
400
=10
2 1 .8 1 .6
V B E sat IC 1 -5 0 C
25
o
300
1 .4 1 .2
o
1
200
C
0 .8 0 .6
150 C
o
100
I B = 0 .2 m A
0 .4
0 1 0 -1 1 10 10
2
0 10 3 m A IC 0 1 2V VCE
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 11/08/2006

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