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Datasheet File OCR Text: |
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2921 DESCRIPTION With MT-200 package Complement to type 2SA1215 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage PARAMETER Collector-emitter voltage INC Emitter-base voltage Collector current E SEM ANG H TC=25ae Open emitter Open base OND IC CONDITIONS TOR UC VALUE 160 160 5 15 4 150 150 -55~150 UNIT V V V A A W ae ae Open collector Base current Collector power dissipation Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=25mA ; IB=0 IC=5A ;IB=0.5A VCB=160V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IE=-2A ; VCE=12V 50 MIN 160 2SC2921 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE Cob fT TYP. MAX UNIT V 2.0 100 100 |I |I V A A 200 60 pF MHz Switching times ton ts tf Turn-on time Fall time Storage time Y hFE classifications O 50-100 P IN ANG CH 90-180 MIC E SE IC=5A;RL=12| IB1=-IB2=0.5A VCC=60V DUC ON 0.20 1.50 0.35 TOR |I |I s |I s s 70-140 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2921 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2921 CHA IN E SEM NG OND IC TOR UC 4 |
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