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| SMD Type Silicon NPN Epitaxial 2SD1101 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Low Frequency amplifier. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) Rating 25 20 5 0.7 1 150 150 -55 to +150 Unit V V V A A mW PC Tj Tstg Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current DC current gain Collector-emitter saturation voltage Base-emitter voltage Symbol Testconditons Min 25 20 5 1.0 85 240 0.5 1.0 V V Typ Max Unit V V V iA V(BR)CBO IC = 10iA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10iA , IC = 0 ICBO hFE VCB = 20V, IE=0 VCE = 1V , IC = 0.15A VCE(sat) IC = 0.5A , IB = 0.05A VBE VCE = 1V , IC = 0.15A hFE Classification Marking hFE AB 85 170 AC 120 240 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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