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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1105 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) *Wide Area of Safe Operation *High Power and High Reliability APPLICATIONS *Designed for high power AF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB B Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature 30 A PC 200 W Tj 150 Tstg Storage Temperature Range -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1105 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA ; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2 V VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 4V 1.5 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 30 A hFE-1 DC Current Gain IC= 1A ; VCE= 4V 40 hFE-2 DC Current Gain IC= 5A ; VCE= 4V 40 120 fT Current-Gain--Bandwidth Product IC= 0.5A;VCE= 10V 1 MHz hFE-2 Classifications P 40-80 O 60-120 isc Websitewww.iscsemi.cn |
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