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Excelics
* * * * * * *
EFA120B/EFA120BV
DATA SHEET
Low Distortion GaAs Power FET
550
+28.0dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN FOR EFA120B AND 11.5dB FOR EFA120BV AT 12GHz 0.3 X 1200 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY EFA120BV WITH VIA HOLE SOURCE GROUNDING Idss SORTED IN 20mA PER BIN RANGE
50
156
D
D
48
350 100
40
G
G
Chip Thickness: 75 20 microns All Dimensions In Microns
95
50
120
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS MIN P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth Output Power at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression Vds=8V, Ids=50% Idss Saturated Drain Current Transconductance Pinch-off Voltage f=12GHz f=18GHz f=12GHz f=18GHz f=12GHz 200 140 26.0 8.0 TYP 28.0 28.0 9.5 7.0 34 340 180 -2.0 -12 -7 -15 -14 40
: Via Hole No Via Hole For EFA120B EFA120BV
MAX MIN 26.0 10.0 TYP 28.0 28.0 11.5 9.0 36 440 200 140 -3.5 -12 -7 340 180 -2.0 -15 -14 30
o
EFA120B
UNIT
MAX dBm dB % 440 mA mS -3.5 V V V C/W
Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=3.0mA
Drain Breakdown Voltage Igd=1.2mA Source Breakdown Voltage Igs=1.2mA Thermal Resistance (Au-Sn Eutectic Attach)
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS
EFA120B
ABSOLUTE
1
EFA120BV
2
CONTINUOUS 8V -4V 355mA 5mA @ 3dB Compression 150oC -65/150oC 2.8W
ABSOLUTE1 12V -8V Idss 30mA 26dBm 175oC -65/175oC 4.5W
CONTINUOUS2 8V -4V Idss 5mA @ 3dB Compression 150oC -65/150oC 3.8W
Vds Vgs Ids Igsf Pin Tch Tstg Pt
Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation
12V -8V Idss 30mA 26dBm 175 oC -65/175 oC 3.4W
Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EFA120B/EFA120BV
DATA SHEET
Low Distortion GaAs Power FET
EFA120B
P -1d B & P AE v s. V ds
35 30 P -1dB (dB m 25 20 15 10 4 5 6 7 8 9 10 Drain -Source Voltage (V) f = 12 G H z Ids = 50% Idss 60 P out (dB m ) or PAE (% 55 50 45 40 35 30 25 20 PAE (% ) 40 30 P out 20 10 0 -1 0 -5 0 5 10 15 20 25 30 P in (dB m )
P ou t & P AE v s. P in
f = 12 G H z V ds = 8 V, Ids = 50% Idss P AE
S-PARAMETERS EFA120B 8V, 1/2 Idss
FREQ (GHz) 1.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 --- S11 --MAG 0.950 0.911 0.881 0.875 0.873 0.871 0.878 0.883 0.888 0.909 0.916 0.914 0.933 0.923 ANG -67.1 -106.2 -138.8 -153.5 -163.0 -170.7 -180.0 173.1 165.7 162.3 159.4 160.6 161.0 160.0 --- S21 --MAG 8.659 6.163 3.609 2.524 1.949 1.573 1.320 1.105 0.921 0.775 0.648 0.543 0.483 0.419 ANG 139.4 114.7 89.3 72.4 58.5 46.1 32.9 20.5 7.9 -2.9 -14.2 -21.8 -28.9 -34.4 --- S12 --MAG 0.034 0.047 0.054 0.053 0.052 0.047 0.047 0.045 0.045 0.046 0.049 0.054 0.061 0.072 ANG 55.2 36.7 21.6 17.5 14.4 13.8 12.5 13.1 12.7 11.8 12.9 15.6 20.2 24.4 --- S22 --MAG 0.254 0.222 0.212 0.251 0.307 0.370 0.446 0.521 0.583 0.637 0.685 0.715 0.740 0.758 ANG -47.4 -79.6 -106.1 -118.6 -126.7 -134.4 -143.0 -152.2 -162.2 -172.1 177.4 167.3 158.7 152.4
S-PARAMETERS
FREQ (GHz) 1.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0
EFA120BV
--- S11 --MAG 0.937 0.907 0.887 0.888 0.892 0.897 0.904 0.906 0.911 0.917 0.922 0.936 0.941 0.934
8V, 1/2 Idss
--- S21 --ANG MAG 10.367 7.564 4.476 3.096 2.337 1.864 1.553 1.317 1.134 0.975 0.837 0.702 0.603 0.530 ANG 141.1 117.0 90.1 72.9 59.4 47.5 35.8 24.2 12.0 -0.1 -11.7 -21.1 -29.3 -36.6 --- S12 --MAG 0.031 0.046 0.052 0.051 0.050 0.048 0.046 0.044 0.044 0.044 0.041 0.039 0.037 0.034 ANG 55.1 34.4 14.6 5.1 -0.3 -7.0 -11.6 -15.6 -21.1 -25.1 -30.2 -31.4 -31.3 -24.8 --- S22 --MAG 0.290 0.274 0.284 0.327 0.378 0.432 0.483 0.527 0.572 0.618 0.667 0.723 0.774 0.818 ANG -50.6 -82.9 -110.6 -122.1 -129.3 -135.5 -142.6 -150.2 -159.1 -168.5 -177.5 173.1 167.9 165.6
-64.1 -103.9 -140.6 -157.4 -167.0 -173.6 -179.8 174.0 167.5 160.9 155.1 154.0 152.0 149.5
Note: The data included 0.7 mils diameter Au bonding wires; 2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 6 source wires, 7 mils each; no source wires for EFA120BV.

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