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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-3 package *Respectively complement to type MJ4030/4031/4032 *DARLINGTON *High DC current gain APPLICATIONS *For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION MJ4033/4034/4035 Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER MJ4033 VCBO Collector-base voltage MJ4034 MJ4035 MJ4033 VCEO Collector-emitter voltage MJ4034 MJ4035 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 60 80 100 60 80 100 5 16 20 0.5 150 200 -65~200 V A A A W V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER MJ4033 VCEO(SUS) Collector-emitter sustaining voltage MJ4034 MJ4035 VCE(sat)-1 VCE(sat)-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage IC=10A; IB=40mA IC=16A; IB=80mA IC=10A ; VCE=3V VCE=30V; IB=0 ICEO Collector cut-off current VCE=40V; IB=0 VCE=50V; IB=0 IEBO hFE Emitter cut-off current DC current gain VEB=5V; IC=0 IC=10A ; VCE=3V IC=0.1A ;IB=0 CONDITIONS MJ4033/4034/4035 SYMBOL MIN 60 80 100 TYP. MAX UNIT V 2.5 4.0 3.0 V V V 3.0 mA 5.0 1000 mA THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.17 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJ4033/4034/4035 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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