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| 2N3904/MMBT3904/PZT3904 2N3904 MMBT3904 C PZT3904 C E C B E C TO-92 E SOT-23 Mark: 1A B SOT-223 B NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 40 60 6.0 200 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N3904 625 5.0 83.3 200 Max *MMBT3904 350 2.8 357 **PZT3904 1,000 8.0 125 Units mW mW/C C/W C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. Web Site: WWW.PS-PFS.COM 2N3904/MMBT3904/PZT3904 NPN General Purpose Amplifier Electrical Characteristics Symbol Parameter (continued) TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current IC = 1.0 mA, IB = 0 IC = 10 A, IE = 0 IE = 10 A, IC = 0 VCE = 30 V, VEB = 3V VCE = 30 V, VEB = 3V 40 60 6.0 50 50 V V V nA nA ON CHARACTERISTICS* hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 40 70 100 60 30 300 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 0.65 0.2 0.3 0.85 0.95 V V V V SMALL SIGNAL CHARACTERISTICS fT Cobo Cibo NF Current Gain - Bandwidth Product Output Capacitance Input Capacitance Noise Figure IC = 10 mA, VCE = 20 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz IC = 100 A, VCE = 5.0 V, RS =1.0k,f=10 Hz to 15.7kHz 300 4.0 8.0 5.0 MHz pF pF dB SWITCHING CHARACTERISTICS td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 3.0 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1.0 mA VCC = 3.0 V, IC = 10mA IB1 = IB2 = 1.0 mA 35 35 200 50 ns ns ns ns *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Spice Model NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10) Web Site: WWW.PS-PFS.COM 2N3904/MMBT3904/PZT3904 NPN General Purpose Amplifier (continued) Typical Characteristics VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN Typical Pulsed Current Gain vs Collector Current 500 400 125 C Collector-Emitter Saturation Voltage vs Collector Current 0.15 = 10 125 C V CE = 5V 300 25 C 0.1 25 C 200 100 0 0.1 - 40 C 0.05 - 40 C 1 10 I C - COLLECTOR CURRENT (mA) 100 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 V BE(ON) BASE-EMITTER ON VOLTAGE (V) VBESAT- BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 = 10 Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8 - 40 C 25 C 0.8 - 40 C 25 C 0.6 125 C 0.6 125 C 0.4 0.4 0.1 IC 1 10 - COLLECTOR CURRENT (mA) 100 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 Collector-Cutoff Current vs Ambient Temperature ICBO- COLLECTOR CURRENT (nA) 500 CAPACITANCE (pF) 10 Capacitance vs Reverse Bias Voltage f = 1.0 MHz 100 10 1 0.1 VCB = 30V 5 4 3 2 C obo C ibo 25 50 75 100 125 TA - AMBIENT TEMPERATURE ( C) 150 1 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 Web Site: WWW.PS-PFS.COM 2N3904/MMBT3904/PZT3904 NPN General Purpose Amplifier (continued) Typical Characteristics 12 NF - NOISE FIGURE (dB) 10 8 6 4 2 0 0.1 I C = 1.0 mA R S = 200 I C = 50 A R S = 1.0 k I C = 0.5 mA R S = 200 (continued) Noise Figure vs Frequency V CE = 5.0V NF - NOISE FIGURE (dB) Noise Figure vs Source Resistance 12 I C = 1.0 mA 10 I C = 5.0 mA 8 6 4 2 0 0.1 I C = 50 A I C = 100 A I C = 100 A, R S = 500 1 10 f - FREQUENCY (kHz) 100 1 10 R S - SOURCE RESISTANCE ( k ) 100 Current Gain and Phase Angle vs Frequency 50 45 40 35 30 25 20 15 10 5 0 h fe PD - POWER DISSIPATION (W) Power Dissipation vs Ambient Temperature 0 20 40 60 80 100 120 140 160 180 1000 1 - CURRENT GAIN (dB) SOT-223 0.75 - DEGREES TO-92 0.5 SOT-23 0.25 h V CE = 40V I C = 10 mA 1 10 100 f - FREQUENCY (MHz) fe 0 0 25 50 75 100 TEMPERATURE (o C) 125 150 Turn-On Time vs Collector Current 500 I B1 = I B2 = 40V TIME (nS) 100 15V t r @ V CC = 3.0V 2.0V 10 t d @ VCB = 0V 5 1 10 I C - COLLECTOR CURRENT (mA) 100 Ic 10 Rise Time vs Collector Current 500 VCC = 40V t r - RISE TIME (ns) I B1 = I B2 = Ic 10 100 T J = 125C T J = 25C 10 5 1 10 I C - COLLECTOR CURRENT (mA) 100 Web Site: WWW.PS-PFS.COM 2N3904/MMBT3904/PZT3904 NPN General Purpose Amplifier (continued) Typical Characteristics 500 t S - STORAGE TIME (ns) T J = 25C (continued) Storage Time vs Collector Current I B1 = I B2 = Ic 10 Fall Time vs Collector Current 500 I B1 = I B2 = t f - FALL TIME (ns) T J = 125C Ic 10 VCC = 40V 100 T J = 125C 100 T J = 25C 10 5 1 10 I C - COLLECTOR CURRENT (mA) 100 10 5 1 10 I C - COLLECTOR CURRENT (mA) 100 Current Gain V CE = 10 V f = 1.0 kHz T A = 25oC h oe - OUTPUT ADMITTANCE ( mhos) 500 100 Output Admittance V CE = 10 V f = 1.0 kHz T A = 25oC h fe - CURRENT GAIN 100 10 10 0.1 1 I C - COLLECTOR CURRENT (mA) 10 1 0.1 1 I C - COLLECTOR CURRENT (mA) 10 h re - VOLTAGE FEEDBACK RATIO (x10 100 h ie - INPUT IMPEDANCE (k ) _4 ) Input Impedance V CE = 10 V f = 1.0 kHz T A = 25oC Voltage Feedback Ratio 10 7 5 4 3 2 V CE = 10 V f = 1.0 kHz T A = 25oC 10 1 0.1 0.1 1 I C - COLLECTOR CURRENT (mA) 10 1 0.1 1 I C - COLLECTOR CURRENT (mA) 10 Web Site: WWW.PS-PFS.COM 2N3904/MMBT3904/PZT3904 NPN General Purpose Amplifier (continued) Test Circuits 300 ns 10.6 V Duty Cycle = 2% 0 - 0.5 V < 1.0 ns 10 K 3.0 V 275 C1 < 4.0 pF FIGURE 1: Delay and Rise Time Equivalent Test Circuit 3.0 V 10 < t1 < 500 s t1 10.9 V 275 Duty Cycle = 2% 0 10 K C1 < 4.0 pF - 9.1 V < 1.0 ns 1N916 FIGURE 2: Storage and Fall Time Equivalent Test Circuit Web Site: WWW.PS-PFS.COM |
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