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N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HA44 T stg Tj PC VCBO VCEO HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Storage Temperature - Junction Temperature - - - - Collector Dissipation- Collector-Base Voltage- Collector-Emitter Voltage- Emitter-Base Voltage Collector Current - - --- - - - ---- -- - - - - Ta=25ae(c) -55~150ae 150ae 625mW 500V 400V - 6V 300mA TO-92 1D Emitter E 2D Base B 3D Collector C V EB O IC ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter-Base Cut-off Current Collector Cut-off Current Ta=25ae(c) Typ Max Unit Test Conditions Symbol Min BVCBO BVCEO BVEBO ICBO IEBO ICES HFE HFE HFE HFE 1(c) 2(c) 3(c) 4(c) 500 400 6 100 100 500 40 60 45 40 300 V V V nA nA nA IC=100|I IE=100|I A, IE=0 A IC=0 IC=1mA, IB =0 VCB=400V, IE=0 VEB=4V, IC=0 VCE=-400V, VBE=0 VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA DC Current Gain VCE(sat1) VCE(sat2) VCE(sat3) VBE(sat) Cob Collector- Emitter Saturation Voltage 0.4 0.5 0.75 V V V V pF IC=1mA, IB=0.1mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA VCB=20V, IE=0 F=1MHz Base-Emitter Saturation Voltage Output Capacitance 7 0.75 |
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