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APT58M50JU2
ISOTOP(R) Boost chopper
MOSFET Power Module VDSS = 500V RDSon = 65m Max @ Tj = 25C ID = 58A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction * Brake switch Features
G
K
D
*
S
* * *
Power MOS 8TM MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged ISOTOP(R) Package (SOT-227) Very low stray inductance High level of integration
S D
K
Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
G
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25C Tc = 80C Max ratings 500 58 43 270 30 65 543 42 Unit V A V m W A
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
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APT58M50JU2 - Rev 0 December, 2007
APT58M50JU2
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions Tj = 25C VDS = 500V VGS = 0V Tj = 125C VGS = 10V, ID = 42A VGS = VDS, ID = 2.5mA VGS = 30 V Min Typ Max 250 1000 65 5 100 Unit A m V nA
3
4
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 42A Resistive switching @ 25C VGS = 15V VBus = 333V ID = 42A RG = 2.2 Min Typ 10800 1164 148 340 75 155 60 70 155 50 ns nC Max Unit pF
Chopper diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 30A IF = 60A IF = 30A IF = 30A VR = 400V
di/dt =200A/s
Test Conditions VR=600V Tj = 25C Tj = 125C Tc = 90C
Min 600
Typ
Max 25 500
Unit V A A
Reverse Recovery Time Reverse Recovery Charge
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
30 1.8 2.2 1.5 25 160 35 480
2.2 V
ns nC
Thermal and package characteristics
Symbol Characteristic RthJC RthJA VISOL TJ,TSTG TL Torque Wt Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min Mosfet Diode 2500 -40
Typ
C/W V
Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight
150 300 1.5 29.2
C N.m g
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APT58M50JU2 - Rev 0 December, 2007
Max 0.23 1.05 20
Unit
APT58M50JU2
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
Cathode
Drain
* Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal.
Source
Dimensions in Millimeters and (Inches)
Gate
Typical Mosfet Performance Curve
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.25 Thermal Impedance (C/W)
0.9
0.2
0.7
0.15
0.5
0.1
0.3
0.05
0.1
0 0.00001
0.05
Single P ulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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APT58M50JU2 - Rev 0 December, 2007
APT58M50JU2
250 ID, Drain Current (A) 200 150 100 50 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) RDSon, Drain to Source ON resistance Normalized RDSon vs. Temperature 2.5 ID, Drain Current (A)
VGS=10V ID=42A
Low Voltage Output Characteristics
VGS=10V TJ=25C
Low Voltage Output Characteristics 160 140 ID, Drain Current (A) 120 100 80 60 40 20 0 0 5 10 15 20 25 30 VDS, Drain to Source Voltage (V) Transfert Characteristics 125 100 75 50 25
TJ=25C VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle TJ=125C TJ=125C 5.5V 6V VGS=7,8 &10V 6.5V
TJ=125C
2 1.5 1 0.5 25 50 75 100 125 150
0 0 1 2 3 4 5 6 7
TJ, Junction Temperature (C)
Gate Charge vs Gate to Source 12 VGS, Gate to Source Voltage 10 8 6 4 2 0 0 60 120 180 240 300 360 Gate Charge (nC) 10 0
VDS=400V ID=42A TJ=25C VDS=100V
VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF)
Ciss
VDS=250V
10000
1000
Coss Crss
100
50
100
150
200
VDS, Drain to Source Voltage (V)
APT58M50JU2 - Rev 0 December, 2007
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4-5
APT58M50JU2
Typical Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 Thermal Impedance (C/W) 1 0.8 0.6 0.4 0.2 0 0.00001 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage 120 trr, Reverse Recovery Time (ns) IF, Forward Current (A) 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF, Anode to Cathode Voltage (V) QRR vs. Current Rate Charge
TJ=125C VR=400V TJ=25C TJ=125C
Trr vs. Current Rate of Charge 175 150 125
60 A TJ=125C VR=400V
100
30 A
75
15 A
50 0 200 400 600 800 1000 1200 -diF/dt (A/s) IRRM vs. Current Rate of Charge
QRR, Reverse Recovery Charge (C)
IRRM, Reverse Recovery Current (A)
1.5
60 A
30 25 20 15 10 5 0 0 200 400 600 800 1000 1200 -diF/dt (A/s)
TJ=125C VR=400V 60 A 30 A 15 A
1.0
30 A 15 A
0.5
0.0 0 200 400 600 800 1000 1200 -diF/dt (A/s)
Capacitance vs. Reverse Voltage 200 175 C, Capacitance (pF) 150 125 100 75 50 25 0 1 10 100 1000 VR, Reverse Voltage (V)
Max. Average Forward Current vs. Case Temp. 50 40 IF(AV) (A) 30 20 10 0 25 50 75 100 125 150 175 Case Temperature (C)
Duty Cycle = 0.5 TJ=175C
ISOTOP(R) is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APT58M50JU2 - Rev 0 December, 2007

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