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| BCX56 NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 MAXIMUM RATINGS ( TA=25C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Symbol VCBO VCEO VEBO IC PD TJ Tstg Value 100 80 5.0 1.0 500 +150 -55 to +150 Unit V V V A mW C C Total Device Dissipation TA=25C Junction Temperature Range Storage Temperature Range Device Marking BCX56=BH , BCX56-10=BK , BCX56-16=BL OFF CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage, IC = 100A, I E = 0 Collector-Emitter Breakdown Voltage, IC = 10mA, I B = 0 Emitter-Base Breakdown Voltage, IE = 10A, IC = 0 Collector Cut-off Current, VCB = 30V, I E = 0 Emitter Cut-off Current, VEB = 5.0V, I C = 0 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min - Max 100 80 5.0 0.1 0.1 Unit V V V A A W E IT R O N h t t p : / / w w w . w e i t r o n . c o m . tw 1/3 15-Feb-06 BCX56 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain VCE = 2.0V, IC = 150mA BCX56 BCX56-10 BCX56-16 hFE1 63 63 100 40 25 250 160 250 0.5 1.0 V V MHz - VCE = 2.0V, IC = 5.0mA VCE = 2.0V, IC = 500mA Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA Base-Emitter Voltage VCE = 2.0V, IC = 500mA TransitionFrequence VCE = 5V, IC = 1mA, f = 100MHz hFE2 hFE3 VCE(sat) VBE(ON) fT 130 WEITRON http://www.weitron.com.tw 2/3 15-Feb-06 BCX56 SOT-89 Outline Dimensions unit:mm E G A J C H K L B D Dim A B C D E G H J K L SOT-89 Min Max 1.600 1.400 0.520 0.320 0.560 0.360 0.440 0.350 4.600 4.400 1.800 1.400 2.600 2.300 4.250 3.940 1.500TYP 3.100 2.900 WEITRON http://www.weitron.com.tw 3/3 15-Feb-06 |
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