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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD725 DESCRIPTION With TO-3 package High voltage ,high speed Low collector saturation voltage APPLICATIONS For high voltage,power switching and TV horizontal output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 1500 600 5 7 TC=25ae 50 150 -65~150 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Open collector UNIT V V V A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SD725 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 600 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=5 A;IB=1 A 5.0 V VBEsat Base-emitter saturation voltage IC=5 A;IB=1 A 1.5 V ICBO Collector cut-off current VCB=800V;IE=0 10 |I A IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 hFE-2 TOR NDU ICO E SEM ANG INCH DC current gain IC=1A ; VCE=5V 8 36 DC current gain IC=5A ; VCE=5V 5 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD725 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 |
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