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| SSF7509 Feathers: Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF7509 is a new generation of middle voltage and high current N-Channel enhancement mode trench power MOSFET. This new technology increases the cell density and reduces the on-resistance; its typical Rdson can reduce to 6.2mohm. Application: Power switching application SSF7509 TOP View (TO220) Absolute Maximum Ratings Parameter ID@Tc=25 C ID@Tc=100C IDM PD@TC=25C VGS dv/dt EAS EAR TJ TSTG Thermal Resistance Parameter RJC RJA Junction-to-case Junction-to-ambient Parameter BVDSS RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Forward transconductance Drain-to-Source leakage current Gate-to-Source forward leakage 2008.8.1 ID=80A BV=80V Rdson=8mohm Max. 80 72 320 165 2.0 20 31 500 TBD -55 to +150 Units A W W/ C V v/ns mJ Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current Power dissipation Linear derating factor Gate-to-Source voltage Peak diode recovery voltage Single pulse avalanche energy Repetitive avalanche energy Operating Junction and Storage Temperature Range C Min. -- -- Min. 80 -- 2.0 -- -- -- 58 -- -- -- Typ. -- Typ. 0.75 -- Max. -- 62 Units C/W Electrical Characteristics @TJ=25 C(unless otherwise specified) Max. Units -- 4.0 -- 2 10 100 A nA V V S Test Conditions VGS=0V,ID=250A VGS=10V,ID=40A VDS=VGS,ID=250A VDS=5V,ID=30A VDS=80V,VGS=0V VDS=80V, VGS=0V,TJ=150C VGS=20V page 1of5 0.0067 0.008 (c)Silikron Semiconductor CO.,LTD. Version : 1.0 SSF7509 Gate-to-Source reverse leakage Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance -- -- -- -- -- -- -- -- -- -- -- -- 100 18 28 20 17.8 76.8 15.7 3200 330 260 -100 -- -- -- -- -- -- -- -- -- -- nS VGS=-20V ID=30A nC VDD=30V VGS=10V VDD=30V ID=2A ,RL=15 RG=2.5 VGS=10V VGS=0V pF VDS=25V f=1.0MHZ Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-on Time . . Min. -- -- -- Typ. -- -- -- 57 108 Max. 80 A 320 1.3 -- -- V nS nC Units showing the integral reverse p-n junction diode. TJ=25C,IS=40A,VGS=0V TJ=25C,IF=75A di/dt=100A/s Test Conditions MOSFET symbol Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: Repetitive rating; pulse width limited by max junction temperature. Test condition: L =0.3mH, ID = 57A, VDD = 47V Pulse width300S; duty cycle1.5% RG = 25Starting TJ = 25C EAS test circuits: BVdss Gate charge test circuit: (c)Silikron Semiconductor CO.,LTD. 2008.8.1 Version : 1.0 page 2of5 SSF7509 Switch Time Test Circuit Switch Waveforms: Transfer Characteristic Capacitance On Resistance vs Junction Temperature Breakdown Voltage vs Junction Temperature (c)Silikron Semiconductor CO.,LTD. 2008.8.1 Version : 1.0 page 3of5 SSF7509 Gate Charge Source-Drain Diode Forward Voltage Safe Operation Area Max Drain Current vs Junction Temperature Transient Thermal Impedance Curve (c)Silikron Semiconductor CO.,LTD. 2008.8.1 Version : 1.0 page 4of5 SSF7509 TO220 MECHANICAL DATA: (c)Silikron Semiconductor CO.,LTD. 2008.8.1 Version : 1.0 page 5of5 |
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