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| Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 General Description The AP2129 is a 300mA, positive Voltage regulator ICs fabricated by CMOS process. The AP2129 provides two kinds of output voltage operation modes for setting the output voltage. Fixed output voltage mode senses the output voltage on VOUT, adjustable output voltage mode needs two resistors as a voltage divider The AP2129 Series have features of low dropout voltage, low noise, high output voltage accuracy, and low current consumption which make them ideal for use in various battery-powered devices. AP2129 has 1.0V, 1.2V, 3.3V fixed voltage version and 0.8V to 4.5V adjustable voltage version. AP2129 series are available in SOT-23-5 Package. Features * * * * * * * * * * * * Wide Operating Voltage: 1.8V to 6V High Output Voltage Accuracy: 2% High Ripple Rejection: 65dB@ f=1kHz, 45dB@ f=10kHz Low Standby Current: 0.1A Low Quiescent Current: 60A Typical Low Output Noise: 60Vrms Short Current Limit: 50mA Over Temperature Protection Compatible with Low ESR Ceramic Capacitor: 1F for CIN and COUT Excellent Line/Load Regulation Soft Start Time: 50s Auto Discharge Resistance: RDS(ON)=60 Applications * * * Datacom Notebook Computers Mother Board SOT-23-5 Figure 1. Package Type of AP2129 Oct. 2009 Rev. 1.1 1 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Pin Configuration K Package (SOT-23-5) Shutdown GND VIN 1 2 3 5 ADJ/NC 4 VOUT Figure 2. Pin Configuration of AP2129 (Top View) Functional Block Diagram SHUTDOWN UVLO & Shutdown Logic VIN Thermal Shutdown Foldback Current Limit VOUT 3M NC VREF GND Oct. 2009 Rev. 1.1 2 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Functional Block Diagram (Continued) SHUTDOWN UVLO & Shutdown Logic VIN Thermal Shutdown Foldback Current Limit VOUT 3M ADJ VREF GND Figure 3. Functional Block Diagram of AP2129 Oct. 2009 Rev. 1.1 3 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Ordering Information AP2129 Circuit Type G1: Green TR: Tape and Reel Package K: SOT-23-5 ADJ: ADJ Output 1.0: Fixed Output 1.0V 1.2: Fixed Output 1.2V 3.3: Fixed Output 3.3V Product Package Temperature Range Part Number AP2129K- ADJTRG1 Marking ID Packing Type GEJ GEK GEL GEM Tape & Reel Tape & Reel Tape & Reel Tape & Reel AP2129 SOT-23-5 -40 to 85oC AP2129K-1.0TRG1 AP2129K-1.2TRG1 AP2129K-3.3TRG1 BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. Oct. 2009 Rev. 1.1 4 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Absolute Maximum Ratings (Note 1) Parameter Input Voltage Shutdown Input Voltage Output Current Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10sec) Thermal Resistance ESD (Human Body Model) ESD (Machine Model) Symbol VIN VCE IOUT TJ TSTG TLEAD JA ESD ESD Value 6.5 -0.3 to VIN+0.3 450 150 -65 to 150 260 250 6000 200 Unit V V mA oC oC o C oC/W V V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Input Voltage Operating Junction Temperature Range Symbol VIN TJ Min 1.8 -40 Max 6 85 Unit V oC Oct. 2009 Rev. 1.1 5 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Electrical Characteristics AP2129-1.0/1.2/3.3 Electrical Characteristics Parameter Output Voltage Input Voltage Maximum Output Current Load Regulation Line Regulation Symbol VOUT VIN IOUT(MAX) VOUT /(IOUT*VOUT) VOUT /(VIN*VOUT) VDROP IQ ISTD (CIN=1F, COUT=1F, Bold typeface applies over -40oCTJ85oC, unless otherwise specified. Conditions VIN=VOUT+1V, (Note 2) 1mAIOUT300mA Min 98%* VOUT 1.8 450 VIN-VOUT=1V, (Note 2) 1mAIOUT300mA VOUT+0.5VVIN6V, (Note 2) IOUT=30mA VOUT=1.0V, IOUT=300mA Dropout Voltage Quiescent Current Standby Current Power Supply Rejection Ratio Output Voltage Temperature Coefficient Output Current Limit Short Current Limit Soft Start Time RMS Output Noise Shutdown "High" Voltage Shutdown "Low" Voltage VOUT Discharge MOSFET RDS(ON) Shutdown Pull Down Resistance Thermal Shutdown Thermal Shutdown Hysteresis Thermal Resistance JC SOT-23-5 VOUT=1.2V, IOUT=300mA VOUT=3.3V, IOUT=300mA VIN=VOUT+1V, IOUT=0mA VIN=VOUT+1V, VSHUTDOWN in off mode Ripple 1Vp-p VIN=VOUT+1V f=100Hz f=1KHz f=10KHz 1400 1200 170 60 0.1 65 65 45 0.6 0.06 1500 1300 300 90 1.0 A A dB dB dB ppm/oC mA mA s Vrms 6 0.4 60 3 165 30 150 o Typ Max 102%* VOUT 6 Unit V V mA %/A %/V mV PSRR (VOUT/VOUT) /T ILIMIT ISHORT tUP VNOISE IOUT=30mA, -40oCTJ85oC VIN-VOUT=1V, VOUT=0.98*VOUT VOUT=0V TA=25oC, 10Hz f100kHz Shutdown input voltage "High" Shutdown input voltage "Low" Shutdown input voltage "Low" 1.5 0 100 400 50 50 60 V V M o C oC C/W Note 2: VIN=1.8V for 1.0 and 1.2 version Oct. 2009 Rev. 1.1 6 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Electrical Characteristics (Continued) AP2129-ADJ Electrical Characteristics (CIN=1F, COUT=1F, Bold typeface applies over -40oCTJ85oC, unless otherwise specified.) Parameter Reference Voltage Input Voltage Maximum Output Current Load Regulation Line Regulation Quiescent Current Standby Current Symbol VREF VIN IOUT(MAX) VOUT /(IOUT*VOUT) VOUT /(VIN*VOUT) IQ ISTD VIN-VOUT=1V, 1mAIOUT300mA VOUT+0.5VVIN6V IOUT=30mA VIN=VOUT+1V, IOUT=0mA VIN=VOUT+1V, VSHUTDOWN in off mode f=100Hz Power Supply Rejection Ratio Output Voltage Temperature Coefficient Output Current Limit Short Current Limit Soft Start Time RMS Output Noise Shutdown "High" Voltage Shutdown "Low" Voltage VOUT Discharge MOSFET RDS(ON) Shutdown Pull Down Resistance Thermal Shutdown Thermal Shutdown Hysteresis Thermal Resistance JC SOT-23-5 PSRR Ripple 1Vp-p VIN=VOUT+1V f=1KHz f=10KHz (VOUT/VOUT) /T ILIMIT ISHORT tUP VNOISE TA=25 C, 10Hz f100kHz Shutdown input voltage "High" Shutdown input voltage "Low" Shutdown input voltage "Low" 1.5 0 60 3 165 30 150 o Conditions VIN=1.8V 1mAIOUT300mA Min 0.748 1.8 Typ 0.8 Max 0.816 6 Unit V V mA 450 0.6 0.06 60 0.1 65 65 45 90 1.0 %/A %/V A A dB dB dB ppm/oC mA mA IOUT=30mA, -40oCTJ85oC 100 400 VOUT=0V 50 50 60 6 0.4 s Vrms V V M o o C C oC/W Oct. 2009 Rev. 1.1 7 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Typical Performance Characteristics 100 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 90 80 70 VOUT=0.8V No Load Tc=25 C o Output Voltage (V) Supply Current(A) 500 60 50 40 30 20 10 0 0.0 T C=-40 C o T C=25 C o T C=125 C VIN=4.4V 0 50 100 150 200 250 300 350 400 450 o 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Output Current (mA) Input Voltage(V) Figure 4. Output Voltage vs. Output Current Figure 5. Supply Current vs. input Current 120 110 100 60 VOUT=0.8V VIN=1.8V TC=25 C Supply Current(A) o 58 56 54 VOUT=0.8V VIN=1.8V No Load Supply Current (A) 90 80 70 60 50 40 0.00 52 50 48 46 44 42 0.03 0.06 0.09 0.12 0.15 0.18 0.21 0.24 0.27 0.30 40 -40 -20 0 20 40 o 60 80 Output Current(A) Case Temperature( C) Figure 6. Supply Current vs. Output Current Figure 7. Supply Current vs. Case Temperature Oct. 2009 Rev. 1.1 8 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Typical Performance Characteristics (Continued) 0.90 320 280 240 VOUT=0.8V VIN=1.8V Ouput short to GND Output Voltage(V) 0.88 0.86 0.84 0.82 0.80 0.78 0.76 0.74 IO=10mA IO=150mA VOUT=0.8V VIN=1.8V Short Current (mA) 200 160 120 80 40 0 0.72 -30 -15 0 15 30 o 45 60 75 0.70 -30 -15 0 15 30 o 45 60 75 Case Temperature( C) Case Temperature( C) Figure 8. Shot Output vs. Case Temperature Figure 9. Output Voltage vs. Case Temperature 1.0 0.9 0.8 0.7 1.0 0.9 0.8 0.7 Output Voltage (V) 0.6 0.5 0.4 0.3 0.2 0.1 Output Voltage (V) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 TC=-40 C TC=125 C TC=25 C VOUT=0.8V VIN=1.8V o o o TC=-40 C TC=25 C TC=125 C VOUT=0.8V No Load 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 o o o 0.0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 Output Current(A) Input Voltage(V) Figure 10. Output Voltage vs. Output Current Figure 11. Output Voltage vs. Input Voltage Oct. 2009 Rev. 1.1 9 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Typical Performance Characteristics (Continued) 1.0 0.9 0.8 Output Voltge (V) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 IOUT TC=-40 C TC=25 C TC=85 C VOUT=0.8V 0 1 2 3 4 5 6 o o o VOUT Input Voltage (V) Figure 12. Output Voltage vs. Input Voltage (IOUT=300mA) Figure 13. Load Transient (Conditions: CIN=COUT=1F, VIN=2.5V, VOUT=0.8V) IOUT VIN VOUT VOUT Figure 14. Load Transient (Conditions: CIN=COUT=1F, VIN=4.4V, VOUT=3.3V) Figure 15. Line Transient (Conditions: IOUT=30mA, CIN=COUT=1F, VIN=2.5 to 3.5V, VOUT=0.8V) Oct. 2009 Rev. 1.1 10 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Typical Performance Characteristics (Continued) VIN VOUT VShutdown VOUT Figure 16. Line Transient (Conditions: IOUT=30mA, CIN=COUT=1F, VIN=4 to 5V, VOUT=3.3V) Figure 17. Soft Start Time (Conditions: IOUT=0mA, CIN=COUT=1F, VShutdown=0 to 2V, VOUT=3.3V) 100 90 80 70 IOUT=10mA IOUT=300mA ripple=1Vpp, COUT=1F, VOUT=0.8V VOUT VShutdown PSRR (dB) 60 50 40 30 20 10 0 100 1000 10000 100000 Frequency (Hz) Figure 18. Soft Start Time (Conditions: IOUT=0mA, CIN=COUT=1F, VShutdown=0 to 2V, VOUT=0.8V) Figure 19. PSSR vs. Frequency Oct. 2009 Rev. 1.1 11 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Typical Performance Characteristics (Continued) 100 90 80 70 2.0 IOUT=10mA 1.8 1.6 VOUT=0.8V No heatsink IOUT=300mA ripple=1Vpp, COUT=1F, VOUT=3.3V PSRR (dB) 60 50 40 30 20 10 0 100 1000 10000 100000 Power Dissipation (W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 -20 0 20 40 60 o 80 100 120 Frequency (Hz) Case Temperature( C) Figure 20. PSRR vs. Frequency Figure 21. Power Dissipation vs. Case Temperature Oct. 2009 Rev. 1.1 12 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Typical Application VIN VOUT VIN VOUT AP2129 Shutdown ADJ R1 COUT 1F CIN 1F R2 GND VOUT=0.8*(1+R1/R2) V VIN VOUT VIN VOUT AP2129 Shutdown CIN 1F COUT 1F GND VOUT=1.0V, 1.2V, 3.3V Figure 22. Typical Application of AP2129 Oct. 2009 Rev. 1.1 13 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Mechanical Dimensions SOT-23-5 Unit: mm(inch) 2.820(0.111) 3.020(0.119) 0.100(0.004) 0.200(0.008) 2.950(0.116) 2.650(0.104) 1.500(0.059) 1.700(0.067) 0.200(0.008) 0.700(0.028) REF 0.950(0.037) TYP 0.300(0.012) 0.400(0.016) 1.800(0.071) 2.000(0.079) 0.300(0.012) 0.600(0.024) 0 8 1.450(0.057) MAX 0.000(0.000) 0.100(0.004) 0.900(0.035) 1.300(0.051) Oct. 2009 Rev. 1.1 14 BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifiBCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. other rights nor the rights of others. MAIN SITE MAIN SITE - Headquarters BCD Semiconductor Manufacturing Limited - Wafer Fab BCD Semiconductor Manufacturing Limited Shanghai Design Group - IC SIM-BCD Semiconductor Manufacturing Co., Ltd. 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 900, Yi Shan Road, Shanghai 200233, China 8F, Zone B, 1491, Fax: +86-21-5450 0008 Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 USA Office BCD Semiconductor Corp. USA Office 30920 Huntwood Ave. Hayward, BCD Semiconductor Corporation CA 94544, USA 30920 Huntwood Ave. Hayward, Tel 94544, U.S.A CA : +1-510-324-2988 Fax: +1-510-324-2788 Tel : +1-510-324-2988 Fax: +1-510-324-2788 REGIONAL SALES OFFICE Shenzhen Office REGIONAL SALES OFFICE BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Limited Tel: +86-21-24162266, Fax: +86-21-24162277 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 Taiwan Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Office (Taiwan) Company Limited Semiconductor Shenzhen Office Room E, SIM-BCD Semiconductor 3rd Fuzhong Road, Futian District, Shenzhen, 4F, 298-1, Rui Guang Road,(Taiwan) Company Limited Shanghai 5F, Noble Center, No.1006,Manufacturing Co., Ltd. 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