 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| CHENMKO ENTERPRISE CO.,LTD CHM2316QPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CURRENT 6 Ampere FEATURE * Small flat package. (SC-74/SOT-457) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. 1.7~2.1 (1) (6) 0.95 0.95 (3) 0.25~0.5 1.4~1.8 (4) SC-74/SOT-457 2.7~3.1 CONSTRUCTION * N-Channel Enhancement 0.08~0.2 0.3~0.6 4 0.935~1.3 0~0.15 2.6~3.0 CIRCUIT 6 D D S 1 D D G 3 Dimensions in millimeters SC-74/SOT-457 Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted CHM2316QPT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous 30 V V 20 6.0 ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range (Note 3) A 24 2000 -55 to 150 -55 to 150 mW C C Note : 1. Surface Mounted on FR4 Board , t <=5sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 62.5 C/W 2006-08 RATING CHARACTERISTIC CURVES ( CHM2316QPT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = 250 A VDS = 30 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V 30 1 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 A VGS=10V, ID=6.0A VGS=4.5V, ID=4.9A 1 27 36 8.0 3 34 V m 50 S Forward Transconductance VDS =15V, ID = 6.0A SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q tr toff tf gd Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=15V, ID=6.0A VGS=10V V DD= 15V ID = 5.5A , VGS = 10 V RGEN= 3 12.3 1.5 2.5 9 3 24 4 16 nC ton 20 8 50 10 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current (Note 1) (Note 2) 1.7 1.2 A V Drain-Source Diode Forward Voltage IS = 1.7A , VGS = 0 V RATING CHARACTERISTIC CURVES ( CHM2316QPT ) Typical Electrical Characteristics Figure 1. Output Characteristics 40 40 Figure 2. Transfer Characteristics VG S =10 , 9 , 8 , 7 , 6 V I D , DRAIN CURRENT (A) 30 VG S =5 . 0 V TJ=25C I D , DRAIN CURRENT (A) 30 20 20 TJ=-55C VG S =4 . 0 V 10 10 VG S =3 . 0 V 0 0 1.0 3.0 4.0 2.0 V DS , DRAIN-TO-SOURCE VOLTAGE (V) 5.0 0 0 1.0 TJ=125C 2.0 3.0 4.0 5.0 6.0 VGS , GATE-TO-SOURCE VOLTAGE (V) Figure 3. Gate Charge 10 VDS=15V ID=6A 2.2 Figure 4. On-Resistance Variation with Temperature VGS=10V ID=6A 1.9 VGS , GATE TO SOURCE VOLTAGE (V) DRAIN-SOURCE ON-RESISTANCE 8 R DS(on) , NO RMALIZED 1.6 6 1.3 4 1.0 2 0.7 0 0 3 6 9 Qg , TOTAL GATE CHARGE (nC) 12 15 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (C) 150 200 Figure 5. Gate Threshold Variation with Temperature 1.3 1.2 VDS=VGS ID=250uA Vth , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (C) 125 150 |
Price & Availability of CHM2316QPT
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |