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EMA205B
9-16 GHz Medium Power MMIC
FEATURES
* * * * * * * * 9-16 GHz BANDWIDTH +18.0 dBm TYPICAL OUTPUT POWER 14 dB 1.5 dB TYPICAL POWER GAIN TWO SECTION, DISTRIBUTED AMPLIFIER DUAL BIAS SUPPLY 0.3 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY
APPLICATIONS
* * * Analog and Digital Wireless Systems Military Applications C-Band Terrestrial Radio Caution! ESD sensitive device.
Chip Size 1060 x 2000 microns Chip Thickness: 75 13 microns All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (Ta = 25C)
SYMBOL F P1dB Gss Gss NF Input RL Output RL Idd Vdd PARAMETERS/TEST CONDITIONS1 Operating Frequency Range Ouput Power at 1dB Gain Compression @ Vdd=6V 50% Idss Small Signal Gain Small Signal Gain Flatness Noise Figure Input Return Loss Output Return Loss Power Supply Current Power Supply Voltage 9 7 160 5 8 MIN 9 16.5 12 18.0 14 1.5 4 2.0 TYP MAX 16 UNITS GHz dBm dB dB dB dB dB mA V
Notes: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting.
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4 Revised May 2004
EMA205B
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Total Power Dissipation Channel Temperature Storage Temperature VALUE 8V -3 V 225 mA 9 mA @ 3dB compression 900 mW 150C -65/+150C
1,2
Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. 2. Bias conditions must also satisfy the following equation PT < (TCH -TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS * IDS) - (POUT - PIN).
S-PARAMETERS ( On wafer Sij measurements ) 5V, 1/2 Idss
FREQ (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 --- S11 --MAG ANG 0.365 -129.2 0.471 -172.2 0.450 172.4 0.422 162.0 0.389 154.2 0.350 148.0 0.312 143.6 0.276 141.4 0.250 138.6 0.234 136.9 0.226 139.7 0.221 141.9 0.222 140.6 0.220 135.3 0.235 131.2 0.271 127.6 0.385 119.2 0.511 89.3 0.577 53.6 0.577 21.6 0.564 -2.5 0.589 -23.7 0.606 -42.8 0.623 -58.4 0.6426 -70.4 0.664 -79.7 0.694 -88.2 0.732 -98.1 0.761 -106.2 0.791 -114.1 --- S21 --MAG ANG 0.276 82.1 0.441 47.4 0.416 3.6 0.389 16.1 0.826 35.4 1.825 8.7 3.185 -29.7 4.559 -73.3 5.385 -117.5 5.626 -159.0 5.497 166.2 5.350 136.0 5.326 107.4 5.360 79.5 5.594 50.3 6.062 18.7 6.709 -17.2 6.771 -59.4 5.973 -105.7 4.309 -151.4 2.567 171.8 1.423 155.1 1.095 146.8 0.917 130.5 0.754 112.2 0.607 94.3 0.487 76.6 0.399 58.6 0.330 41.6 0.271 24.2 --- S12 --MAG ANG 0.0038 -28.6 0.0011 -88.5 0.0008 -125.9 0.0006 -139.8 0.0007 -175.1 0.0011 160.0 0.0020 139.7 0.0030 97.5 0.0037 58.0 0.0045 18.1 0.0052 -10.6 0.0052 -34.2 0.0060 -54.4 0.0067 -76.5 0.0077 -103.0 0.0101 -130.2 0.0122 -160.7 0.0122 160.1 0.0111 115.1 0.0072 74.4 0.0022 33.0 0.0004 127.1 0.0018 108.7 0.0021 87.5 0.0023 72.2 0.0027 75.1 0.0031 76.8 0.0026 68.9 0.0015 58.9 0.0014 23.6 --- S22 --MAG ANG 0.620 -112.2 0.844 -167.7 0.810 158.0 0.732 130.9 0.614 104.5 0.430 73.8 0.185 34.2 0.078 -139.8 0.245 168.1 0.300 137.5 0.275 115.0 0.214 99.9 0.149 95.2 0.092 109.1 0.088 149.1 0.132 172.4 0.205 176.3 0.314 172.1 0.457 159.6 0.608 141.4 0.711 119.8 0.733 98.4 0.686 81.3 0.628 69.0 0.585 59.3 0.555 50.8 0.531 42.8 0.511 34.9 0.496 27.0 0.480 19.1
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 4 Revised May 2004
EMA205B
ASSEMBLY DRAWING
50pF
50 ohm line on Alumina
50 ohm line on Alumina RF INPUT
RF OUTPUT
50pF 0.1uF 0.1uF
50pF
MIM Cap.
BOND
PAD
VGG
VDD
The length of RF wires should be as short as possible. Use at least two wires between RF pad and 50 ohm line and separate the wires to minimize the mutual inductance.
CAUTION: Bonding tip and wires MUST stay within pad dimensions as illustrated in CHIP OUTLINE below.
Violation may cause damages on components in chip (especially damaging output MIM capacitor as shown on above zoom-in graph).
CHIP OUTLINE (dimensions in microns)
1580 (VD1) 1730 (VD3-4)
1060
68 330
620 (RF IN)
105 330 (RF OUT)
0 90 (VG1-4)
1580 (VD2)
100 0
Chip Size 1060 x 2000 microns Chip Thickness: 75 13 microns PAD Dimensions: 1. DC 100 x 100 microns 2. RF 80 x 68 microns
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
2000
page 3 of 4 Revised May 2004
EMA205B
TYPICAL APPLICATION PERFORMANCE
Small Signal Gain 25 Small Signal Gain [dB] 20 Return loss [dB] 15 10 5 0 0 5 10 15 20 frequency [GHz] 25 30 Vdd=5V Idd=125mA 0 -5 -10 -15 -20 -25 0 5 10 15 20 frequency [GHz] 25 30 I nput O ut put Input & Output Return loss Vdd=5V Idd=125mA
Noise Figure 12 Noise Figure [dB] 8 6 4 2 0 5 10
Vd=3.5V Id=150mA
P1dB 25 20 P1dB [dBm] 15 10 5 0
Vdd=5V
10 15 Frequency [GHz]
20
8
10
12 14 frequency [GHz]
16
18
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 4 of 4 Revised May 2004

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