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MITSUBISHI
PM100CL1A060
FLAT-BASE TYPE INSULATED PACKAGE
PM100CL1A060
FEATURE
Inverter + Drive & Protection IC a) Adopting new 5th generation Full-Gate CSTBTTM chip b) The over-temperature protection which detects the chip surface temperature of CSTBTTM is adopted. c) Error output signal is possible from all each protection upper and lower arm of IPM. d) Compatible L-series package. * 3 100A, 600V Current-sense and temperature sense IGBT type inverter * Monolithic gate drive & protection logic * Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-FO available from upper arm devices) * UL Recognized
APPLICATION General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
LABEL
Dimensions in mm
11 7 (19.75) 19.75 3.25 16 3-2 16 3-2
120 106 66.5 16 3-2 15.25 6-2 2-5.5 MOUNTING HOLES 16 3
12
17.5
1
5
9
13
19
27.5 32
14.5
B
U
V
W
(13.5)
6-M5 NUTS
10.75 12 32.75 23 23 19-0.5 23
11.75
55
2-2.5
17.5
N P
22 + 1 - 0.5
(SCREWING DEPTH) 12
Terminal code 1. 2. 3. 4. 5. 6. 7. VUPC UFO UP VUP1 VVPC VFO VP 8. 9. 10. 11. 12. 13. 14. VVP1 VWPC WFO WP VWP1 VNC VN1 15. 16. 17. 18. 19. NC UN VN WN Fo
13 3.15
(7)
May 2009 1
MITSUBISHI
PM100CL1A060
FLAT-BASE TYPE INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
NC Fo
1.5k
VNC WN
VN1
VN
UN
WP VWP1 VWPC WFO
VP VVPC
VVP1 VFO
UP VUPC
VUP1 UFO
1.5k
1.5k
1.5k
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd
Si Out
OT
Gnd
Si Out
OT
Gnd
Si Out
OT
Gnd
Si Out
OT
Gnd
Si Out
OT
Gnd
Si Out
OT
NC
N
W
V
U
P
MAXIMUM RATINGS (Tj = 25C, unless otherwise noted) INVERTER PART
Symbol VCES IC ICP PC Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25C TC = 25C TC = 25C (Note-1) (Note-1) Ratings 600 100 200 390 -20 ~ +150 Unit V A A W C
*: Tc measurement point is just under the chip.
CONTROL PART
Symbol VD VCIN VFO IFO Parameter Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Condition Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN-VNC Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC FO-VNC Sink current at UFO, VFO, WFO, FO terminals Ratings 20 20 20 20 Unit V V V mA
May 2009 2
MITSUBISHI
PM100CL1A060
FLAT-BASE TYPE INSULATED PACKAGE
TOTAL SYSTEM
Parameter Supply Voltage Protected by VCC(PROT) SC VCC(surge) Supply Voltage (Surge) Storage Temperature Tstg Isolation Voltage Viso Symbol Condition VD = 13.5 ~ 16.5V Inverter Part, Tj = +125C Start Applied between : P-N, Surge value 60Hz, Sinusoidal, Charged part to Base, AC 1 min. Ratings 400 500 -40 ~ +125 2500 Unit V V C Vrms
THERMAL RESISTANCES
Symbol Rth(j-c)Q Rth(j-c)F Rth(c-f) Parameter Junction to case Thermal Resistances Contact Thermal Resistance Condition Inverter IGBT part (per 1 element) Inverter FWDi part (per 1 element) Case to fin, (per 1 module) Thermal grease applied (Note-1) (Note-1) (Note-1) Min. -- -- -- Limits Typ. -- -- -- Max. 0.32 0.52 0.038 Unit
C/W
* If you use this value, Rth(f-a) should be measured just under the chips.
(Note-1) Tc (under the chip) measurement point is below. arm axis X Y UP IGBT FWDi 28.6 28.6 -0.4 -9.0 VP IGBT FWDi 65.4 65.4 -0.4 -9.0 WP IGBT FWDi 87.4 87.4 -0.4 -9.0 UN IGBT FWDi 38.6 38.6 -1.1 6.5 VN IGBT FWDi 54.6 54.6 -1.1 6.5
(unit : mm) WN IGBT FWDi 76.6 76.6 -1.1 6.5
Bottom view
ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise noted) INVERTER PART
Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Condition VD = 15V, IC = 100A VCIN = 0V, Pulsed (Fig. 1) -IC = 100A, VD = 15V, VCIN = 15V VD = 15V, VCIN = 0V15V VCC = 300V, IC = 100A Tj = 125C Inductive Load VCE = VCES, VD = 15V (Fig. 5) Tj = 25C Tj = 125C (Fig. 2) Min. -- -- -- 0.3 -- -- -- -- -- -- Limits Typ. 1.75 1.75 1.7 0.8 0.4 0.4 1.0 0.3 -- -- Max. 2.35 2.35 2.8 2.0 0.8 1.0 2.3 1.0 1 10 Unit V V
Switching Time
s
(Fig. 3,4) Tj = 25C Tj = 125C
Collector-Emitter Cutoff Current
mA
May 2009 3
MITSUBISHI
PM100CL1A060
FLAT-BASE TYPE INSULATED PACKAGE
CONTROL PART
Symbol ID Vth(ON) Vth(OFF) SC toff(SC) OT OT(hys) UV UVr IFO(H) IFO(L) tFO Parameter Circuit Current Input ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay Time Over Temperature Protection Supply Circuit Under-Voltage Protection Fault Output Current Minimum Fault Output Pulse Width VD = 15V, VCIN = 15V Condition VN1-VNC V*P1-V*PC Min. -- -- 1.2 1.7 200 -- 135 -- 11.5 -- -- -- 1.0 Limits Typ. 6 2 1.5 2.0 -- 0.2 -- 20 12.0 12.5 -- 10 1.8 Max. 12 4 1.8 2.3 -- -- -- -- 12.5 -- 0.01 15 -- Unit mA V A s C V mA ms
Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN-VNC (Fig. 3,6) -20 Tj 125C, VD = 15V VD = 15V Detect Temperature of IGBT chip -20 Tj 125C VD = 15V, VCIN = 15V VD = 15V (Fig. 3,6) Trip level Hysteresis Trip level Reset level (Note-2) (Note-2)
(Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it.
MECHANICAL RATINGS AND CHARACTERISTICS
Symbol -- -- Parameter Mounting torque Weight Mounting part Main terminal part -- Condition screw : M5 screw : M5 Min. 2.5 2.5 -- Limits Typ. 3.0 3.0 380 Max. 3.5 3.5 -- Unit N*m g
RECOMMENDED CONDITIONS FOR USE
Symbol VCC VD VCIN(ON) VCIN(OFF) fPWM tdead Parameter Supply Voltage Control Supply Voltage Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time Condition Applied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC (Note-3) Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN-VNC Using Application Circuit of Fig. 8 For IPM's each input signals (Fig. 7) Recommended value 400 15.0 1.5 0.8 9.0 20 2.0 Unit V V V kHz s
(Note-3) With ripple satisfying the following conditions: dv/dt swing 5V/s, Variation 2V peak to peak 5V/s 2V 15V GND
May 2009 4
MITSUBISHI
PM100CL1A060
FLAT-BASE TYPE INSULATED PACKAGE
PRECAUTIONS FOR TESTING 1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing "SC" tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.)
P, (U,V,W)
IN Fo IN Fo
P, (U,V,W)
VCIN
(0V)
V
Ic
VCIN
(15V)
V
-Ic
VD (all)
U,V,W, (N)
VD (all)
U,V,W, (N)
Fig. 1 VCE(sat) Test
Fig. 2 VEC, (VFM) Test
a) Lower Arm Switching
P
Fo
VCIN (15V) VCIN
Signal input (Upper Arm) Signal input (Lower Arm)
Fo
trr
U,V,W
VCE Irr Ic 90%
CS
Vcc 90%
N
b) Upper Arm Switching
VCIN Signal input (Upper Arm) Signal input (Lower Arm)
VD (all)
P
Ic
10% tc(on) VCIN
10%
10% tc(off)
10%
Fo
U,V,W
CS
Vcc
td(on)
tr
td(off)
tf
VCIN (15V)
Fo
(ton = td(on) + tr)
N
(toff = td(off) + tf)
VD (all)
Ic
Fig. 3 Switching time and SC test circuit
Fig. 4 Switching time test waveform
VCIN Short Circuit Current
P, (U,V,W) A
IN Fo
Constant Current SC Trip
Pulse VCE
VCIN (15V)
Ic
VD (all)
U,V,W, (N)
Fo toff(SC)
Fig. 5 ICES Test
Fig. 6 SC test waveform
IPM' input signal VCIN (Upper Arm)
0V
IPM' input signal VCIN (Lower Arm)
1.5V
2V
1.5V
t
0V
2V
1.5V
2V
t
tdead
tdead
tdead
1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value
Fig. 7 Dead time measurement point example
May 2009 5
MITSUBISHI
PM100CL1A060
FLAT-BASE TYPE INSULATED PACKAGE
P
20k 10
VUP1 UFo UP VUPC
1.5k
Vcc Fo In
OT OUT Si U
VD
IF
+ -
GND GND Vcc
1.5k
0.1
VVP1 VFo
VD
Fo In
OT OUT Si V
VP VVPC VWP1 WFo
1.5k
GND GND Vcc Fo In GND GND OT OUT Si W
M
VD
WP VWPC
20k
IF
10
Vcc Fo UN In
OT OUT Si N
0.1 20k
GND GND OT
10
IF
Vcc VN Fo In
OUT Si
0.1 20k
GND GND VN1
10
Vcc Fo In
OT OUT Si NC
VD
IF
WN
0.1
VNC
GND GND
NC 5V
1k
Fo
1.5k
: Interface which is the same as the U-phase
Fig. 8 Application Example Circuit
NOTES FOR STABLE AND SAFE OPERATION ; Design the PCB pattern to minimize wiring length between opto-coupler and IPM's input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler. Fast switching opto-couplers: tPLH, tPHL 0.8s, Use High CMR type. Slow switching opto-coupler: CTR > 100% Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply. Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal. Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line and improve noise immunity of the system.
* * * * * * *
May 2009 6
MITSUBISHI
PM100CL1A060
FLAT-BASE TYPE INSULATED PACKAGE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 Tj = 25C Tj = 125C 80 100 VD = 15V
120
COLLECTOR CURRENT IC (A)
Tj = 25C VD = 17V
15V
100 80 60 40 20 0 0
13V
0
0.5
1.0
1.5
2.0
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR RECOVERY CURRENT -IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 12 13 14 15 IC = 100A Tj = 25C Tj = 125C 16 17 18
DIODE FORWARD CHARACTERISTICS (TYPICAL) 103
7 5 3 2
VD = 15V
102
7 5 3 2
101
7 5 3 2
Tj = 25C Tj = 125C 0 0.5 1.0 1.5 2.0 2.5
100
CONTROL VOLTAGE VD (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
SWITCHING TIME tc(on), tc(off) (s)
SWITCHING TIME ton, toff (s)
SWITCHING TIME (ton, toff) CHARACTERISTICS (TYPICAL) 101 VCC = 300V 7 VD = 15V 5 Tj = 25C 4 Tj = 125C 3 Inductive load
2
SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS (TYPICAL) 100
7 5 4 3 2
tc(off)
tc(on) tc(off) VCC = 300V VD = 15V Tj = 25C Tj = 125C Inductive load
100
7 5 4 3 2
toff ton
10-1
7 5 4 3 2
10-1 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A)
10-2 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A)
May 2009 7
MITSUBISHI
PM100CL1A060
FLAT-BASE TYPE INSULATED PACKAGE
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0
0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 trr
25 20 15 10 5 0 120
Eoff
0
20
40
60
80
100
120
COLLECTOR CURRENT IC (A)
COLLECTOR REVERSE CURRENT -IC (A)
SWITCHING LOSS Err (mJ/pulse)
SWITCHING RECOVERY LOSS CHARACTERISTICS (TYPICAL) 3.0 VCC = 300V VD = 15V 2.5 Tj = 25C Tj = 125C 2.0 Inductive load 1.5 1.0 0.5 0
ID (mA)
ID VS. fc CHARACTERISTICS (TYPICAL) 35 30 25 20 15 10 5 P-side VD = 15V Tj = 25C Tj = 125C N-side
0
20
40
60
80
100
120
0
0
5
10
15
20
25
COLLECTOR REVERSE CURRENT -IC (A)
fc (kHz)
SC (SC of Tj = 25C is normalized 1)
UV TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) 20 UVt 18 UVr 16 14
UVt /UVr (V)
SC TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) 2.0 VD = 15V 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -50 0 50 Tj (C)
May 2009
12 10 8 6 4 2 0 -50 0 50 Tj (C) 100 150
100
150
8
REVERSE RECOVERY CURRENT lrr (A)
SWITCHING LOSS Eon, Eoff (mJ/pulse)
REVERSE RECOVERY TIME trr (s)
SWITCHING LOSS CHARACTERISTICS (TYPICAL) 6.0 VCC = 300V Eon 5.5 VD = 15V 5.0 Tj = 25C Tj = 125C 4.5 4.0 Inductive load
DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 1.0 50 VCC = 300V 0.9 VD = 15V 45 Tj = 25C 0.8 40 Tj = 125C 0.7 Inductive 35 Irr 30 0.6 load
MITSUBISHI
PM100CL1A060
FLAT-BASE TYPE INSULATED PACKAGE
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) 100
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c)
7 5 3 2
10-1
7 5 3 2
10-2 Single Pulse 7 5 IGBT part; 3 Per unit base = Rth(j-c)Q = 0.32C/ W 2 FWDi part; Per unit base = Rth(j-c)F = 0.52C/ W 10-3 -5 10 2 3 5 710-4 2 3 5 710-32 3 5 710-2 2 3 5 710-12 3 5 7100 2 3 5 7101 TIME t (sec)
May 2009 9

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