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| S1PA thru S1PJ New Product Vishay Semiconductors formerly General Semiconductor Case Style SMP Cathode band High Current Density Surface Mount Glass-Passivated Rectifiers Reverse Voltage 50 to 600 V Features * * * * Forward Current 1.0 A Very low profile - typical height of 1.0mm Ideal for automated placement Glass passivated chip junction For use in rectification, power supply, home appliances and telecommunication * High temperature soldering: 260C maximum/10 seconds at terminals * Meets MSL level 1 per J-STD-020C 0.086 (2.18) 0.074 (1.88) 0.142 (3.61) 0.126 (3.19) 0.158 (4.00) 0.146 (3.70) Mechanical Data 0.013 (0.35) 0.004 (0.10) 0.045 (1.15) 0.033 (0.85) 0.012 (0.30) 0.000 (0.00) Case: SMP Terminals: Matte Tin plated (E3 Suffix) leads, solderable per J-STD-002B and MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.0009 oz., 0.024 g Epoxy meets UL 94V-0 flammability rating 0.018 (0.45) 0.006 (0.15) Mounting Pad Layout Dimensions in inches and (millimeters) 0.105 (2.67) 0.025 (0.635) 0.030 (0.762) 0.012 (0.30) REF 0.053 (1.35) 0.041 (1.05) 0.036 (0.91) 0.024 (0.61) 0.100 (2.54) 0.050 (1.27) 0.103 (2.60) 0.087 (2.20) 0.032 (0.80) 0.016 (0.40) Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified. Parameter Device marking code Maximum reverse voltage Maximum average forward rectified current Fig.1 Peak forward surge current 10ms single half sine-wave superimposed on rated load Typical thermal resistance (1) Operating junction temperature Storage temperature Symbol VRM IF(AV) IFSM RJA RJL RJC TJ, TSTG S1PA SA 50 S1PB SB 100 S1PD SD 200 1 30 105 15 20 150 -55 to +150 S1PG SG 400 S1PJ SJ 600 Unit V A A C/W C C Electrical Characteristics Ratings at 25C ambient temperature unless otherwise specified. Parameter Symbol Maximum instantaneous forward voltage(2) at IF=1A, TJ=25C VF at IF=1A, TJ=125C Maximum reverse current TJ = 25C IR at rated VR(2) TJ =125C Typical reverse recovery time at trr at IF = 0.5A, IR = 1.0A, Irr = 0.25A Typical junction capacitance at 4.0V, 1MHz Value 1.1 0.95 1.0 50 1.8 Unit V A s CJ 6.0 pF Notes: (1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0mm copper pad areas. RJL is measured at the terminal of cathode band. RJC is measured at the top centre of the body (2) Pulse test: 300s pulse width, 1% duty cycle Document Number 88917 23-Sep-04 www.vishay.com 1 S1PA thru S1PJ Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve 1.2 30 Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Average Forward Rectified Current (A) Peak Forward Surge Current (A) 1.0 0.8 0.6 0.4 TL measured at the cathode band terminal 0.2 0 80 90 100 110 120 130 140 150 25 20 15 10 05 0 1 10 100 Lead Temperature (C) Number of Cycles at 50 HZ Fig. 3 - Typical Instantaneous Forward Characteristics 100 100 Fig. 4 - Typical Reverse Leakage Characteristics Instantaneous Reverse Current (A) TJ = 150C 10 TJ = 125C Instantaneous Forward Current (A) 10 TJ = 150C 1 TJ = 25C 0.1 TJ = 125C 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 0.1 TJ = 25C 0.01 10 20 30 40 50 60 70 80 90 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Junction Capacitance 1000 1000 Fig. 6 - Typical Transient Thermal Impedance Transient Thermal Impedance (C/W) Junction Capacitance (pF) 100 100 10 1 0.1 1 10 100 1 0.01 0.1 1 10 100 Reverse Voltage (V) t, Pulse Duration (sec.) www.vishay.com 2 Document Number 88917 23-Sep-04 |
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