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AUTOMOTIVE GRADE
PD - 96319
Features
l l l l l l l
HEXFET(R) Power MOSFET
D
AUIRF3805 AUIRF3805S AUIRF3805L
55V 2.6m 3.3m 210A c max.
Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
V(BR)DSS RDS(on) typ.
G S
ID (Silicon Limited)
ID (Package Limited) 160A
D D
Description
Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D
G
D
S
G
D
S G D
S
TO-220AB AUIRF3805 G
D2Pak AUIRF3805S D
TO-262 AUIRF3805L S
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified.
Parameter
Max.
Units
A W W/C V mJ A mJ C
ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C VGS EAS EAS (Tested ) IAR EAR TJ TSTG
Thermal Resistance
RJC RCS RJA RJA
Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally limited) Single Pulse Avalanche Energy Tested Value Avalanche CurrentAd Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw
d
e
e
h
210 150 160 890 300 2.0 20 650 940 See Fig.12a, 12b, 15, 16 -55 to + 175 300 10 lbfyin (1.1Nym)
i
Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB Mount)
k i
Parameter
Typ.
--- 0.50 --- ---
Max.
0.5 --- 62 40
i j
l
Units
C/W
HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/
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1
07/20/10
AUIRF3805/S/L
Static Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
55 --- --- 2.0 75 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.051 2.6 --- --- --- --- --- --- 190 52 72 150 20 93 87 4.5 7.5 7960 1260 630 4400 980 1550 --- --- 3.3 4.0 --- 20 250 200 -200 290 --- --- --- --- --- --- --- nH --- --- --- --- --- --- ---
Conditions
V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 75A V VDS = VGS, ID = 250A V VDS = 25V, ID = 75A ** VDS = 55V, VGS = 0V A VDS = 55V, VGS = 0V, TJ = 125C VGS = 20V nA VGS = -20V
f**
Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. nC ID = 75A ** VDS = 44V VGS = 10V VDD = 28V ID = 75A** RG = 2.6 VGS = 10V Between lead,
f f
ns
D
6mm (0.25in.) from package
G
pF
S and center of die contact VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 44V, = 1.0MHz VGS = 0V, VDS = 0V to 44V
g
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton
Note
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 36 47 210 A 890 1.3 54 71 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 75A** , VGS = 0V TJ = 25C, IF = 75A** , VDD = 28V di/dt = 100A/s
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
through ,,
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
are on page 3
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AUIRF3805/S/L
Qualification Information
Automotive (per AEC-Q101) Qualification Level
Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. 3L-D2 PAK MSL1 , 260C N/A Class M4(+/-425V) (per AEC-Q101-002) Class H3A(+/-4000V) (per AEC-Q101-001) Class C5 (+/-1000V) (per AEC-Q101-005) Yes
Moisture Sensitivity Level
3L-TO-262 3L-TO-220
Machine Model ESD Human Body Model Charged Device Model RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report.
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 160A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). This value determined from sample failure population , starting T J = 25C, L = 0.23mH RG = 25, I AS = 75A, VGS =10V. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This is only applied to TO-220AB pakcage. This is applied to D2Pak, when mounted on 1" square PCB (FR- 4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ of approximately 90C. TO-220 device will have an Rth of 0.45C/W. * * All AC and DC test condition based on former Package limitated current of 75A.
80% VDSS .
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AUIRF3805/S/L
1000
TOP
1000
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
TOP
BOTTOM
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
100
10
4.5V
60s PULSE WIDTH Tj = 25C
1 0.1 1 10 100 10 0.1
4.5V
60s PULSE WIDTH Tj = 175C
10 100
1
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.0
200
TJ = 175C
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current()
TJ = 25C 160 TJ = 175C
100.0
120
10.0
TJ = 25C
1.0
80
VDS = 20V 60s PULSE WIDTH
0.1 4.0 5.0 6.0 7.0 8.0
40
VDS = 10V 380s PULSE WIDTH 0 20 40 60 80 100 120 140 160 180
0 ID, Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance Vs. Drain Current
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AUIRF3805/S/L
14000 12000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
VGS, Gate-to-Source Voltage (V)
ID= 75A 16
VDS = 44V VDS= 28V
C, Capacitance (pF)
10000 8000 6000 4000 2000 0 1
Ciss
12
8
Coss Crss
10 100
4
0 0 50 100 150 200 250 300 QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000.0
10000
ISD , Reverse Drain Current (A)
TJ = 175C
100.0
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R DS (on)
1000 100sec 100 10msec 10 1msec
10.0
TJ = 25C
1.0
1
VGS = 0V
0.1 0.0 0.4 0.8 1.2 1.6 2.0 2.4
Tc = 25C Tj = 175C Single Pulse 1 10 100 1000
0.1 VDS , Drain-toSource Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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AUIRF3805/S/L
240 LIMITED BY PACKAGE 200
ID , Drain Current (A)
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0
ID = 75A
VGS = 10V
160 120 80 40 0 25 50 75 100 125 150 175 T C , Case Temperature (C)
1.5
1.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10. Normalized On-Resistance Vs. Temperature
1
D = 0.50
Thermal Response ( ZthJC )
0.1
0.20 0.10 0.05 0.02 0.01
R1 R1 J 1 2 R2 R2 C 1 2
0.01
J
Ri (C/W) 0.2653 0.2347
i (sec) 0.001016 0.012816
0.001
Ci= i/Ri Ci i/Ri
SINGLE PULSE ( THERMAL RESPONSE )
0.0001 1E-006 1E-005 0.0001 0.001
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF3805/S/L
EAS, Single Pulse Avalanche Energy (mJ)
15V
2000
VDS
L
DRIVER
1600
ID 15A 20A BOTTOM 75A
TOP
RG
20V VGS
D.U.T
IAS tp
+ V - DD
1200
A
0.01
800
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
400
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature (C)
I AS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
10 V
QGS
QGD
VGS(th) Gate threshold Voltage (V)
4.5
VG
4.0
ID = 250A
3.5
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
3.0
2.5
50K 12V .2F .3F
2.0
D.U.T. VGS
3mA
+ V - DS
1.5 -75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( C )
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 14. Threshold Voltage Vs. Temperature
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AUIRF3805/S/L
10000
Duty Cycle = Single Pulse
Avalanche Current (A)
1000
100
0.01 0.05
Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax
10
0.10
1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
800
EAR , Avalanche Energy (mJ)
600
TOP Single Pulse BOTTOM 1% Duty Cycle ID = 75A
400
200
0 25 50 75 100 125 150
Starting TJ , Junction Temperature (C)
Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f 175 ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
Fig 16. Maximum Avalanche Energy Vs. Temperature
8
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AUIRF3805/S/L
Driver Gate Drive
D.U.T
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* dv/dt controlled by R G * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
RD
V DS V GS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
-V DD
Fig 18a. Switching Time Test Circuit
VDS 90%
10% VGS
td(on) tr t d(off) tf
Fig 18b. Switching Time Waveforms
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AUIRF3805/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRF3805
IR Logo
YWWA
XX or XX
Date Code Y= Year WW= Work Week A= Automotive, Lead Free
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF3805/S/L
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AUIRF3805S
IR Logo
YWWA
XX or XX
Date Code Y= Year WW= Work Week A= Automotive, Lead Free
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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11
AUIRF3805/S/L
TO-262 Package Outline (
Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
Part Number
AUIRF3805L
IR Logo
YWWA
XX or XX
Date Code Y= Year WW= Work Week A= Automotive, Lead Free
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
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AUIRF3805/S/L
D2Pak Tape & Reel Infomation
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059)
0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039) 24.40 (.961) 3
30.40 (1.197) MAX. 4
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AUIRF3805/S/L
Ordering Information
Base part AUIRF3805 AUIRF3805L AUIRF3805S Package Type TO-220 TO-262 D2Pak Standard Pack Form Tube Tube Tube Tape and Reel Left Tape and Reel Right Complete Part Number Quantity 50 50 50 800 800 AUIRF3805 AUIRF3805L AUIRF3805S AUIRF3805STRL AUIRF3805STRR
14
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AUIRF3805/S/L
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR's standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or "enhanced plastic." Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation "AU". Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements
For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
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