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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors D45H11 DESCRIPTION *With TO-220C package *Fast switching speeds *Low collector saturation voltage APPLICATIONS *For general purpose power amplifications and switching regulators,converters and power amplifiers applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings (Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Total power dissipation Junction temperature Storage temperature TC=25 Ta=25 CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -5 -10 -20 50 1.67 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 2.5 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector capacitance CONDITIONS IC=-10mA IB=0, IC=-8A ;IB=-0.4A IC=-8A ;IB=-0.8A VCE=-80V; VBE=0 VEB=-5V; IC=0 IC=-2A ; VCE=-1V IC=-4A ; VCE=-1V IC=-0.5A ; VCE=-10V f=1MHz ; VCB=-10V 60 40 40 230 MIN -80 TYP. SYMBOL VCEO(SUS) VCEsat VBEsat ICES IEBO hFE-1 hFE-2 fT Ccb D45H11 MAX UNIT V -1.0 -1.5 -10 -0.1 V V A mA MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=-5A IB1=- IB2=-0.5A 135 0.5 0.1 ns s s 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE D45H11 Fig.2 Outline dimensions (unindicated tolerance: 0.10mm) 3 |
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