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| Light Emitting Diode(InGaN) KLB-520 G DIMENSIONS KLB-520 G is a high bright InGaN Green LED, and has the optimized optical characteristics. Unit : [mm] Features * Transparent epoxy lens * High Optical Output Applications * Display * Indicator * Signage * Camera Maximum Ratings Parameter Reverse voltage Forward current Pulse forward current Power dissipation Storage temperature Soldering Temperature *2. Soldering time 5 Sec *2 *1 [ Ta=25C ] Symbol VR IF IFP PD Topr. Tstg. Tsol. Ratings 5 30 0.5 105 -30 ~ +85 -40 ~ +100 260 Unit V mA A mW C C C Operating temperature *1. IFP Measured under duty 1/10 @ 1KHz Keep the distance more than 3mm from soldering foundation. Electro-Optical Characteristics Parameter Forward voltage Reverse current Luminous Intensity Peak emission wavelength Doninant Wave Length Spectral half bandwidth Half angle [ Ta=25C ] Symbol VF IR Iv P d 21/2 Conditions IF = 20 mA VR = 5 V IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA Min 15 520 - Typ 3.2 20 520 15 8 Max 3.5 50 530 - Unit V uA cd nm nm nm deg. 1/2 Light Emitting Diode(InGaN) KLB-520 G Forward current vs. Ambient temperature 50 40 30 20 10 0 Relative intensity Radiant Intensity vs. Forward current 2.0 Forward current IF[mA] 1.0 0.5 0 20 40 60 80 100 0 0 1 3 5 10 15 20 25 30 Ambient temperature Ta [] Forward current IF[mA] Relative radiant intensity vs. Ambient temperature Relative radiant intensity PO Relative intensity vs. Wavelength 1.2 1 10 Intensity [arb.] 0 20 40 60 80 100 Ambient temperature Ta [] 0.8 0.6 0.4 0.2 1 0.1 -20 0 400 450 500 550 600 650 Wave Length[nm] Forward current vs. Forward voltage 40 35 30 25 20 15 10 5 0 0 Radiant Pattern Angle(deg) Forward current IF[mA] +4 +60 0 +20 0 -20 -4 0 -6 0 50 -80 -100 + 80 +1 00 0 100 50 50 1.0 2.0 2.5 3.0 3.5 4.0 Forward voltage VF[V] 100 Relative intensity(%) 2/2 |
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