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| BSC042NE7NS3 G OptiMOSTM3 Power-Transistor Product Summary Features * Optimized technology for synchronous rectification * Ideal for high frequency switching and DC/DC converters * Excellent gate charge x R DS(on) product (FOM) * Superior thermal resistance * N-channel, normal level * 100% avalanche tested * Pb-free plating; RoHS compliant * Qualified according to JEDEC1) for target applications * Halogen-free according to IEC61249-2-21 Type BSC042NE7NS3 G V DS R DS(on),max ID 75 4.2 100 V m A Package Marking PG-TDSON-8 042NE7NS Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 C V GS=10 V, T C=100 C V GS=10 V, T A=25 C, R thJA=50 K/W 2) Pulsed drain current3) Avalanche energy, single pulse Gate source voltage 1) 2) Value 100 83 Unit A 19 400 220 20 mJ V I D,pulse E AS V GS T C=25 C I D=50 A, R GS=25 J-STD20 and JESD22 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev. 2.21 page 1 2009-11-11 BSC042NE7NS3 G Maximum ratings, at T j=25 C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 C T A=25 C, R thJA=50 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j, T stg Value 125 2.5 -55 ... 150 55/150/56 C Unit W Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case R thJC top Device on PCB R thJA minimal footprint 6 cm2 cooling area2) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=91 A V DS=75 V, V GS=0 V, T j=25 C V DS=75 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance I GSS R DS(on) RG g fs |V DS|>2|I D|R DS(on)max, I D=50 A V GS=20 V, V DS=0 V V GS=10 V, I D=50 A 75 2.3 3.1 0.1 3.8 1 A V 1 18 62 50 K/W 44 10 10 3.7 2.2 89 100 100 4.2 nA m S Rev. 2.21 page 2 2009-11-11 BSC042NE7NS3 G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 5) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 5) Values typ. max. Unit C iss C oss Crss t d(on) tr t d(off) tf V DD=37.5 V, V GS=10 V, I D=25 A, R G=1.8 V GS=0 V, V DS=37.5 V, f =1 MHz - 3600 810 40 14 17 34 9 4800 1100 - pF ns Q gs Q gd Q sw Qg V plateau Q oss V DD=37.5 V, V GS=0 V V DD=37.5 V, I D=50 A, V GS=0 to 10 V - 18.3 10.4 17.6 52 5.1 53 69 71 nC V IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=50 A, T j=25 C - 0.9 44 64 100 400 1.2 - A V ns nC V R=40 V, I F=25A, di F/dt =100 A/s - See figure 16 for gate charge parameter definition Rev. 2.21 page 3 2009-11-11 BSC042NE7NS3 G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 150 120 125 100 100 80 P tot [W] 75 I D [A] 0 25 50 75 100 125 150 175 60 50 40 25 20 0 0 0 25 50 75 100 125 150 175 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 limited by on-state resistance 1 s 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 10 10 s 10 2 100 s 1 Z thJC [K/W] 0.5 I D [A] 10 1 1 ms 0.2 0.1 10 0 0.1 10 ms 0.05 DC 0.02 0.01 10 -1 single pulse 10-1 100 101 102 0.01 0 0 0 0 0 0 1 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 2.21 page 4 2009-11-11 BSC042NE7NS3 G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 400 360 320 280 10 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 12 10 7V 5V 5.5 V 6V 7V 8 200 160 6V R DS(on) [m] 240 I D [A] 6 120 80 40 0 0 1 2 5.5 V 4 10 V 2 5V 4.5 V 0 3 0 100 200 300 400 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 200 8 Typ. forward transconductance g fs=f(I D); T j=25 C 200 160 160 120 120 80 g fs [S] 80 40 40 150 C 25 C I D [A] 0 0 2 4 6 8 0 0 40 80 120 160 200 V GS [V] I D [A] Rev. 2.21 page 5 2009-11-11 BSC042NE7NS3 G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=50 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS 8 4 910 A 6 3 91 A R DS(on) [m] max 4 typ V GS(th) [V] 100 140 180 2 2 1 0 -60 -20 20 60 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 Ciss 1000 150C, max 10 3 100 Coss C [pF] I F [A] 25 C 150 C 102 10 Crss 25C, max 101 0 15 30 45 60 75 1 0.0 0.5 1.0 1.5 2.0 V DS [V] V SD [V] Rev. 2.21 page 6 2009-11-11 BSC042NE7NS3 G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=50 A pulsed parameter: V DD 12 40 V 10 20 V 100 C 25 C 60 V 125 C 8 10 V GS [V] I AV [A] 6 4 2 1 0.1 1 10 100 1000 0 0 10 20 30 40 50 60 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 90 V GS 85 Qg 80 V BR(DSS) [V] 75 V g s(th) 70 65 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 60 T j [C] Rev. 2.21 page 7 2009-11-11 BSC042NE7NS3 G PG-TDSON-8 (SuperSO8) Rev. 2.21 page 8 2009-11-11 BSC042NE7NS3 G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.21 page 9 2009-11-11 |
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