 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Type IPD038N04N G OptiMOS(R)3 Power-Transistor Features * Fast switching MOSFET for SMPS * Optimized technology for DC/DC converters * Qualified according to JEDEC for target applications * N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * 100% Avalanche tested * Pb-free plating; RoHS compliant Type IPD038N04N G 1) Product Summary V DS R DS(on),max ID 40 3.8 90 V m A Package Marking PG-TO252-3 038N04N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 C V GS=10 V, T C=100 C Pulsed drain current2) Avalanche current, single pulse 3) Avalanche energy, single pulse Gate source voltage 1) Value 90 84 400 90 55 20 Unit A I D,pulse I AS E AS V GS T C=25 C T C=25 C I D=90 A, R GS=25 mJ V J-STD20 and JESD22 Rev. 1.0 page 1 2007-12-11 IPD038N04N G Maximum ratings, at T j=25 C, unless otherwise specified Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Symbol Conditions P tot T j, T stg T C=25 C Value 94 -55 ... 175 55/175/56 Unit W C Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm cooling area 4) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=45 A V DS=40 V, V GS=0 V, T j=25 C V DS=40 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 2) 3) 4) - - 1.6 75 50 K/W 40 2 - 0.1 4 1 V A - 10 10 3.2 1.6 110 100 100 3.8 nA m S I GSS R DS(on) RG g fs V GS=20 V, V DS=0 V V GS=10 V, I D=90 A |V DS|>2|I D|R DS(on)max, I D=90 A 55 See figure 3 for more detailed information See figure 13 for more detailed information 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 2 2007-12-11 IPD038N04N G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 5) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total, sync. FET Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T C=25 C V GS=0 V, I F=90 A, T j=25 C V R=20 V, I F=I S, di F/dt =400 A/s 0.96 78 400 1.2 V A Q gs Q g(th) Q gd Q sw Qg V plateau Q g(sync) Q oss V DS=0.1 V, V GS=0 to 10 V V DD=20 V, V GS=0 V V DD=20 V, I D=30 A, V GS=0 to 10 V 18 10 5.3 12 42 5.1 40 36 56 V nC nC C iss C oss Crss t d(on) tr t d(off) tf V DD=20 V, V GS=10 V, I D=30 A, R G=1.6 V GS=0 V, V DS=20 V, f =1 MHz 3400 980 36 17 4.2 20 5.2 4500 1300 ns pF Values typ. max. Unit Reverse recovery charge Q rr - 62 - nC 5) See figure 16 for gate charge parameter definition Rev. 1.0 page 3 2007-12-11 IPD038N04N G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 100 100 80 80 60 60 P tot [W] 40 I D [A] 40 20 20 0 0 50 100 150 200 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 limited by on-state resistance 1 s 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 10 10 s 102 100 s DC 1 0.5 101 1 ms Z thJC [K/W] I D [A] 0.2 0.1 10 ms 0.1 10 0 0.05 0.02 0.01 single pulse 10-1 10-1 100 101 102 0.01 0 0 0 0 0 0 1 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.0 page 4 2007-12-11 IPD038N04N G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 300 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 10 250 10 V 8 200 7V R DS(on) [m] 6.5 V 6 5.5 V 6V 6.5 V I D [A] 150 6V 4 7V 10 V 100 50 5.5 V 2 5V 0 0 1 2 3 0 0 20 40 60 80 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 300 8 Typ. forward transconductance g fs=f(I D); T j=25 C 150 250 125 200 100 150 g fs [S] 175 C 25 C I D [A] 75 100 50 50 25 0 0 2 4 6 8 0 0 20 40 60 80 100 V GS [V] I D [A] Rev. 1.0 page 5 2007-12-11 IPD038N04N G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=90 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=250 A 8 4 6 3 R DS(on) [m] 98 % 4 typ V GS(th) [V] 100 140 180 2 2 1 0 -60 -20 20 60 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 103 1000 25 C, 98% Ciss 175 C, 98% 10 2 100 Coss 175 C 25 C C [pF] 101 Crss I F [A] 10 100 0 10 20 30 40 1 0.0 0.5 1.0 1.5 2.0 V DS [V] V SD [V] Rev. 1.0 page 6 2007-12-11 IPD038N04N G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=30 A pulsed parameter: V DD 12 25 C 100 C 20 V 10 8 150 C 8V 32 V 10 V GS [V] 100 101 102 103 I AV [A] 6 4 2 1 10-1 0 0 8 16 24 32 40 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 45 V GS Qg 40 V BR(DSS) [V] 35 30 V g s(th) 25 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 20 T j [C] Rev. 1.0 page 7 2007-12-11 IPD038N04N G Package Outline PG-TO252-3 Footprint: Packaging: Rev. 1.0 page 8 2007-12-11 IPD038N04N G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 9 2007-12-11 |
Price & Availability of IPD038N04NG
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |