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SGW25N120
Fast IGBT in NPT-technology
* 40% lower Eoff compared to previous generation * Short circuit withstand time - 10 s * Designed for: - Motor controls - Inverter - SMPS * NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability * Qualified according to JEDEC1 for target applications * Pb-free lead plating; RoHS compliant * Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGW25N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Gate-emitter voltage Avalanche energy, single pulse IC = 25A, VCC = 50V, RGE = 25, start at Tj = 25C Short circuit withstand time2 VGE = 15V, 100V VCC 1200V, Tj 150C Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -55...+150 260 C Ptot 313 W tSC 10 s VGE EAS 20 130 V mJ ICpuls Symbol VCE IC 46 25 84 84 Value 1200 Unit V A VCE 1200V IC 25A Eoff 2.9mJ Tj 150C Marking Package
C
G
E
PG-TO-247-3
SGW25N120 PG-TO-247-3
1 2
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.5 Nov. 09
Power Semiconductors
SGW25N120
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V, I C = 15 00 A VCE(sat) V G E = 15V, I C = 25A T j = 25 C T j = 15 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 10 00 A , VCE=VGE V C E =1200V,V G E =0V T j = 25 C T j = 15 0 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
1)
Symbol RthJC RthJA
Conditions
Max. Value 0.4 40
Unit K/W
Symbol
Conditions
Value min. 1200 typ. max. -
Unit
V
2.5 3
3.1 3.7 4
3.6 4.3 5 A
-
20
350 1400 100 2600 190 130 300 nC nH A nA S pF
IGES gfs Ciss Coss Crss QGate LE IC(SC)
V C E =0V,V GE =20V V C E = 20V, I C = 25A V C E = 25V, V G E = 0V, f= 1 M Hz V C C = 9 60V, I C = 25A V G E = 1 5V
-
2150 160 110 225 13 240
V G E = 1 5V,t S C 10s 100V V C C 1200V, T j 150 C
-
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.5 Nov. 09
Power Semiconductors
SGW25N120
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 25 C, V C C = 8 00V, I C = 25A, V G E = 1 5V/ 0 V, R G = 2 2 , 1) L = 180nH, 1) C = 4 0 pF Energy losses include "tail" and diode reverse recovery. 45 40 730 30 2.2 1.5 3.7 60 52 950 39 2.9 2.0 4.9 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 15 0 C V C C = 8 00V, I C = 25A, V G E = 1 5V/ 0 V, R G = 2 2 , L 1 ) = 180nH, C 1 ) = 4 0 pF Energy losses include "tail" and diode reverse recovery. 50 36 820 42 3.8 2.9 6.7 60 43 990 50 4.6 3.8 8.4 mJ ns Symbol Conditions Value min. typ. max. Unit
1)
Leakage inductance L and stray capacity C due to dynamic test circuit in figure E.
Power Semiconductors
3
Rev. 2.5
Nov. 09
SGW25N120
100A
Ic
100A
tp=1s 15s
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
80A
10A
50s 200s 1ms
60A
TC=80C
40A TC=110C 20A
1A DC 0.1A
Ic
0A 10Hz
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 22)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
350W 300W 250W 200W 150W 100W 50W 0W 25C
60A
50A
IC, COLLECTOR CURRENT
50C 75C 100C 125C
POWER DISSIPATION
40A
30A
Ptot,
20A
10A
0A 25C
50C
75C
100C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
Power Semiconductors
4
Rev. 2.5
Nov. 09
SGW25N120
80A 70A 60A 80A 70A 60A
IC, COLLECTOR CURRENT
50A 40A 30A 20A 10A 0A 0V
15V 13V 11V 9V 7V
IC, COLLECTOR CURRENT
V G E =17V
V G E =17V 15V 13V 11V 9V 7V
50A 40A 30A 20A 10A 0A 0V
1V
2V
3V
4V
5V
6V
7V
1V
2V
3V
4V
5V
6V
7V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C)
70A 60A
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
80A
6V
5V
IC=50A
IC, COLLECTOR CURRENT
50A 40A 30A 20A 10A 0A 3V
4V IC=25A IC=12.5A
Tj=+150C Tj=+25C Tj=-40C
3V
2V
1V
4V
5V
6V
7V
8V
9V
10V 11V
0V -50C
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 20V)
Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Rev. 2.5
Nov. 09
SGW25N120
1000ns td(off)
1000ns
td(off)
t, SWITCHING TIMES
100ns
tf
t, SWITCHING TIMES
100ns tf tr td(on)
td(on)
tr
10ns
0A
20A
40A
60A
10ns 0
10
20
30
40
50
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 22, dynamic test circuit in Fig.E )
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, IC = 25A, dynamic test circuit in Fig.E )
6V
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
1000ns td(off)
5V max.
t, SWITCHING TIMES
4V
100ns td(on) tr tf 10ns -50C
3V
typ.
2V
min.
1V
0C
50C
100C
150C
0V -50C
0C
50C
100C
150C
Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 25A, RG = 22, dynamic test circuit in Fig.E )
Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA)
Power Semiconductors
6
Rev. 2.5
Nov. 09
SGW25N120
25mJ
*) Eon and Ets include losses due to diode recovery.
10mJ
Ets*
*) Eon and Ets include losses due to diode recovery.
Ets*
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
20mJ
8mJ
15mJ
Eon*
6mJ Eon* 4mJ Eoff
10mJ Eoff 5mJ
2mJ
0mJ
0A
20A
40A
60A
0mJ
0
10
20
30
40
50
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 22, dynamic test circuit in Fig.E )
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, IC = 25A, dynamic test circuit in Fig.E )
8mJ
*) Eon and Ets include losses due to diode recovery.
6mJ
ZthJC, TRANSIENT THERMAL IMPEDANCE
Ets*
D=0.5
E, SWITCHING ENERGY LOSSES
-1 10 K/W 0.2
0.1 0.05
4mJ
Eon*
2mJ
Eoff
10 K/W 0.02 0.01
-2
R,(K/W) 0.07417 0.20899 0.08065 0.03681
R1
, (s) 0.4990 0.08994 0.00330 0.00038
R2
0mJ -50C
0C
50C
100C
150C
10 K/W 1s
-3
single pulseC 1 = 1 /R 1 C 2 = 2 /R 2 10s 100s 1ms 10ms 100ms 1s
Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 25A, RG = 22, dynamic test circuit in Fig.E )
tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T)
Power Semiconductors
7
Rev. 2.5
Nov. 09
SGW25N120
20V
Ciss
VGE, GATE-EMITTER VOLTAGE
15V
10V
UCE=960V
5V Coss 0V 0nC 100pF 0V Crss 10V 20V 30V
100nC
200nC
300nC
QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 25A)
C, CAPACITANCE IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
1nF
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz)
30s
500A
tsc, SHORT CIRCUIT WITHSTAND TIME
25s
400A
20s
300A
15s
200A
10s
5s
100A
0s 10V
11V
12V
13V
14V
15V
0A 10V
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 1200V, start at Tj = 25C)
VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100VVCE 1200V, TC = 25C, Tj 150C)
Power Semiconductors
8
Rev. 2.5
Nov. 09
SGW25N120
PG-TO247-3
Power Semiconductors
9
Rev. 2.5
Nov. 09
SGW25N120
i,v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =180nH, and stray capacity C =40pF.
Power Semiconductors
10
Rev. 2.5
Nov. 09
SGW25N120
Edition 2006-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 11/19/09. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
11
Rev. 2.5
Nov. 09

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