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| MMBTA92LT1G, MMBTA93LT1G High Voltage Transistors PNP Silicon Features http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current -- Continuous Symbol VCEO VCBO VEBO IC 92 -300 -300 -5.0 -500 93 -200 -200 -5.0 Unit Vdc Vdc Vdc mAdc DEVICE MARKING MMBTA92LT1 = 2D; MMBTA93LT1 = 2E MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation (Note 2) Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C SOT-23 (TO-236AF) CASE 318 STYLE 6 2x M G 2x MG G = Specific Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBTA92LT1G MMBTA92LT3G MMBTA93LT1G Package SOT-23 (Pb-Free) Shipping 3000 / Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. SOT-23 10000 / Tape & Reel (Pb-Free) SOT-23 (Pb-Free) 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2010 July, 2010 - Rev. 8 1 Publication Order Number: MMBTA92LT1/D MMBTA92LT1G, MMBTA93LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (Note 3) (IC = -1.0 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = -100 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = -100 mAdc, IC = 0) Collector Cutoff Current (VCB = -200 Vdc, IE = 0) (VCB = -160 Vdc, IE = 0) Emitter Cutoff Current (VEB = -3.0 Vdc, IC = 0) MMBTA92 MMBTA93 MMBTA92 MMBTA93 MMBTA92 MMBTA93 V(BR)CEO Vdc -300 -200 -300 -200 -5.0 - - Vdc - - - Vdc mAdc V(BR)CBO V(BR)EBO ICBO - - - -0.25 -0.25 -0.1 IEBO mAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) (IC = -30 mAdc, VCE = -10 Vdc) Collector -Emitter Saturation Voltage (IC = -20 mAdc, IB = -2.0 mAdc) Base-Emitter Saturation Voltage (IC = -20 mAdc, IB = -2.0 mAdc) Both Types Both Types MMBTA92 MMBTA93 MMBTA92 MMBTA93 VCE(sat) hFE - 25 40 25 25 - - - - - - - Vdc -0.5 -0.5 -0.9 Vdc VBE(sat) SMALL-SIGNAL CHARACTERISTICS Current -Gain -- Bandwidth Product (IC = -10 mAdc, VCE = -20 Vdc, f = 100 MHz) Collector-Base Capacitance (VCB = -20 Vdc, IE = 0, f = 1.0 MHz) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. MMBTA92 MMBTA93 fT Ccb 50 - MHz pF - - 6.0 8.0 300 250 h FE , DC CURRENT GAIN 200 25C 150 -55C 100 50 0 0.1 1.0 IC, COLLECTOR CURRENT (mA) 10 100 TJ = +125C VCE = 10 Vdc Figure 1. DC Current Gain http://onsemi.com 2 MMBTA92LT1G, MMBTA93LT1G 100 Cib @ 1MHz f T, CURRENT-GAIN -- BANDWIDTH (MHz) 150 130 110 90 70 50 30 10 1 3 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) TJ = 25C VCE = 20 Vdc F = 20 MHz 17 19 21 C, CAPACITANCE (pF) 10 Ccb @ 1MHz 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance Figure 3. Current-Gain - Bandwidth 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 VCE(sat) @ 25C, IC/IB = 10 VCE(sat) @ 125C, IC/IB = 10 VCE(sat) @ -55C, IC/IB = 10 VBE(sat) @ 25C, IC/IB = 10 VBE(sat) @ 125C, IC/IB = 10 VBE(sat) @ -55C, IC/IB = 10 VBE(on) @ 25C, VCE = 10 V VBE(on) @ 125C, VCE = 10 V VBE(on) @ -55C, VCE = 10 V Figure 4. "ON" Voltages 1 IC, COLLECTOR CURRENT (A) 0.1 1.0 s 0.01 10 ms 0.001 1 10 100 1000 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 5. Safe Operating Area http://onsemi.com 3 MMBTA92LT1G, MMBTA93LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE q MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 D SEE VIEW C 3 E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 4 MMBTA92LT1/D |
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