Part Number Hot Search : 
P94612I 11007 S3BR15 MBT39 TGA8310 BH16NRSZ MAZD110G TC141
Product Description
Full Text Search
 

To Download BSS806N Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 BSS806N
OptiMOSTM2 Small-Signal-Transistor
Features * N-channel * Enhancement mode * Ultra Logic level (1.8V rated) * Avalanche rated * Qualified according to AEC Q101 * 100% lead-free; RoHS compliant
Product Summary V DS R DS(on),max V GS=2.5 V V GS=1.8 V ID 20 57 82 2.3 A V m
PG-SOT23
3
1 2
Type BSS806N
Package SOT23
Tape and Reel Information L6327: 3000 pcs/ reel
Marking YEs
Lead Free Yes
Packing Non dry
Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 C T A=70 C Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 C I D=2.3 A, R GS=25 I D=2.3 A, V DS=16 V, di /dt =200 A/s, T j,max=150 C Value 2.3 1.9 9.3 10.8 mJ Unit A
Reverse diode dv /dt Gate source voltage Power dissipation1) Operating and storage temperature ESD Class Soldering Temperature IEC climatic category; DIN IEC 68-1
dv /dt V GS P tot T j, T stg
6 8
kV/s V W C
T A=25 C
0.5 -55 ... 150
JESD22-A114 -HBM
0(<250V) 260 C 55/150/56
Rev 2.2
page 1
2010-03-25
BSS806N
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - ambient R thJA
1)
Values typ. max.
Unit
minimal footprint
-
-
250
K/W
Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current V (BR)DSS V GS= 0 V, I D= 250 A V GS(th) I DSS V DS=VGS , I D=11 A V DS=20 V, V GS=0 V, T j=25 C V DS=20 V, V GS=0 V, T j=150 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=8 V, V DS=0 V V GS=1.8 V, I D=1.3 A V GS=2.5 V, I D=2.3 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=1.9 A 20 0.3 0.55 0.75 1 A V
-
57 41 9
100 100 82 57 S nA m
1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70m thick and 20mm long; they are present on both sides of the PCB.
Rev 2.2
page 2
2010-03-25
BSS806N
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr T A=25 C V GS=0 V, I F=2.3 A, T j=25 C V R=10 V, I F=2.3 A, di F/dt =100 A/s 0.82 11 3.3 0.5 9.3 1.1 V ns nC A Q gs Q gd Qg V plateau V DD=10 V, I D=2.3 A, V GS=0 to 2.5 V 0.55 0.58 1.7 1.5 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=10 V, V GS=2.5 V, I D=2.3A, R G=6 V GS=0 V, V DS=10 V, f =1 MHz 370 118 20 7.5 9.9 12.0 3.7 529 169 29 ns pF Values typ. max. Unit
Rev 2.2
page 3
2010-03-25
BSS806N
1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); V GS2.5 V
2.5 0.5 2.0 0.375 1.5
P tot [W]
0.25
I D [A]
1.0 0.5 0.0 0 40 80 120 160 0 20 40 60 80 100 120 140 160
0.125
0
T A [C]
T A [C]
3 Safe operating area I D=f(V DS); T A=25 C; D =0 parameter: t p
102
4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T
103
101
1 ms 10 ms 100 s
10 s
0.5
102
0.2 0.1
Z thJA [K/W]
100
I D [A]
0.05
101
0.02 0.01 single pulse
10
-1
DC
100 10
-2
10-3 10
-1
10-1 10
0
10
1
10
2
10-5
10-4
10-3
10-2
10-1
100
101
102
V DS [V]
t p [s]
Rev 2.2
page 4
2010-03-25
BSS806N
5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS
4
2.5 V 1.8 V 1.6 V
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS
120
1.3 V 1.4 V
100
1.5 V 1.6 V
3 80
1.5 V
R DS(on) [m]
I D [A]
2
60
1.8 V 2V
1.4 V
40
2.5 V
1
1.3 V
20
1.2 V 1.1 V
0 0 1 2 3 4 1.6 2.0
0 0.0 0.4 0.8
V DS [V]
1.2
I D [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max
8 Typ. forward transconductance g fs=f(I D); T j=25 C
4
20
16 3
12 2
g fs [S]
8
150 C 25 C
I D [A]
1 4
0 0.0 0.5 1.0 1.5 2.0
0 0 2 4 6 8
V GS [V]
I D [A]
Rev 2.2
page 5
2010-03-25
BSS806N
9 Drain-source on-state resistance R DS(on)=f(T j); I D=2.3 A; V GS=2.5 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V DS=VGS; I D=11 A parameter: I D
100 1.2
80 0.8
98 % 98 %
R DS(on) [m]
60
V GS(th) [V]
typ
0.4
2%
40
typ
0 20
0 -60 -20 20 60 100 140 180
-0.4 -60 -20 20 60 100 140 180
T j [C]
T j [C]
11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz; Tj=25C
12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j
103
101
Ciss
100
25 C
150 C, 98%
C [pF]
Coss
10
2
I F [A]
10-1
150 C 25 C, 98%
10-2
Crss
101 0 5 10 15 20
10-3 0 0.4 0.8 1.2 1.6
V DS [V]
V SD [V]
Rev 2.2
page 6
2010-03-25
BSS806N
13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start)
101
14 Typ. gate charge V GS=f(Q gate); I D=2.3 A pulsed parameter: V DD
5 4.5 4 3.5
25 C
3 100
100 C
10 V 16 V 4V
V GS [V]
103
I AV [A]
2.5 2 1.5 1 0.5
125 C
10-1 100 101 102
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
t AV [s]
Q gate [nC]
15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 A
16 Gate charge waveforms
25
V GS
24 23 22
Qg
V BR(DSS) [V]
21 20 19 18 17 16 -60 -20 20 60 100 140 180
V g s(th)
Q g(th) Q gs
Q sw Q gd
Q g ate
T j [C]
Rev 2.2
page 7
2010-03-25
BSS806N
SOT23
Package Outline:
Footprint:
Packaging:
Dimensions in mm Rev 2.2 page 8 2010-03-25
BSS806N
Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev 2.2
page 9
2010-03-25


▲Up To Search▲   

 
Price & Availability of BSS806N

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X