View DMN2400UV-13_4963897.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DMN2400UV
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
* * * * * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected up to 2kV Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
* * * * * * Case: SOT-563 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (approximate)
D2
G1
S1
SOT-563
S2
G2
D1
ESD PROTECTED TO 2kV
Top View
Bottom View
Top View Internal Schematic
Ordering Information (Note 3)
Part Number DMN2400UV-7 DMN2400UV-13
Notes:
Case SOT-563 SOT-563
Packaging 3,000/Tape & Reel 10,000/Tape & Reel
1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
24N
YM
24N = Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September)
Date Code Key Year Code Month Code
2009 W Jan 1 Feb 2
2010 X Mar 3 Apr 4
2011 Y May 5 Jun 6
2012 Z Jul 7
2013 A Aug 8 Sep 9
2014 B Oct O Nov N
2015 C Dec D
DMN2400UV
Document number: DS31852 Rev. 6 - 2
1 of 6 www.diodes.com
January 2011
(c) Diodes Incorporated
DMN2400UV
Maximum Ratings @TA = 25C unless otherwise specified
Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) Pulsed Drain Current Steady State TA = 25C TA = 85C Symbol VDSS VGSS ID IDM Value 20 12 1.33 0.84 3 Units V V A A
Thermal Characteristics
@TA = 25C unless otherwise specified Symbol PD RJA TJ, TSTG Value 530 233.8 -55 to +150 Units mW C/W C
Characteristic Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Electrical Characteristics @TA = 25C unless otherwise specified
Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol BVDSS IDSS IGSS VGS(th) Min 20 0.5 Typ 0.3 0.35 0.45 0.55 0.65 1.4 0.7 36.0 5.7 4.2 68 0.5 0.07 0.1 4.06 7.28 13.74 10.54 Max 100 1.0 50 0.9 0.48 0.5 0.7 0.9 1.5 1.2 Unit V nA A V Test Condition VGS = 0V, ID = 250A VDS = 20V, VGS = 0V VGS = 4.5V, VDS = 0V VGS = 10V, VDS = 0V VDS = VGS, ID = 250A VGS = 5.0V, ID = 200mA VGS = 4.5V, ID = 600mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VGS = 1.5V, ID = 50mA VDS = 10V, ID = 400mA VGS = 0V, IS = 150mA, f = 1.0MHz
Static Drain-Source On-Resistance
RDS (ON)
Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Notes:
|Yfs| VSD Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf
S V pF pF pF nC nC nC ns ns ns ns
VDS =16V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, VGS =4.5V, VDS = 10V, ID =250mA
VDD = 10V, VGS = 4.5V, RL = 47, RG = 10, ID = 200mA
4. Device soldered onto FR-4 PCB, minimum recommended soldering pad dimensions (25.4mm x 25.4mm x1.6mm, 2oz Cu pad: 0.18mm2 x 6). 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to product testing.
DMN2400UV
Document number: DS31852 Rev. 6 - 2
2 of 6 www.diodes.com
January 2011
(c) Diodes Incorporated
DMN2400UV
2.0
VGS = 4.5V VGS = 2.5V VGS = 2.0V
1.5
VDS = 5V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
1.5
1.0
VGS = 1.8V
1.0
0.5
T A = 150C TA = 125C T A = 85C TA = 25C TA = -55C
0.5
VGS = 1.5V
0 0
VGS = 1.2V
0
5
1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics
0
0.5 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics
3
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
2.0
0.8
VGS = 4.5V
1.6
0.6
TA = 150C
1.2
VGS = 1.5V
0.4
T A = 125C TA = 85C TA = 25C
0.8
VGS = 1.8V VGS = 2.5V
0.2
0.4
VGS = 5.0V VGS = 4.5V
TA = -55C
0 0
0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage
2
0 0 0.4 0.8 1.2 1.6 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)
1.4
VGS = 4.5V ID = 1.0A
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
1.6
0.8
0.6
1.2
VGS = 2.5.V ID = 500mA
0.4
VGS = 2.5V ID = 500mA
1.0
0.2
0.8
VGS = 4.5V ID = 1.0A
0.6 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature
0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature
DMN2400UV
Document number: DS31852 Rev. 6 - 2
3 of 6 www.diodes.com
January 2011
(c) Diodes Incorporated
DMN2400UV
1.2 VGS(TH), GATE THRESHOLD VOLTAGE (V)
1.6
1.0
IS, SOURCE CURRENT (A)
1.2
T A = 25C
0.8
ID = 250A
ID = 1mA
0.6
0.8
0.4
0.4
0.2
0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0 -50
-25
0 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2
IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)
60
1,000
TA = 150C
50 C, CAPACITANCE (pF)
f = 1MHz
100
T A = 125C
40
Ciss
30
10
T A = 85C
20
1
TA = -55C TA = 25C
10 0 0
Coss C rss
0.1 2 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage 4
5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance
20
5
VGS, GATE-SOURCE VOLTAGE (V)
4
VDS = 10V ID = 250mA
3
2
1
0
0
0.1 0.2 0.3 0.4 0.5 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics
0.6
DMN2400UV
Document number: DS31852 Rev. 6 - 2
4 of 6 www.diodes.com
January 2011
(c) Diodes Incorporated
DMN2400UV
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
0.1
D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 221C/W P(pk) D = 0.005 D = Single Pulse
D = 0.02
0.01
D = 0.01
t1
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 /t2
0.001 0.00001
0.0001
0.001
0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response
10
100
1,000
Package Outline Dimensions
A
B
C
D G
K
M
SOT-563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm
H L
Suggested Pad Layout
C2
C2
Z
G
C1
Y X
Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5
DMN2400UV
Document number: DS31852 Rev. 6 - 2
5 of 6 www.diodes.com
January 2011
(c) Diodes Incorporated
DMN2400UV
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2010, Diodes Incorporated www.diodes.com
DMN2400UV
Document number: DS31852 Rev. 6 - 2
6 of 6 www.diodes.com
January 2011
(c) Diodes Incorporated

▲Up To Search▲

Price & Availability of DMN2400UV-13

	To Download DMN2400UV-13 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .