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 ESD5V3S1U-02LRH
Silicon TVS Diode * ESD / transient protection of data and power lines in low voltage applications according to: IEC61000-4-2 (ESD): 25 kV (air) 20 kV (contact) IEC61000-4-4 (EFT): 50 A / 2.5 kV (5/50 ns) IEC61000-4-5 (surge): 5.5 A / 66 W (8/20 s) * Small form factor (0402 inch): 1.0 x 0.6 x 0.4 mm3 * Uni-directional, working voltage up to 5.3 V * Ultralow clamping voltage, protects against both positive and negative ESD strikes * Ultralow dynamic resistance 0.27 * Very fast response time * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Applications * Digital interfaces (medium speed) * Vcc protection * Keypad, trackball protection, camera, displays in: mobile communications (smartphone, camera phone & added functions e.g. mobile TV) * Digital consumer & computer electronics: laptops, PC, laserjet printer, photo printer, scanner, input devices (mouse, keyboard, remote control ...) * Industrial: security systems, sensors, white goods.
ESD5V3S1U-02LRH
1
2
Type ESD5V3S1U-02LRH
Package TSLP-2-17
Configuration 1 line, uni-directional
1
Marking E2
2009-12-07
ESD5V3S1U-02LRH
Maximum Ratings at TA = 25C, unless otherwise specified Parameter Symbol VESD I pp Ppk T op T stg Value Unit
ESD air / contact discharge 1) Peak pulse current (tp = 8 / 20 s)2) Peak pulse power (tp = 8 / 20 s2) Operating temperature range Storage temperature
25 / 20 5.5 66 -55...125 -65...150
kV A W C
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. Characteristics typ. max.
Unit
Reverse working voltage Breakdown voltage
I(BR) = 1 mA
VRWM V(BR) IR VCL
5.7 -
-
5.3 0.1
V
Reverse current
VR = 3.3 V
A V
Clamping voltage
IPP = 1 A, tp = 8/20 s2) IPP = 3.5 A, tp = 8/20 s 2) IPP = 5.5 A, tp = 8/20 s 2)
VFC
7 8 9 1.2 2 2.5 35 20 0.27
9 10 11 2 3 3.5 pF 40
Forward clamping voltage
IPP = 1 A, tp = 8/20 s2) IPP = 3.5 A, tp = 8/20 s 2) IPP = 5.5 A, tp = 8/20 s 2)
CT
Diode capacitance
VR = 0 V, f = 1 MHz VR = 2.5 V, f = 1 MHz
RD
Dynamic resistance3) (tp = 30 ns)
1V 2I 3
-
ESD according to IEC61000-4-2
pp according to IEC61000-4-5
according to TLP tests
2
2009-12-07
ESD5V3S1U-02LRH
Power derating curve Ppk = (TA) Clamping voltage, V cl = (Ipp) tp = 8 / 20 s
110
% V
11
90
Ppk or Ipp
80
60 8 50 40 30 20 10 0 0 25 50 75 100
C
V cl
7 6 5 0
70
9
150
1
2
3
4
A
6
TA
I pp
Forward clamping voltage VFC = (IPP) tp = 8 / 20 s
4
V
Reverse current IR = (TA) VR = 3.3 V
10 -6
A
3
VFC
10 -7
2
1.5
IR
10 -8
A
2.5
1
0.5 10 -9 -75
0 0
1
2
3
4
5
6
7
9
-50
-25
0
25
50
75
100 C
150
Ipp
TA
3
2009-12-07
ESD5V3S1U-02LRH
Breakdown voltage V BR = (TA) IR = 1 mA
7.5
V
Diode capacitance CT = (VR) f = 1MHz
40
pF
7
30
V BR
6.75
CT
100 C
25
6.5
20
6.25
15
6
10
5.75
5
5.5 -75
-50
-25
0
25
50
75
150
0 0
1
2
3
4
V
6
TA
VR
4
2009-12-07
ESD5V3S1U-02LRH
Application example single channel, uni-directional
Connector 1
Protected signal line
I/O
2
The protection diode should be placed very close to the location where the ESD can occur to keep loops and inductances as small as possible.
ESD sensitive device
5
2009-12-07
TSLP-2-17 (mm)
ESD5V3S1U-02LRH
Package Outline
Top view
0.39 +0.01 -0.03 0.05 MAX.
0.65 0.05
Bottom view
0.6 0.05
2
2 1
1
Cathode marking
0.5 0.035 1)
1) Dimension applies to plated terminal
Foot Print
For board assembly information please refer to Infineon website "Packages"
0.35
0.45
0.3 0.925
1
0.275 0.275 0.375
0.6
Copper
Solder mask
0.35
Stencil apertures
Marking Layout (Example)
BAR90-02LRH Type code
Cathode marking Laser marking
Standard Packing
Reel o180 mm = 15.000 Pieces/Reel Reel o330 mm = 50.000 Pieces/Reel (optional)
4
1.16
0.5
Cathode marking
0.76
8
0.25 0.035 1)
10.05
6
2009-12-07
ESD5V3S1U-02LRH
Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( ).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
7
2009-12-07


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