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EPC1111H J13007 39LF020 2N7012 00226 4C15F A6040 SST25W
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  Datasheet File OCR Text:
 Shantou Huashan Electronic Devices Co.,Ltd.
NPN DARLINGTON TRANSISTOR
HP142TSW
APPLICATIONS
High DC Current Gain ABSOLUTE MAXIMUM RATINGS a=25ae(c) T
T stg Storage Temperature---------- 55~150ae T j Junction Temperature-----------150ae PCCollector Dissipation c=25ae T (c)-------70W VCBO Collector-Base Voltage----------100V VCEOCollector-Emitter Voltage---------100V VEBO Emitter-Base Voltage-----------5V ICCollector Current DC(c)-----------8A IBBase Current----------------0.5A TO-263
1D Base B
2D Collector C 3D Emitter, E
ELECTRICAL CHARACTERISTICS a=25ae(c) T
Symbol Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current Collector Cutoff Current Emitter-Base Cutoff Current Min 100 2 1 2 Typ Max Unit V mA mA mA Test Conditions
BVCEO(SUS) ICEO ICBO IEBO HFE 1(c) HFE 2(c) VCE(sat1) VCE(sat2) VBE(sat) VBE(on) tD tR tS tF
IC=30mA, IB=0 VCE=50V, IB=0 VCB=100V, IE=0 VEB=5V, IC=0 VCE=4V, IC=0.5A VCE=4V, IC=3A
DC Current Gain Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage Base- Emitter On Voltage Deiay time Rise Time Storage Time Fall Time
1000 1000 2 3 3.5 3 0.15 0.55 2.5 2.5 V V V V uS uS uS uS
IC=5A, IB =10mA IC=10A, IB =40mA IC=10A, IB =40mA VCE=4V,IC=10A, Vcc=30V,Ic=5A IB1=20mA IB2=-20mA
Shantou Huashan Electronic Devices Co.,Ltd.
NPN DARLINGTON TRANSISTOR
HP142TSW


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