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| New Product SIZ700DT Vishay Siliconix N-Channel 20-V (D-S) MOSFETs PRODUCT SUMMARY VDS (V) Channel-1 20 RDS(on) () 0.0086 at VGS = 10 V 0.0108 at VGS = 4.5 V 0.0058 at VGS = 10 V 0.0066 at VGS = 4.5 V ID (A) 16a 16a 16a 16a Qg (Typ.) 9.5 nC FEATURES * Halogen-free According to IEC 61249-2-21 Definition * TrenchFET(R) Power MOSFETs * 100 % Rg Tested * Compliant to RoHS Directive 2002/95/EC Channel-2 20 27 nC APPLICATIONS * Notebook System Power * POL VIN/D1 PowerPAIRTM 6 x 3.7 Pin 1 G1 1 2 D1 3 D1 3.73 mm 1 D1 GHS VIN 2 VIN GLS GND 6 5 GND 4 VSW GLS/G2 N-Channel 2 MOSFET GND/S2 3 VIN GHS/G1 N-Channel 1 MOSFET VSW/S1/D2 G2 6 S2 5 S1/D2 S2 4 6.00 mm Ordering Information: SIZ700DT-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C TC = 70 C TA = 25 C TA = 70 C TC = 25 C TA = 25 C TC = 25 C TC = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS Channel-1 20 16 16a 16a 13.1b, c 10.5b, c 60 14.7 1.96 2.36 1.5 b, c Channel-2 20 16a 16a 17.3b, c 13.9b, c 60 16a 2.3b, c 2.8 1.78 1.47b, c 0.94b, c Unit V Continuous Drain Current (TJ = 150 C) Pulsed Drain Current Source Drain Current Diode Current A Maximum Power Dissipation PD TJ, Tstg 1.4b, c 0.9b, c - 55 to 150 260 W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e C THERMAL RESISTANCE RATINGS Channel-1 Parameter b, f Channel-2 Typ. 33 3.7 Max. 45 4.6 Unit Maximum Junction-to-Ambient C/W Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 90 C/W for Channel-1 and 85 C/W for Channel-2. Document Number: 69090 S09-0534-Rev. A, 06-Apr-09 www.vishay.com 1 t 10 s Symbol RthJA RthJC Typ. 39 5.7 Max. 53 7.1 New Product SIZ700DT Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 A VGS = 0 V, ID = 250 A ID = 250 A ID = 250 A ID = 250 A ID = 250 A VDS = VGS, ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 16 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 C VDS = 20 V, VGS = 0 V, TJ = 55 C On-State Drain Currentb ID(on) VDS 5 V, VGS = 10 V VDS 5 V, VGS = 10 V VGS = 10 V, ID = 15 A Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 10 A VGS = 4.5 V, ID = 15 A Forward Transconductanceb Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss Channel-2 VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 15 A Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 20 A Channel-1 VDS = 10 V, VGS = 4.5 V, ID = 15 A Gate-Source Charge Gate-Drain Charge Gate Resistance Qgs Qgd Rg Channel-2 VDS = 10 V, VGS = 4.5 V, ID = 20 A f = 1 MHz Ch-1 Channel-1 VDS = 10 V, VGS = 0 V, f = 1 MHz Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 0.3 0.2 1300 3860 290 760 132 350 20 55 9.5 27 3.2 9.2 2.4 7.1 1.3 1.0 2.6 2.0 35 85 15 45 nC pF gfs VDS = 10 V, ID = 15 A VDS = 10 V, ID = 20 A Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 30 30 0.007 0.0086 0.0047 0.0058 0.0088 0.0108 0.0054 0.0066 60 100 S 0.8 0.8 20 20 21 21 - 5.8 - 5.8 2.2 2.2 100 100 1 1 10 10 A A V nA mV/C V Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 s, duty cycle 2 %. www.vishay.com 2 Document Number: 69090 S09-0534-Rev. A, 06-Apr-09 New Product SIZ700DT Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb Channel-1 IF = 2.0 A, dI/dt = 100 A/s, TJ = 25 C Channel-2 IF = 2.3 A, dI/dt = 100 A/s, TJ = 25 C IS = 2.0 A, VGS = 0 V IS = 2.3 A, VGS = 0 V TC = 25 C Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 0.8 0.8 25 40 13 31 12 21 13 19 ns 14.7 16 60 60 1.2 1.2 50 80 25 60 V ns nC A td(on) tr td(off) tf td(on) tr td(off) tf Ch-1 Channel-1 VDD = 10 V, RL = 10 ID 1.0 A, VGEN = 4.5 V, Rg = 1 Channel-2 VDD = 10 V, RL = 10 ID 1.0 A, VGEN = 4.5 V, Rg = 1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Channel-1 VDD = 10 V, RL = 10 ID 1.0 A, VGEN = 10 V, Rg = 1 Channel-2 VDD = 10 V, RL = 10 ID 1.0 A, VGEN = 10 V, Rg = 1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 9 13 8 8 25 52 8 15 8 12 9 8 25 47 8 10 15 20 15 15 40 80 15 25 15 20 15 15 40 75 15 15 ns Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 69090 S09-0534-Rev. A, 06-Apr-09 www.vishay.com 3 New Product SIZ700DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 60 VGS = 10 V thru 4 V I D - Drain Current (A) I D - Drain Current (A) 45 VGS = 3 V 1.2 1.0 0.8 30 0.6 0.4 TC = 25 C 0.2 TC = 125 C TC = - 55 C 15 0 0.0 0.3 0.6 0.9 1.2 1.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.016 1800 Transfer Characteristics 1500 R DS(on) - On-Resistance () C - Capacitance (pF) 0.012 VGS = 4.5 V 0.008 VGS = 10 V 0.004 300 Crss 0.000 0 15 30 ID - Drain Current (A) 45 60 0 0 5 10 15 20 Ciss 1200 900 600 Coss VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 15 A VGS - Gate-to-Source Voltage (V) 8 VDS = 10 V 6 VDS = 5 V VDS = 15 V 4 R DS(on) - On-Resistance 1.5 (Normalized) 1.8 ID = 15 A Capacitance VGS = 10 V 1.2 VGS = 4.5 V 0.9 2 0 0 5 10 15 20 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge www.vishay.com 4 On-Resistance vs. Junction Temperature Document Number: 69090 S09-0534-Rev. A, 06-Apr-09 New Product SIZ700DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 0.030 0.025 I S - Source Current (A) TJ = 150 C 1 TJ = 25 C R DS(on) - On-Resistance () 10 0.020 0.015 TJ = 125 C 0.010 0.1 TJ = - 50 C 0.01 0.005 TJ = 25 C 0.001 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.5 60 On-Resistance vs. Gate-to-Source Voltage 0.2 VGS(th) Variance (V) 50 40 ID = 5 mA - 0.4 ID = 250 A 10 - 1.0 -50 Power (W) - 0.1 30 20 - 0.7 0 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (s) 1 10 TJ - Temperature (C) Threshold Voltage 100 Limited by RDS(on)* Single Pulse Power 10 s 10 I D - Drain Current (A) 100 s 1 ms 1 10 ms 100 ms 1 s, 10 s 0.1 TA = 25 C Single Pulse BVDSS Limited 0.01 0.1 100 s, DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 69090 S09-0534-Rev. A, 06-Apr-09 www.vishay.com 5 New Product SIZ700DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 40 I D - Drain Current (A) 30 20 Package Limited 10 0 0 25 50 75 100 125 150 TC - Case Temperature (C) Current Derating* 25 1.76 20 1.32 Power (W) 15 Power (W) 0 25 50 75 100 125 150 0.88 10 0.44 5 0 0.00 0 25 50 75 100 125 150 TC - Case Temperature (C) TA - Ambient Temperature (C) Power, Junction-to-Case Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 69090 S09-0534-Rev. A, 06-Apr-09 New Product SIZ700DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = Notes: 2. Per Unit Base = RthJA = 90 C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 69090 S09-0534-Rev. A, 06-Apr-09 www.vishay.com 7 New Product SIZ700DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 60 VGS = 10 V thru 3 V 1.0 45 I D - Drain Current (A) I D - Drain Current (A) 0.8 1.2 30 0.6 0.4 TC = 25 C 0.2 TC = 125 C TC = - 55 C 0.5 1.0 1.5 2.0 2.5 3.0 15 0 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.010 5000 Ciss R DS(on) - On-Resistance () 0.008 VGS = 4.5 V 0.006 C - Capacitance (pF) 4000 Transfer Characteristics 3000 0.004 VGS = 10 V 2000 Coss 1000 Crss 0.002 0.000 0 15 30 ID - Drain Current (A) 45 60 0 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 20 A VGS - Gate-to-Source Voltage (V) 8 VDS = 10 V VDS = 5 V VDS = 15 V 4 R DS(on) - On-Resistance 1.4 1.6 ID = 20 A Capacitance VGS = 10 V 6 (Normalized) 1.2 VGS = 4.5 V 1.0 2 0.8 0 0 11 22 33 44 55 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge www.vishay.com 8 On-Resistance vs. Junction Temperature Document Number: 69090 S09-0534-Rev. A, 06-Apr-09 New Product SIZ700DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 0.020 I S - Source Current (A) TJ = 150 C 1 TJ = 25 C R DS(on) - On-Resistance () 10 0.015 0.010 TJ = 125 C 0.005 TJ = 25 C 0.000 0.1 TJ = - 50 C 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.5 150 On-Resistance vs. Gate-to-Source 0.2 VGS(th) Variance (V) 120 Power (W) - 0.1 ID = 5 mA - 0.4 ID = 250 A - 0.7 90 60 30 - 1.0 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (s) 1 10 TJ - Temperature (C) Threshold Voltage 100 Limited by RDS(on)* Single Pulse Power 10 s, 100 s 10 I D - Drain Current (A) 1 ms 10 ms 1 100 ms 1s 10 s 0.1 TA = 25 C Single Pulse BVDSS Limited 0.01 0.1 100 s, DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 69090 S09-0534-Rev. A, 06-Apr-09 www.vishay.com 9 New Product SIZ700DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 60 I D - Drain Current (A) 45 30 Package Limited 15 0 0 25 50 75 100 125 150 TC - Case Temperature (C) Current Derating* 40 1.76 32 1.32 Power (W) 24 Power (W) 0.88 16 0.44 8 0 0 25 50 75 100 125 150 0.00 0 25 50 75 100 125 150 TC - Case Temperature (C) TA - Ambient Temperature (C) Power, Junction-to-Case Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 69090 S09-0534-Rev. A, 06-Apr-09 New Product SIZ700DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 PDM Notes: 0.05 t1 t2 1. Duty Cycle, D = t1 t2 0.02 2. Per Unit Base = RthJA = 85 C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 4. Surface Mounted 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.02 Single Pulse 0.05 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69090. Document Number: 69090 S09-0534-Rev. A, 06-Apr-09 www.vishay.com 11 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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