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| PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - JULY 2005 FEATURES * 60 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot= 1 Watt ZTX750 ZTX751 C B E ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation: at Tamb=25C derate above 25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX750 -60 -45 -5 -6 -2 1 5.7 E-Line TO92 Compatible ZTX751 -80 -60 UNIT V V V A A W mW/C C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Switching Times Output Capacitance SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ZTX750 MIN. TYP. -60 -45 -5 -0.1 -0.1 -10 IEBO VCE(sat) VBE(sat) VBE(on) hFE 70 100 80 40 -0.1 -0.15 -0.3 -0.28 -0.5 -0.9 -1.25 -0.8 200 200 170 80 45 800 -1 300 70 100 80 40 -10 -0.1 ZTX751 MAX. MIN. TYP. -80 -60 -5 MAX. UNIT CONDITIONS. V V V A A A A A IC=-100A IC=-10mA IE=-100A VCB=-45V VCB=-60V VCB=-45V,Tamb=100C VCB=-60V,Tamb=100C VEB=-4V IC=-1A, IB=-100mA IC=-2A, IB=-200mA IC=-1A, IB=-100mA IC=-1A, VCE=-2V IC=-50mA, VCE=-2V* IC=-500mA,VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=500mA, VCC=10V IB1=IB2=50mA VCB=10V f=1MHz -0.15 -0.3 V -0.28 -0.5 V -0.9 -1.25 V -0.8 200 200 170 80 45 800 -1 300 V ton toff Cobo 30 30 pF 3-257 ZTX750 ZTX751 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL ZTX750 MIN. TYP. 100 140 40 450 30 ZTX751 MAX. MIN. TYP. 100 140 40 450 30 MAX. UNIT CONDITIONS. Transition Frequency Switching Times fT ton toff MHz ns ns pF IC=-100mA, VCE=-5V f=100MHz IC=-500mA, VCC=-10V IB1=IB2=-50mA VCB=10V f=1MHz Output Capacitance Cobo *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% THERMAL CHARACTERISTICS PARAMETER Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case SYMBOL Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) MAX. 175 116 70 UNIT C/W C/W C/W Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 2.5 200 Max Power Dissipation - (Watts) Thermal Resistance (C/W) D=1 (D.C.) 2.0 t1 D=t1/tP tP C 1.5 as e te m pe 1.0 Am ra 100 D=0.5 bie tu nt t re em 0.5 0 per at u re D=0.2 D=0.1 Single Pulse -40 -20 0 20 40 60 80 100 120 140 160 180 200 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-258 ZTX750 ZTX751 TYPICAL CHARACTERISTICS 0.6 0.5 td tr tf ns 140 IB1=IB2=IC/10 ts ns 700 600 500 400 300 200 100 0 0.1 1 ts td tf tr VCE(sat) - (Volts) 0.4 0.3 0.2 0.1 0 IC/IB=10 120 Switching time 0.0001 0.001 0.01 0.1 1 10 100 80 60 40 20 0 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.4 225 175 VCE=2V 125 1.2 VBE(sat) - (Volts) hFE - Gain 1.0 IC/IB=10 0.8 75 0 0.01 0.1 1 10 0.6 0.0001 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC 10 1.2 VBE(sat) v IC Single Pulse Test at Tamb=25C VBE - (Volts) 1.0 VCE=2V 0.8 IC - Collector Current (Amps) 1 0.6 0.1 D.C. 1s 100ms 10ms 1.0ms 100s 0.4 0.0001 0.001 0.01 0.1 1 10 ZTX750 ZTX751 0.01 0.1 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-259 |
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