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| RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION BAS86 SCHOTTKY DIODES FEATURES * Fast Switching Device(TRR<4.0nS) * Mini MELF Glass Case (SOD-80) * Through-Hole Device Type Mounting * Hermetically Sealed Glass * Compression Bonded Construction * All external surfaces are corrosion resistant and leads are readily solderable SOD-80 .016(0.40) .008(0.20) .059(1.5) .055(1.4) .142(3.6) .134(3.4) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS Maximum Forward Comtinuous Reverse Voltage Maximum Forward Comtinuous Current @ T A =25 OC Maximum Peak Forward Current tp<1s Surge Forward Current @ tp=10ms Maximum Power Dissipation @ T A =65 OC Junction Temperature Storage Temperature Range SYMBOL VR IF IFM IFSM PD TJ TSTG BAS86 50 200 500 5 200 125 -65 to + 150 UNITS V mAmps mAmps Amps mW O o C C O ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Reverse voltage leakage current (VR=40V) (IF=0.1mA) (IF=1mA) Forward voltage Pulse Tesx tp<300s,<2% (IF=10mA) (IF=30mA) (IF=100mA) Diode capacitance (VR=1,f=1MHz) CD VF SYMBOL IR MIN. TYP. MAX. 5 0.30 0.38 0.45 0.60 0.90 8 pF 2006-3 V UNITS A |
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