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| CHENMKO ENTERPRISE CO.,LTD CHM2316PT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CURRENT 4.8 Ampere FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. 1.7~2.1 (2) (3) SC-59/SOT-346 0.95 2.7~3.1 0.95 (1) CONSTRUCTION * N-Channel Enhancement 0.3~0.51 1.2~1.9 0.89~1.3 0.085~0.2 0.3~0.6 2.1~2.95 (1) G CIRCUIT D (3) 0~0.1 S (2) Dimensions in millimeters SC-59/SOT-346 Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted CHM2316PT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous 30 V V 20 4.8 ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range (Note 3) A 20 1250 -55 to 150 -55 to 150 mW C C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 100 C/W 2006-01 RATING CHARACTERISTIC CURVES ( CHM2316PT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = 250 A VDS = 30 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V 30 1.0 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 A VGS=10V, ID=6.0A VGS=4.5V, ID=4.9A 1.0 27 36 8.0 3 34 V m 50 S Forward Transconductance VDS =15V, ID = 6.0A SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q tr toff tf gd Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=15V, ID=6.0A VGS=10V V DD= 15V ID = 5.5A , VGS = 10 V RGEN= 3 12.3 1.5 2.5 9 3 24 4 16 nC ton 20 8 50 10 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current (Note 1) (Note 2) 1.7 1.2 A V Drain-Source Diode Forward Voltage IS = 1.0A , VGS = 0 V RATING CHARACTERISTIC CURVES ( CHM2316PT ) Typical Electrical Characteristics Figure 1. Output Characteristics 40 VGS=9,8,7,6V 40 25 C Figure 2. Transfer Characteristics ID, Drain Current (A) 30 ID, Drain Current (A) 30 20 V GS=4.0V 20 10 10 TJ=125 C -55 C 3.0 4.0 5.0 6.0 0 0 1.0 2.0 3.0 4.0 5.0 0 0 1.0 2.0 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 4. On-Resistance Variation with Temperature RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 ID=6.0A VGS=10V 900 750 Figure 3. Capacitance C, Capacitance (pF) C iss 600 450 300 C oss 150 C rss 0 0 3 6 9 12 15 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 5. Gate Threshold Variation with Temperature VTH, Normalized Gate-Source Threshold Voltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 ID=250A TJ, Junction Temperature( C) Figure 6. Body Diode Forward Voltage Variation with Source Current -IS, Source-drain current (A) VGS=0V 1 VDS=VGS 10 10 0 10 -25 0 25 50 75 100 125 150 -1 0.2 0.4 0.6 0.8 1.0 1.2 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) |
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