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| BV45 NPN Silicon Epitaxial Planar Transistor High voltage fast switching power transistor Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current Total Dissipation Operating Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg TO-92 Plastic Package Weight approx. 0.19g Value 700 400 9 0.75 1.5 0.4 0.75 0.95 150 - 65 to + 150 Unit V V V A A A A W O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 0.2 A at VCE = 5 V, IC = 0.4 A Collector Cutoff Current at VCB = 700 V Emitter Cutoff Current at VEB = 9 V Collector Emitter Breakdown Voltage at IC = 1 mA Collector Emitter Saturation Voltage at IC = 0.2 A, IB = 40 mA at IC = 0.3 A, IB = 75 mA at IC = 0.4 A, IB = 135 mA Base Emitter Saturation Voltage at IC = 0.2 A, IB = 40 mA at IC = 0.3 A, IB = 75 mA Symbol hFE hFE ICBO IEBO V(BR)CEO Min. 10 5 400 Max. 30 20 250 1 Unit A mA V VCEsat - 0.5 1 1.5 1 1.2 V VBEsat V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 16/09/2006 BV45 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 16/09/2006 |
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