Part Number Hot Search : 
281SP D74LVC EE2225 HCS161K 1C101 2SA188 1N4737A MHF20SGS
Product Description
Full Text Search
 

To Download CHA3693-QDG Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 CHA3693-QDG
RoHS COMPLIANT
20-30GHz Medium Power Amplifier
GaAs Monolithic Microwave IC in SMD package Description
The CHA3693-QDG is a high gain broadband four stage monolithic medium power amplifier. It is designed for a wide range of applications from military to commercial communication systems. The circuit is manufactured with a PM-HEMT process: 0.15m gate length. It is supppplied in RoHS compliant SMD package.
CHA3693-QDG on a Board
Main Features
Broadband performance 20-30GHz 20dBm output power 20dB gain 330mA Low DC power consumption 28dBm 3rd order intercept point Output power level detector 24L-QFN4x4 SMD package
30,00 25,00 20,00 Gain & Rloss (dB) 15,00 10,00 5,00 0,00 -5,00 -10,00 -15,00 -20,00 15,00
Typical measurements Gain & Rloss (dB)
Gain dBS22 dBS11
20,00
25,00
30,00
35,00
40,00
frequency ( GHz)
Main Characteristics
Tamb = +25 Vd= +3,5V Id=330mA C, Symbol Fop G IP3 Id Parameter Operating Frequency range Smal signal Gain 3rd order intercept point (Pin/tone=-10dBm) Bias current Min 20 18 26.5 20 27.5 330 400 Typ Max 30 Unit GHz dB dBm mA
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA3693-QDG7268 - 25 Sep 07
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA3693-QDG
Electrical Characteristics*
20-30GHz Medium Power Amplifier
Tamb = +25 Vd= +3,5V Id=330mA C, Symbol Fop G G Is S11 S22 IP3 P1dB NF Vd Id Parameter Operating frequency range Gain Gain flatness Reverse isolation Input return loss Output return loss 3rd order intercept point (Pin/tone=-10dBm) Output power at 1dB gain compression Noise Figure Drain bias voltage (Lead D & D1) Drain bias current (small signal) 26.5 17 Min 20 20 21 1.5 50 -7 -4 27.5 18 8 3.5 330 400 10 -5 -3 2 Typ Max 25 Unit GHz dB dB dB dB dB dBm dBm dB V mA
Symbol Fop G G Is S11 S22 IP3 P1dB NF Vd Id
Parameter Operating frequency range Gain Gain flatness Reverse isolation Input return loss Output return loss 3rd order intercept point (Pin/tone=-10dBm) Output power at 1dB gain compression Noise Figure Drain bias voltage (Lead D & D1) Drain bias current
Min 25 18
Typ 20 1.5 45 -5 -4
Max 30
Unit GHz dB
2
dB dB
-3 -3
dB dB dBm dBm
26.5 17
27.5 18 8 3.5 330 400 10
dB V mA
*These values are representative of onboard measurements as defined on the drawing 95541 (see below). Performances can be optimized thanks to external matching (refer to the "Sub-band enhancement" section below).
Ref.: DSCHA3693-QDG7268 - 25 Sep 07
2/10
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
20-30GHz Medium Power Amplifier
Absolute Maximum Ratings (1)
Tamb = +25 C
CHA3693-QDG
Symbol Vd Ids Vgs Vds Pin
Parameter (1) Drain bias voltage Drain bias current_small signal Gate bias voltage Drain Gate voltage (vds-Vgs) Maximum continous input power Maximum peak input power overdrive
Values 4 470 -2 to +0.4 +5 +4 +15 175 -40 to +85 -55 to +125
Unit V mA V V dBm
Tj Ta Tstg
Junction temperature (2) Operating temperature range Storage temperature range
C C C
(1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Thermal Resistance channel to ground paddle= 82.4 C/W for Tamb. = +85 (Vd= 3.5V, C Id=330mA)
Ref. DSCHA3693-QDG7268 - 25 Sep 07
3/10
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA3693-QDG
20-30GHz Medium Power Amplifier
Typical Package Sij parameters
Tamb = +25 Vd= +3.5V Id=330mA (vg -0.3V) C,
F(GHz) 2 4 6 8 10 12 14 16 18 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
S11 dB -8,83 -8,83 -8,64 -7,72 -7,30 -6,49 -5,95 -5,95 -5,99 -6,36 -6,74 -6,27 -6,16 -6,34 -6,40 -5,93 -5,36 -4,98 -4,86 -4,36 -3,36 -2,64 -2,24 -1,89 -2,14 -2,36 -2,03 -2,62 -4,20 -5,39
S11 / -88,13 -0,68 91,54 -157,53 -68,95 37,98 143,74 -106,60 3,79 108,06 166,91 -139,16 -80,70 -23,12 36,28 96,58 153,39 -148,47 -86,47 -27,89 32,62 92,69 145,64 -155,52 -101,63 -44,96 14,77 69,17 121,07 -164,92
S12 dB -69,83 -73,27 -64,31 -55,69 -68,59 -63,63 -73,37 -52,40 -62,93 -55,89 -46,87 -51,98 -48,96 -46,99 -48,16 -43,73 -42,94 -44,76 -41,29 -41,52 -38,66 -41,19 -47,12 -47,97 -46,70 -42,01 -42,49 -40,73 -46,80 -50,85
S12 / -126,88 68,20 37,06 6,81 20,62 -32,07 100,59 93,68 -178,84 59,05 45,01 46,66 16,37 7,56 13,94 -4,41 -26,86 -35,38 -37,25 -61,53 -77,90 -158,77 164,10 121,51 -44,11 -104,03 -123,02 -160,86 -168,39 -73,02
S21 dB -40,54 -40,72 -34,09 -30,27 -22,09 2,12 15,68 22,74 23,87 22,93 22,66 21,92 21,92 21,31 20,87 20,66 20,13 19,78 19,78 19,32 18,76 18,17 18,29 17,46 16,98 16,39 15,72 14,25 11,71 9,73
S21 / 8,83 -39,81 -107,22 -166,33 -142,85 127,18 -16,16 -163,39 61,71 -47,72 -99,88 -145,39 169,12 124,36 81,78 37,50 -2,95 -45,91 -86,23 -129,26 -173,86 149,82 101,76 62,12 16,48 -29,52 -77,36 -128,68 179,68 131,26
S22 dB -0,11 -0,28 -0,34 -0,40 -1,42 -4,84 -9,02 -8,61 -5,02 -4,18 -3,86 -3,97 -3,79 -4,24 -4,09 -3,49 -3,24 -3,76 -4,50 -4,80 -4,09 -3,28 -4,01 -4,02 -4,72 -3,21 -2,78 -2,22 -1,61 -2,18
S22 / -36,92 -73,87 -111,83 -156,81 147,70 82,30 46,38 19,87 -25,84 -66,46 -87,22 -103,46 -116,84 -132,57 -141,94 -154,57 -168,83 177,81 167,74 163,72 156,85 145,38 136,30 125,27 127,84 120,85 113,07 103,43 89,83 72,52
Refer to the "definition of the Sij reference planes" section below.
Ref.: DSCHA3693-QDG7268 - 25 Sep 07
4/10
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
20-30GHz Medium Power Amplifier Typical PCB Measured Performance
Tamb = +25 Vd= +3.5V Id=330mA C,
CHA3693-QDG
Sij parameters
30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 15 20
S21
Gain & Rloss (dB)
S22
S11
25
30
35
40
Frequency ( GHz)
Gain and Rlosses in the package access planes, using the proposed land pattern & board 95541.
S21 Variation in Temperature
5 4 3 2 1 0 -1 -2 -3 -4 -5 20
temp -40deg.C/+25deg.C
DELTA GAIN
temp +25deg.C/+85deg.C
22
24
26
28
30
Frequency (GHz)
Ref. DSCHA3693-QDG7268 - 25 Sep 07
5/10
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA3693-QDG
CW Power Measurements
20-30GHz Medium Power Amplifier
Pout, Gain & Id versus Pin (Freq=20.5GHz)
26 24 22 20 18 16 14 12 10 8 6 4 2 0 -20 -15 -10 Pin(dBm) -5 0 5 600 500 Id(mA) 400 300 200 100 0
Pout(dbm)/Gain(dB)
POUT, Gain & Id versus Pin (F=25.5 GHz)
26 24 22 20 18 16 14 12 10 8 6 4 2 0 -20 -15 -10 Pin (dBm) -5 0 5 Pout(dBm)/Gain (dB) 600 500 Id(mA) 400 300 200 100 0
Pout , Gain & Id versus Pin ( F=29.5 GHz)
26 24 22 20 18 16 14 12 10 8 6 4 2 0 -20 -15 -10 Pin(dBm) -5 0 5 Pout(dBm) /Gain(dB) 600 500 Id(mA) 400 300 200 100 0
Ref.: DSCHA3693-QDG7268 - 25 Sep 07
6/10
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
20-30GHz Medium Power Amplifier
Package outline:
CHA3693-QDG
* **
**
* DR pad is provided for monitoring the output power. This access, when connected to an external resistor of 10kOhm (typical value) provides a DC voltage, which follows the output power level. ** D1pad corresponds to the 1st stage drain, D pad corresponds to the 2nd, 3rd, and 4st stage drains
Ref. DSCHA3693-QDG7268 - 25 Sep 07 7/10 Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA3693-QDG
20-30GHz Medium Power Amplifier
The RF ports are DC blocked on chip. The DC connections do not include any decoupling capacitor in package, therefore it is mandatory to provide a good external DC decoupling on the PC board, as close as possible to the package.
SMD mounting procedure
The SMD leadless package has been designed for high volume surface mount PCB assembly process. The dimensions and footprint required for the PCB (motherboard) are given in the drawings above. For the mounting process standard techniques involving solder paste and a suitable reflow process can be used. For further details, see application note AN0017.
Definition of the Sij reference planes
The reference planes are defined from the footprint of the recommended characterization board 95541 shown below. The reference is the symmetrical axis of the package. The input and output reference planes are located at 3.18mm offset (input wise and output wise respec.) from this axis. Then, the given Sij incorporates this land pattern.
3.1 8
3.1 8
Unit : mm
Ref.: DSCHA3693-QDG7268 - 25 Sep 07
8/10
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
20-30GHz Medium Power Amplifier
CHA3693-QDG
Proposed Assembly board "95541" for the 24L-QFN4x4 products characterization.
Compatible with the proposed footprint. Based on typically Ro4003 / 8mils or equivalent. Using a microstrip to coplanar transition to access the package. Recommended for the implementation of this product on a module board.
-
Ref.: DSCHA3693-QDG7268 - 25 Sep 07
9/10
Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA3693-QDG
20-30GHz Medium Power Amplifier
Sub-band enhancement
Based on the Sij matrix given previously, the performances of this product can be enhanced in sub-bands using external matching components such as very simple combination of microstrip stubs. For some sub-bands, matching networks have been implemented and some typical results are shown below. The following graphs show S parameters obtained thanks to external matching networks.
Typical S parameters with matching networks for the 21.2-23.6 GHz band
30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 20
S21 S22
Sij(dB)
S11
21
22
23
24
25
Frequency (GHz)
Typical S parameters with matching networks for the 24.5-26.5 GHz band
30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 22
S21 S22 S11
Sij(dB)
22,5
23
23,5
24
24,5
25
25,5
26
26,5
Frequency (GHz)
Ordering Information
QFN 4x4 RoHS compliant package:
Stick: XY = 20 CHA3693-QDG/XY Tape & reel: XY = 21
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref.: DSCHA3693-QDG7268 - 25 Sep 07 10/10 Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09


▲Up To Search▲   

 
Price & Availability of CHA3693-QDG

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X